Samsung Electronics Co., Ltd.

Eung Kyu Lee

Chang Keun Lee

Young Chan Kim

Young Gu Jin

Hisanori Ihara

Tae Sub Jung

Moo Sup Lim

Yong Hun Kwon

Sun Woo Park

Ho Woo Park

Sun Hyun Kim

An image sensor includes a semiconductor substrate including a plurality of pixel regions, a first surface, and a second surface opposing the first surface, a plurality of transistors adjacent to the first surface of the semiconductor substrate in each of the plurality of pixel regions, a microlens on the second surface of the semiconductor substrate, and a plurality of conductive patterns in contact with the semiconductor substrate and closer to the second surface of the semiconductor substrate than to the first surface of the semiconductor substrate in each of the plurality of pixel regions.

Image sensor and imaging device

A semiconductor device includes a lower insulating layer on a lower substrate, a lower pad structure inside the lower insulating layer, an upper insulating layer on the lower insulating layer, an upper pad structure inside the upper insulating layer, and an upper substrate on the upper insulating layer. A via plug passes through at least a portion of each of the upper substrate, the upper insulating layer, and the lower insulating layer, and in contact with the upper pad structure and the lower pad structure. The upper pad structure includes upper pad conductive layers and an upper connection layer between the upper pad conductive layers. The upper connection layer includes a conductive pattern having a shape different from a shape of at least one of the upper pad conductive layers. The via plug is in direct contact with the upper pad conductive layers and the upper connection layer.

Semiconductor device including via plug

Growing community of inventors

Hwaseong-si, South Korea

Eung Kyu Lee