Samsung Electronics Co., Ltd.

Eunhye Oh

Taewook Park

Yongki Lee

Jinwoo Park

Michael Choi

Yong Ki Lee

Jaehyeok Kim

Youngjae Cho

Jisu Kang

Sungno Lee

Younghyo Park

Heejune Lee

Gapkyoung Kim

Jaechul Park

Jaeshin Lee

Hyochul Shin

A memory device includes a memory module and a BIST logic circuit. The BIST logic circuit includes; a pattern generator configured to generate first main data including a first portion, an error correction code (ECC) encoder configured to generate first parity data based on the first main data, and a parity control circuit configured to generate mask data based on the first parity data and the first main data, and generate first substituted parity data based on the mask data and the first parity data, wherein a pattern of the first substituted parity data is the same as a pattern of the first portion of the first main data.

Built-in-self-test logic, memory device with same, and memory module testing method

An operation method of a memory device includes programming a test pattern in a normal area, obtaining locations of error bits with respect to the test pattern and an error count for each error bit location, and repairing faulty cells included in the normal area with redundancy cells in a redundancy area based on the locations of the error bits and the error counts.

Operating and testing semiconductor devices

Provided is a storage device including a memory device configured to store original data; and a controller configured to control the memory device, the controller including a first error correction circuit configured to correct an error of the original data, and a second error correction circuit configured to correct an error of the original data, a maximum number of correctable error bits of the second error correction circuit being greater than a maximum number of correctable error bits of the first error correction circuit, a mapping memory configured to store at least some of parity bits generated by the second error correction circuit and store an address of the memory device at which the original data is stored; and a control block configured to control the first error correction circuit, the second error correction circuit, and the mapping memory.

Storage device including mapping memory and method of operating the same

A semiconductor integrated circuit includes a digital-to-analog converter and a built-in self-test circuit. The digital-to-analog converter performs a normal conversion operation to generate an analog output signal by converting a digital input signal corresponding to an external digital signal that is provided from an external device outside the semiconductor integrated circuit and provide the analog output signal to the external device. The built-in self-test circuit, while the digital-to-analog converter performs the normal conversion operation, performs a real-time monitoring operation to generate a comparison alarm signal based on the digital input signal and the analog output signal such that the comparison alarm signal indicates whether the digital-to-analog converter operates normally. Performance and reliability of the digital-to-analog converter and the semiconductor integrated circuit including the digital-to-analog converter may be enhanced by monitoring in real-time abnormality of the digital-to-analog converter using the on-time monitor.

Built-in self-test circuits and semiconductor integrated circuits including the same

A device for writing data to a memory, the device including: a first write buffer having a first data width that matches a width of write data included in a write request and wherein the first write buffer is configured to store the write data as first data; a second write buffer having a second data width that matches a data width of the memory and is greater than the first data width; and a controller configured to, based on a write address included in the write request and an address of the second data stored in the second write buffer, write the first data stored in the first write buffer to the second write buffer and write the second data stored in the second write buffer to the memory.

Apparatus and method for writing data in a memory

A test method is provided to test a semiconductor integrated circuit including an analog-to-digital converter and/or a digital-to-analog converter. An analog test signal having a test pattern is generated using an analog test signal generator or a digital test signal having the test pattern using a digital test signal generator. An analog output signal corresponding to the test pattern is generated by applying, as a digital input signal, the digital test signal having the test pattern to a digital-to-analog converter responsive to generation of the digital test signal. A digital output signal corresponding to the test pattern is generated by applying, as an analog input signal, the analog test signal having the test pattern or the analog output signal corresponding to the test pattern to an analog-to-digital converter. A normality of the semiconductor integrated circuit is determined based on the digital output signal corresponding to the test pattern.

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Yongin-si, South Korea

Eunhye Oh