Samsung Electronics Co., Ltd.

Sungkyunkwan University

Hl Mando Corporation

Eunha Lee

Hyangsook Lee

Junghwa Kim

Jinseong Heo

Sanghyun Jo

Jooho Lee

Jeonggyu Song

Taehwan Moon

Myoungho Jeong

Seunggeol Nam

Sungsoo Han

Heechul Jung

Seongho Jeon

Youngsuk Jung

Boksoon Kwon

Young-Hoon Kim

Young-Min Kim

Yunseong Lee

Haeryong Kim

Younsoo Kim

Eunae Cho

Hagyoul Bae

Boeun Park

Dukhyun Choe

Hyoungsub Kim

Yong-hee Cho

Wonsik Ahn

Sungnim Jo

Sang-Hyeok Yang

An electronic device includes: a substrate including a source, a drain, and a channel between the source and the drain; a gate electrode arranged above the substrate and facing the channel, the gate electrode being apart from the channel in a first direction; and a ferroelectric thin film structure between the channel and the gate electrode, the ferroelectric thin film structure including a first ferroelectric layer, a crystallization barrier layer including a dielectric material, and a second ferroelectric layer, which are sequentially arranged from the channel in the first direction. The average of sizes of crystal grains of the first ferroelectric layer may be less than or equal to the average of sizes of crystal grains of the second ferroelectric layer, and owing to small crystal grains, dispersion of performance may be improved.

Electronic device including ferroelectric thin film structure

A method for two-dimensional mapping of crystal information of a polycrystalline material may include acquiring a diffraction pattern acquired by scanning an electron beam to a polycrystalline material, generating a plurality of clusters by applying a clustering algorithm to the acquired diffraction pattern based on unsupervised learning, acquiring crystal information of the polycrystalline material by applying a parallel deep convolutional neural network (DCNN) algorithm to each of the plurality of generated clusters based on supervised learning, and generating a two-dimensional image in which the acquired crystal information is mapped.

Automated mapping method of crystalline structure and orientation of polycrystalline material with deep learning

Disclosed herein is a braking system including a hydraulic braking device configured to supply a hydraulic pressure to front and rear wheels of a vehicle to perform braking of the vehicle and a controller configured to control the hydraulic braking device to compensate for a coast regeneration torque reduction amount, which is applied to a driving motor driving the rear wheels, using a hydraulic braking amount based on a slip rate of the rear wheel being greater than or equal to a preset threshold value during a regenerative braking by the driving motor.

Braking system for vehicle and control method thereof

A thin film structure includes a substrate; and a material layer having a fluorite structure, the material layer on the substrate and comprising crystals of which <112> crystal orientation is aligned in a normal direction of the substrate. The material layer may have ferroelectricity. The material layer may include the crystals of which the <112> crystal orientation is aligned in the normal direction of the substrate among all crystals of the material layer in a dominant ratio.

Thin film structure and semiconductor device comprising the same

Provided are a method of growing a two-dimensional transition metal chalcogenide (TMC) film and a method of manufacturing a device including the two-dimensional TMC film. The method of growing a two-dimensional TMC film includes placing a metal layer having a predetermined pattern on a surface of a substrate; separately supplying a chalcogen precursor to a reaction chamber provided with the substrate; supplying a transition metal precursor to the reaction chamber; and evacuating the chalcogen precursor, the transition metal precursor, and by-products generated therefrom from the reaction chamber, wherein an amount of the chalcogen precursor and an amount of the transition metal precursor supplied to the reaction chamber may be controlled.

Method of growing two-dimensional transition metal chalcogenide film and method of manufacturing device including the same

A semiconductor device includes a lower electrode; an upper electrode disposed to be spaced apart from the lower electrode; and a dielectric layer disposed between the lower electrode and the upper electrode, and including a first metal oxide region, a second metal oxide region, and a third metal oxide region.

Semiconductor device and semiconductor apparatus including the same

Provided are dielectric thin-film structures and electronic devices including the same. The dielectric thin-film structure includes a substrate, and a dielectric layer provided on the substrate. The dielectric layer including a tetragonal crystal structure, and crystal grains including a proportion of the crystal grains preferentially oriented such that at least one of a <hk0>, <h00>, or <0k0> direction of a crystal lattice is parallel to or forms an angle of less than 45 degrees an out-of-plane orientation.

Dielectric thin-film structure and electronic device including the same

Provided are an electronic device including a dielectric layer having an adjusted crystal orientation and a method of manufacturing the electronic device. The electronic device includes a seed layer provided on a substrate and a dielectric layer provided on the seed layer. The seed layer includes crystal grains having aligned crystal orientations. The dielectric layer includes crystal grains having crystal orientations aligned in the same direction as the crystal orientations of the seed layer.

Electronic device and method of manufacturing the same

An electronic device includes a dielectric layer including crystal grains having aligned crystal orientations the dielectric layer may be between a substrate and a gate electrode. The dielectric layer may be between isolated first and second electrodes. A method of manufacturing an electronic device may include preparing a substrate having a channel layer, forming the dielectric layer on the channel layer, and forming a gate electrode on the dielectric layer.

Electronic devices and methods of manufacturing the same

Provided are dielectric thin-film structures and electronic devices including the same. The dielectric thin-film structure includes a substrate, and a dielectric layer provided on the substrate. The dielectric layer including a tetragonal crystal structure, and crystal grains including a proportion of the crystal grains preferentially oriented such that at least one of a &#x3c;hk0&#x3e;, &#x3c;h00&#x3e;, or &#x3c;0k0&#x3e; direction of a crystal lattice is parallel to or forms an angle of less than 45 degrees an out-of-plane orientation.

An apparatus for measuring a deformation stiffness of an article includes a force measuring means configured to measure a force generated in a thickness direction of the article; a thickness measuring means configured to measure a thickness of the article; and a data processor configured to differentiate force with respect to thickness to calculate the deformation stiffness of the article, wherein each of the force and the thickness are a result of a volume change of the article.

Apparatus and method for measuring deformation stiffness of a secondary battery

Battery housing structures and battery apparatuses including the same are provided. A battery housing structure may include a case including an accommodation region in which a battery unit is accommodated, and an elastic member assembly provided in the case and configured to apply a pressure to the battery unit accommodated in the accommodation region. The elastic member assembly may include at least one first elastic member having an elastic coefficient that increases when a displacement increases and at least one second elastic member having an elastic coefficient that decreases when a displacement increases. The at least one first elastic member and the at least one second elastic member may have different structures or may be arranged in different directions.

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Seoul, South Korea

Eunha Lee