Samsung Electronics Co., Ltd.

Lg Electronics Inc.

Seoul National University

Kanaph Therapeutics Inc.

Cj Cheiljedang Corporation

Eunji Kim

Sungdong Cho

ByungKyu Kim

Seungwoo Paek

Kwangwuk Park

Hakseung Lee

Youngbum Woo

Daesuk Lee

Jung Hak Nam

Jihyun Kim

Youngmin Lee

Dae Young Kim

Sangjun Park

Jiwon Kim

Uidam Jung

Kwangjin Moon

Jinnam Kim

Ji Hyun Lee

Youngjoo Cho

Boyoung Lee

Taeseong Kim

Bina Kim

Sung Kwang Son

Dongsu Kim

Lan Huh

Nara Kwon

Hyoungyol Mun

Dohyun Park

Sungroh Yoon

Jaehong Lee

Hyun-jung Bae

Hyeryun Yoo

Kangwoo Lee

Mijung Lee

Jieun Min

Seokhwan Jeong

Jihak Yu

Seil Oh

Yongyeop Kim

Heeseung Kim

Sang Kyun Lim

Koanmo Kim

Jinhwan Kim

Miyeon Kim

Eu Ddeum Chung

Sungpil Choi

Kyeongjin Yoon

Dahye Jeon

Jakyung Yoo

Kyungik Lee

Soyeon Jang

Sangik Bang

A semiconductor chip structure includes a first semiconductor chip that includes a first chip region and a first scribe lane region and a second semiconductor chip that includes a second chip region and a second scribe lane region respectively bonded to the first chip region and the first scribe lane region. The first semiconductor chip includes a first bonding wiring layer that includes a first bonding insulating layer and a first bonding electrode in the first bonding insulating layer. The second semiconductor chip includes a second bonding wiring layer that includes a second bonding insulating layer and a second bonding electrode in the second bonding insulating layer and a polishing stop pattern. The first bonding insulating layer and the first bonding electrode of the first bonding wiring layer are respectively hybrid bonded to the second bonding insulating layer and the second bonding electrode of the second bonding wiring layer.

Semiconductor chip structure

A semiconductor device includes an insulating structure; a plurality of horizontal layers vertically stacked and spaced apart from each other in the insulating structure; a conductive material pattern contacting the insulating structure; and a vertical structure penetrating through the plurality of horizontal layers and extending into the conductive material pattern in the insulating structure. Each of the plurality of horizontal layers comprises a conductive material, the vertical structure comprises a vertical portion and a protruding portion, the vertical portion of the vertical structure penetrates through the plurality of horizontal layers, the protruding portion of the vertical structure extends from the vertical portion into the conductive material pattern, a width of the vertical portion is greater than a width of the protruding portion, and a side surface of the protruding portion is in contact with the conductive material pattern.

Semiconductor device

A method of transmitting video content by using an edge computing service (e.g., a multi-access edge computing (MEC) service) is provided. The method includes obtaining sensor information including orientation information and pupil position information from an electronic device connected to the edge data network, obtaining a first partial image including a user field-of-view image and an extra field-of-view image, the user field-of-view image corresponding to the orientation information, and the extra field-of-view image corresponding to the pupil position information, generating a first frame by encoding the first partial image, and transmitting the generated first frame to the electronic device.

Method and device for transmitting video content by using edge computing service

The present invention relates to an inhibitor of SHP2, a pharmaceutical composition for preventing or treating a disease related to SHP2 comprising the same, a method for treating and preventing a disease using the same, and a use thereof. Accordingly, the present invention can effectively prevent or treat diseases related to SHP2.

SHP2 inhibitor and use thereof

A device including a first structure and a second structure is provided. The device includes a substrate, a peripheral circuit and first junction pads on the substrate; a first insulating structure surrounding side surfaces of the first junction pads; second junction pads contacting the first junction pads; a second insulating structure on the first insulating structure; a passivation layer on the second insulating structure; an upper insulating structure between the passivation layer and the second insulating structure; a barrier capping layer between the upper insulating structure and the passivation layer; conductive patterns spaced apart from each other in the upper insulating structure; a first pattern structure between the upper insulating structure and the second insulating structure; a stack structure between the second insulating structure and the first pattern structure, and including gate layers; and a vertical structure passing through the stack structure and including a data storage structure and a channel layer.

Device including first structure having peripheral circuit and second structure having gate layers

A computing device trains a position optimization model for determining, from among a plurality of positions, one or more optimal positions on a face based on a training data set including facial skin strain data at the plurality of positions. The computing device trains a speech classification model for classifying a voice from the facial skin strain data based on the training data at the one or more optimal positions determined by the position optimization model among the training data set.

Speech recognition using facial skin strain data

A semiconductor device includes a semiconductor substrate having an active surface on which semiconductor elements are provided. An interlayer insulating film is provided on the semiconductor substrate. A first via structure passes through the semiconductor substrate. The first via structure has a first diameter. A second via structure passes through the semiconductor substrate. The second via structure has a second diameter that is greater than the first diameter. The first via structure has a step portion that is in contact with the interlayer insulating film.

Semiconductor device including via structures with undercut portions and semiconductor package including the same

A signal receiver and an electronic apparatus including the same are disclosed. A signal receiver according to an embodiment of the present disclosure includes a first input interface to output a first type signal, second to fourth input interfaces to output the first type signal or the second type signal, a first buffer electrically connected to the first and the second input interfaces, a second buffer electrically connected to the second and the third input interfaces, a third buffer electrically connected to the third and the fourth input interfaces, and a fourth buffer electrically connected to the fourth and the second input interfaces. Accordingly, it is possible to simply implement a circuit for receiving a plurality of types of signals.

Signal receiver and electronic apparatus including the same

A through-silicon via (TSV) key for overlay measurement includes: a first TSV extending through at least a portion of a substrate in a first direction that is perpendicular to a top surface of the substrate; and at least one ring pattern, which is apart from and surrounds the first TSV in a second direction that is parallel to the top surface of the substrate, the at least one ring pattern being arranged in a layer that is lower than a top surface of the first TSV in the first direction, wherein an inner measurement point corresponds to the first TSV, an outer measurement point corresponds to the at least one ring pattern, and the inner measurement point and the outer measurement point are arranged to provide an overlay measurement of a TSV.

Through-silicon via (TSV) key for overlay measurement, and semiconductor device and semiconductor package including TSV key

A semiconductor includes a substrate having a first surface and a second surface opposite to each other, the substrate having a via hole extending in a thickness direction from the first surface, a circuit pattern in the first surface of the substrate, a through electrode structure in the via hole, a device isolation structure in a first trench extending in one direction in the first surface of the substrate, the device isolation structure between the via hole and the circuit pattern, the device isolation structure including a first oxide layer pattern and a first nitride layer pattern sequentially stacked on an inner surface of the first trench, the first nitride layer pattern filling the first trench, and an insulation interlayer on the first surface of the substrate and covering the circuit pattern.

Through via electrode and device isolation structure including oxide layer pattern and nitride layer pattern sequentially stacked on inner surface of trench

An example method, performed by an edge data network, of transmitting video content includes: obtaining first bearing information from an electronic device connected to the edge data network; determining second predicted bearing information based on the first bearing information; determining a second predicted partial image corresponding to the second predicted bearing information; transmitting, to the electronic device, a second predicted frame generated by encoding the second predicted partial image; obtaining, from the electronic device, second bearing information corresponding to a second partial image; comparing the second predicted bearing information to the obtained second bearing information; generating, based on a result of the comparing, a compensation frame using at least two of a first partial image corresponding to the first bearing information, the second predicted partial image, or the second partial image corresponding to the second bearing information; and transmitting the generated compensation frame to the electronic device based on the result of the comparing.

Method and apparatus for transmitting video content using edge computing service

Semiconductor device including via structure with head and body portions

An electronic device and method are disclosed herein. The electronic device includes a display and processor. The processor implements the method including executing an application, and based on detecting a frame drop, identifying an insertion position of an interpolation image for a plurality of images generated by execution of the application. An interpolation image is generated based on the identified insertion position and the interpolation image is inserted into the plurality of images at the identified insertion position.

Electronic device for improving graphic performance of application program and operating method thereof

A semiconductor device includes a semiconductor substrate including at least one semiconductor structure, an interlayer insulating layer disposed on the semiconductor substrate, at least one first via structure penetrating the semiconductor substrate and the interlayer insulating layer, including a first region having a first width at an upper surface of the interlayer insulating layer and a second region extending from the first region and having a second width at a lower surface of the semiconductor substrate, wherein a side surface of the first region and a side surface of the second region have different profiles at a boundary between the first region and the second region, and at least one second via structure penetrating the semiconductor substrate and the interlayer insulating layer and having a third width greater than the first width at an upper surface of the interlayer insulating layer.

Semiconductor device and semiconductor package

Growing community of inventors

Seoul, South Korea

Eunji Kim