Korea Institute of Science and Technology

Eunpyo Park

Jaewook Kim

InHo Kim

Jong-Keuk Park

Suyoun Lee

Joon Young Kwak

Yeonjoo Jeong

Jongkil Park

A flash memory device is provided. The flash memory device is disposed on a substrate, a channel layer made of a two-dimensional material, sources and drains disposed at both ends of the channel layer, a tunneling insulating layer having a first dielectric constant and a tunneling insulating layer disposed on the channel layer, a floating gate made of a two-dimensional material, a blocking insulating layer disposed on the floating gate and having a second dielectric constant greater than the first dielectric constant, and an upper gate disposed on the blocking insulating layer.

Flash memory device used in neuromorphic computing system

Growing community of inventors

Seoul, South Korea

Eunpyo Park