Lg Electronics Inc.

Other

Mitsubishi Materials Corporation

Eung Chul Park

Bong Koo Kang

Sang Jin Yoon

Jung Gwan Han

Chang Hyun Kim

Hideaki Sakurai

Yoshirou Kuromitsu

Ginjiro Toyoguchi

Seung Ki Joo

Jeong Sik Choi

Jang Sik Lee

Jung Gwau Han

The present invention relates to a method and apparatus for driving a plasma display panel that can be driven at a low voltage and prevent undesired discharge from being generated under high temperature environment.

Method and apparatus for driving plasma display panel

The present invention relates to a plasma display panel, more particularly, to a plasma display panel apparatus and manufacturing method of the same, which is capable of minimizing a gap between a seal layer and a UV Ultra Violet ray / silicon desiccant layer due to an air bubble, when the front panel and the rear panel of the plasma display panel are in the sealing process. A plasma display panel according to the present invention includes a front substrate; a rear substrate; a seal layer which is formed between the front panel and the rear panel; and a desiccant layer which is in contact with the front panel, the rear panel and the seal layer.

Plasma display panel which is capable of minimizing a gap between a seal layer and a ultra violet ray/silicon desiccant layer and manufacturing method of the same

Disclosed are a plasma display panel and a method of manufacturing the same. The plasma display panel according to the present invention comprises a front panel comprising a protective layer and a rear panel disposed apart from the front panel by a predetermined distance. The protective layer comprising magnesium oxide (MgO) is doped with scandium (Sc) and calcium (Ca). The plasma display panel according to the present invention has the advantage of excellent temperature-dependent panel characteristic. The plasma display panel according to the present invention also has the further advantage of excellent voltage margin of the address voltage.

Plasma display panel and manufacturing method thereof

The present invention relates to a method and apparatus for driving a plasma display panel that can be driven at a low voltage and prevent undesired discharge from being generated under high temperature environment. A method and apparatus for driving a plasma display panel according to an embodiment of the present invention includes a first step of applying an initialization signal to the first and second electrodes to initialize cells, the initialization signal has at least one rising part where a voltage rises and at least one sustain part where the voltage is sustained; a second step of applying a scan signal to any one of the first and second electrodes, and data to the third electrode to select the cell; and a third step of alternately applying sustain signals to the first and second electrodes to carry out a display for the selected cell.

An improved protective film for a plasma display panel and a fabricating method thereof are provided. The improved protective film has magnesium oxide (MgO) as its main component, and uses a slight addition of silicon (Si) to improve jitter characteristics experienced during the address period.

Protective film of plasma display panel and method of fabricating the same

It is an object of the present invention to provide a polycrystalline MgO deposition material which is capable of obtaining a good discharge response characteristic over a wide temperature range. Additionally, it is another object of the present invention to provide a plasma display panel with an improved luminance and a material for the plasma display panel which can remarkably reduce the number of address ICs without lowering the panel luminance. In order to achieve the objects, there is provided an improvement of a polycrystalline MgO deposition material for a passivation layer of the plasma display panel. A characteristic structure is that the polycrystalline MgO deposition material is formed of a sintered pellet of polycrystalline MgO, of which MgO purity is more than 99.9% and relative density is more than 90%. Further, a Si concentration in the polycrystalline MgO is more than 30 ppm and less than 500 ppm.

Polycrystalline MgO deposition material having adjusted Si concentration

A method for fabricating a ferroelectric thin film, capable of preventing degradation due to fatigue and aging of a ferroelectric thin film of PZT and enabling crystallization at a low temperature. The ferroelectric thin film fabrication method includes the steps of forming an insulation layer on one side of a semiconductor substrate, forming an electrode layer on the insulation layer, forming a ferroelectric layer on the electrode layer, and performing an ion damage processing on the ferroelectric layer using an ionized gas.

Growing community of inventors

Kumi-shi, South Korea

Eung Chul Park