Samsung Electronics Co., Ltd.

Eunkak Kim

Youngmin Lee

Changjun Lee

Jeongmin Seo

A memory device, an electronic device, and a method of operating the memory device are provided. The memory device includes: a volatile memory including a plurality of memory cells, a plurality of word lines and a plurality of bit lines, and configured to provide output data stored in target memory cells, among the plurality of memory cells, based on a first read command and an address received from a host; a recovery logic circuit configured to provide hint data indicating first bit lines to which defective cells are connected, and second bit lines to which normal cells are connected, among the plurality of bit lines; and an Error Correction Circuit (ECC) configured to generate corrected data by correcting an error in the output data based on the output data and the hint data, and to provide the corrected data to the host.

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Seoul, South Korea

Eunkak Kim