Lg Electronics Inc.

Eunhye Youn

Seunghwan Shim

Sangwook Park

Ilhyoung Jung

Indo Chung

Younghyun Lee

Kisu Kim

Yujin Lee

Yuju Hwang

A solar cell and a method for manufacturing the same are disclosed. The solar cell includes a semiconductor substrate doped with impurities of a first conductive type, a front surface field region disposed at a front surface of the substrate and doped with impurities of the first conductive type at a concentration higher than those of the substrate, a tunnel layer disposed on a back surface of the substrate and formed of a dielectric material, an emitter region disposed at a first portion of a back surface of the tunnel layer and doped with impurities of a second conductive type opposite the first conductive type, and a back surface field region disposed at a second portion of the back surface of the tunnel layer and doped with impurities of the first conductive type at a concentration higher than those of the substrate.

Solar cell and method for manufacturing the same

A solar cell includes a semiconductor substrate of a first conductive type, an emitter region having a second conductive type different from the first conductive type and positioned at a first surface of the semiconductor substrate, a semiconductor region positioned directly on a second surface opposite the first surface of the semiconductor substrate, forming a charge accumulation layer on the second surface of the semiconductor substrate, and containing impurities of the first conductive type, a first electrode positioned on the first surface of the semiconductor substrate and coupled to the emitter region, and a second electrode positioned on the second surface of the semiconductor substrate and coupled to the semiconductor substrate.

Solar cell

A solar cell and a method for manufacturing the same are discussed. The solar cell includes a substrate containing impurities of a first conductive type, an emitter region which is positioned at a front surface of the substrate and contains impurities of a second conductive type opposite the first conductive type, a back passivation layer which is positioned on a back surface of the substrate and has openings, a back surface field region containing impurities of the first conductive type, a first electrode connected to the emitter region, and a second electrode connected to the back surface field region. The back surface field region includes a first back surface field region positioned on the back passivation layer and a second back surface field region, which is positioned at the back surface of the substrate exposed by the openings of the back passivation layer.

Growing community of inventors

Seoul, South Korea

Eunhye Youn