Samsung Electronics Co., Ltd.

Eunhee Jeang

Seongkeun Cho

Jihun Lee

Hyunjae Kang

Ingi Kim

Jeonggil Kim

Taemin Earmme

Minhwan Seo

Sangwoo Bae

Gyumin Jeong

Sangmin Lee

Taehyun Kim

Yongseok Lee

Minseok Choi

Jongwoo Sun

Jungchul Lee

Hyungjoo Lee

Seulgi Lee

Jeongil Mun

Akinori Okubo

Wondon Joo

Jongbin Park

Kyeonghun Kim

Yoojin Jeong

Incheol Song

Taekyoon Park

Seeyub Yang

Kyungrim Kim

Dohyun Jung

Yoonsang Lee

Teun Boeren

Donghyeong Kim

Kyungbin Park

Jangwon Cho

Matsuda Yozo

Boris Afinogenov

Maksim Riabko

Anton Medvedev

Aleksandr Shorokhov

Anton Sofronov

An extreme ultraviolet (EUV) collector inspection apparatus includes a light blocking cover covering a front surface of an EUV collector to be inspected and providing a space portion in which external light is blocked, a light source in the space portion, the light source having a pillar shape extending along a central axis of the EUV collector, the light source configured to output irradiated light ranging from an ultraviolet (UV) band to a visible light (VIS) band, and a spectrometer above the light source and configured to detect a spectrum of reflected light from the irradiated light reflected from the front surface of the EUV collector. The apparatus or a controller associated therewith may be configured to inspect a contamination state of the front surface of the EUV collector based on the spectrum of reflected light.

EUV collector inspection apparatus and inspection method

An illumination correction apparatus for correcting a radiation beam incident on a reticle from an exposure apparatus includes a plurality of fingers each having a surface facing an incident direction of the radiation beam, the plurality of fingers being arranged in a first direction to be adjacent to a path of the radiation beam, and configured to adjust an amount of the incident radiation beam by moving in a second direction, intersecting the first direction, a controller connected to the plurality of fingers and configured to control movement of the plurality of fingers such that an intensity of the radiation beam has uniformity in the first direction, at least one optical sensor on the surface of at least one finger of the plurality of fingers, and a measurement unit configured to measure, based on an output of the at least one optical sensor, the intensity of the radiation beam.

Illumination correction apparatus

A method of fabricating a semiconductor device is disclosed. The method may include forming a parent pattern, forming an upper thin film on the parent pattern, forming a child pattern on the upper thin film, measuring a diffraction light from the parent and child patterns to obtain an intensity difference curve of the diffraction light versus its wavelength, and performing an overlay measurement process on the parent and child patterns using the diffraction light, which has the same wavelength as a peak of the intensity difference curve located near a peak of reflectance of the parent and child patterns, to obtain an overlay measurement value.

Method of fabricating a semiconductor device

A wafer processing apparatus includes a chamber body including a cavity region and a process region; a microwave waveguide configured to introduce a microwave into the cavity region; a first microwave window between the cavity region and the process region; and a magnetic field supplying device configured to apply a magnetic field inside the chamber body, wherein a thickness of the first microwave window is constant, and the first microwave window is configured to control a beam cross-section of the microwave in the process region.

Wafer processing apparatus

Provided is a polarization measuring device including a stage on which a measurement target is provided, a light source assembly configured to emit incident light, a first polarimeter configured to polarize the incident light, a second polarimeter configured to polarize reflected light reflected from the measurement target that is irradiated by the incident light, a filter assembly configured to remove noise from the reflected light, and a detector configured to receive the reflected light and measure an intensity of the reflected light and a phase of the reflected light.

Polarization measuring device and method of fabricating semiconductor device using the same

A substrate inspection apparatus includes a light source unit, a pulsed beam matching unit, a substrate support unit, an incidence angle adjusting unit, and a detecting unit. The light source unit emits a first laser beam having a first wavelength and a second laser beam having a second wavelength. The pulsed beam matching unit matches the first laser beam and the second laser beam to superimpose a pulse of the first laser beam on a pulse of the second laser beam in time and space. The substrate support unit supports a substrate to be inspected. The incidence angle adjusting unit adjusts angles of incidence of the matched first laser beam and second laser beams to irradiate the first laser beam and the second laser beam on the substrate, and mixes the first laser beam and the second laser beam to generate an evanescent wave on the substrate. The evanescent wave generates scattered light due to a defect of the substrate. The detecting unit detects the scattered light generated due to the defect of the substrate.

Substrate inspection system and method of manufacturing semiconductor device using substrate inspection system

A method of forming a plasma processing apparatus comprises providing a chamber, the chamber including a wall defining an interior, and a viewport extending through the wall. An analysis apparatus connected to the viewport may be formed. The analysis apparatus includes an analyzer adjacent to the chamber, a probe connected to the analyzer and aligned with the viewport, and a first window aligned with the probe, the first window having a first surface, and a second surface at an opposite side relative to the first surface, the second surface being exposed to the interior of the chamber, and the second surface of the first window has a scattering surface.

Method of forming plasma processing apparatus, related apparatus, and method of forming semiconductor device using the same

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Paju-si, South Korea

Eunhee Jeang