Wisconsin Alumni Research Foundation

Eungnak Han

Padma Gopalan

Myungwoong Kim

Daniel Patrick Sweat

Provided are novel polymer brushes that may be used in underlying buffer or imaging layers for block copolymer lithography. The novel polymer brushes include X-A-b-B and X-A-b-C block copolymer brushes, with X an anchoring group, the A block a lithographically sensitive polymer, and the C block a random copolymer. According to various embodiments, polymer block brushes for neutral and preferential layers are provided; the neutral layers non-preferential to the overlying block copolymer and the preferential layers preferential to a block of the overlying block copolymer. Also provided are novel methods of patterning polymer block brush layers as well as polymer block brush buffer and imaging layers that are directly patternable by e-beam, deep UV, extreme UV, X-ray or other lithographic methods.

Patternable polymer block brush layers

The present invention provides structures including a substrate, a crosslinked polymer film disposed over the substrate, and a patterned diblock copolymer film disposed over the crosslinked polymer film. The crosslinked polymer comprises a random copolymer polymerized from a first monomer, a second monomer, and a photo-crosslinkable and/or thermally crosslinkable third monomer, including epoxy-functional or acrylyol-functional monomers. Also disclosed are methods for forming the structures.

Photopatternable imaging layers for controlling block copolymer microdomain orientation

Surface-modifying layers, including neutral layers for vertical domain-forming block copolymers of styrene and methyl methacrylate are provided. Also provided are self-assembled block copolymer structures incorporating the surface modifying layers, methods of fabricating such structures and methods of using the structures in BCP lithography applications. The surface-modifying layers comprise a crosslinked copolymer film, wherein the crosslinked copolymers are random copolymers polymerized from styrene monomers and/or (meth)acrylate monomers and crosslinkable epoxy group-functionalized monomers. The crosslinked copolymer films are characterized by a high content of the crosslinkable epoxy group-functionalized monomer.

Crosslinked random copolymer films for block copolymer domain orientation

Block copolymer-based mask structures for the growth of patterned polymer brushes via surface-initiated atom transfer radical polymerization (SI-ATRP) are provided. Also provided are methods of making the mask structures and methods of using the mask structures to grow patterned polymer brushes. The mask structures comprise a substrate having a surface, a neutral layer comprising a crosslinked copolymer film disposed on the surface of the substrate and a domain-forming block copolymer film disposed on the crosslinked copolymer film. The crosslinked copolymer film comprises crosslinked random copolymer chains having pendant alkyl halide functional groups that are capable of acting as ATRP initiating sites.

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Hillsboro, OR, United States of America

Eungnak Han