Samsung Electronics Co., Ltd.

Euncheol Do

Jaeman Choi

Moonseok Kwon

Chan Kwak

Yeonil Lee

Changsoo Lee

Kuntae Kwon

Hyungjun Kim

Jaejun Chang

Giyoung Jo

Kitae Park

Jinkyu Kang

Ryounghee Kim

Hyeokjo Gwon

Hyunchul Lee

Sangmin Ji

Yeonji Chung

Hyeoncheol Park

Soojin Park

Yoonhoi Lee

Byunghoon Na

Jooho Lee

Hyeon Cheol Park

Jinhong Kim

Yongsung Kim

Kiyoung Lee

Doh Won Jung

Junhwan Ku

Daejin Yang

Minsang Kim

Jonghwan Park

Changduk Kang

Chilhee Chung

Taewon Jeong

Yong-hee Cho

SangWoon Lee

Sunghaeng Lee

Nagjong Kim

Provided are a capacitor, an electronic device including the same, and a method of manufacturing the same, the capacitor including a first thin-film electrode layer; a second thin-film electrode layer; a dielectric layer between the first thin-film electrode layer and the second thin-film electrode layer; and an interlayer between the dielectric and at least one of the first thin-film electrode layer or the second thin-film electrode layer, the interlayer including a same crystal structure type as and a different composition from at least one of the first thin film electrode layer, the second thin film electrode layer, or the dielectric layer, the interlayer including at least one of a anionized layer or a neutral layer.

Capacitor, electronic device including the same, and method of manufacturing the same

A ternary paraelectric having a Cc structure and a method of manufacturing the same are provided. The ternary paraelectric having a Cc structure includes a material having a chemical formula of ABOthat has a monoclinic system, is a space group No. 9, and has a dielectric constant of 150 to 250, wherein 'A' is a Group 1 element, and “B” is a Group 5 element. “A” may include one of Na, K, Li and Rb. “B” may include one of Nb, V, and Ta. The ABOmaterial may be NaNbOin which bandgap energy thereof is greater than that of STO. The ABOmaterial may have relative density that is greater than 90% or more.

Ternary paraelectric material with space group Cc and method of manufacturing the same

A capacitor including a lower electrode; an upper electrode apart from the lower electrode; and a between the lower electrode and the upper electrode, the dielectric including a dielectric layer including TiO, and a leakage current reducing layer including GeOin the dielectric layer. Due to the leakage current reducing layer, a leakage current is effectively reduced while a decrease in the dielectric constant of the dielectric thin-film is small.

Capacitor and electronic device including the same

Provided herein is a lithium battery including: a cathode including a cathode active material; an anode including an anode active material; an electrolyte between the cathode and the anode; and a separator impregnated with the electrolyte, wherein the separator includes carboxyl group-containing microbial cellulose nanofibers, and wherein a differential scanning calorimetry (DSC) thermogram of the separator evinces an exothermic reaction peak, represented by a differential value (dH/dT), at a temperature in a range of about 150° C. to about 200° C.

Lithium battery

Provided are a dielectric thin film, an integrated device including the same, and a method of manufacturing the dielectric thin film. The dielectric thin film includes an oxide having a perovskite-type crystal structure represented by Formula 1 below and wherein the dielectric thin film comprises 0.3 at % or less of halogen ions or sulfur ions.ABO&#x2003;&#x2003;&#x3c;Formula 1&#x3e; In Formula 1, A, B, x, y, and z are disclosed in the specification.

Dielectric thin film, integrated device including the same, and method of manufacturing the dielectric thin film

Provided is a method of preparing a dielectric film having a nanoscale three-dimensional shape and including an oxide, the oxide represented by RMOwhere R is a divalent element and M is a pentavalent element, the method may include synthesizing a target material, the target material including the divalent element and the pentavalent element; and forming the oxide by depositing the divalent element and the pentavalent element, from the target material, onto a substrate such that the oxide includes a perovskite-type crystal structure, 1.3&#x3c;B/A&#x3c;1.7, and 9.0&#x2264;C&#x3c;10.0.

Dielectric thin film, capacitor including the dielectric thin film, and method for manufacturing the dielectric thin film

A complex electrode assembly includes a first sheet-type wiring which extends in a lengthwise direction of the first sheet-type wiring and comprises a sheet region of which a width that is perpendicular to the lengthwise direction is greater than a thickness that is perpendicular to the lengthwise direction and a width direction of the first sheet-type wiring, and electrode assemblies which are arranged separate from each other in the lengthwise direction of the first sheet-type wiring and are electrically connected to the first sheet-type wiring. The first sheet-type wiring may be disposed to face an outer surface of each of the electrode assemblies.

Complex electrode assembly including plurality of electrode assemblies and electrochemical device comprising the complex electrode assembly

An electrode assembly includes an electrode jelly-roll, which includes a winding including a first electrode plate, a second electrode plate, and a separator disposed between the first and second electrode plates; an outer surface parallel to a winding axis of the prismatic electrode jelly-roll, side surfaces perpendicular to the winding axis; a first electrode tab, which is electrically connected to the first electrode plate and extends in a winding axis direction of the prismatic electrode jelly-roll; a second electrode tab, which is electrically connected to the second electrode plate and extends in a winding axis direction of the electrode jelly-roll, wherein an end portion of at least one of the first electrode tab and the second electrode tab is bent in a direction opposite to the direction in which the corresponding electrode tab extends and faces an outer surface of the prismatic electrode jelly-roll.

Electrode assembly and secondary battery including the same

Provided herein is a lithium battery including: a cathode including a cathode active material; an anode including an anode active material; an electrolyte between the cathode and the anode; and a separator impregnated with the electrolyte, wherein the separator includes cellulose nanofibers, and wherein a differential scanning calorimetry (DSC) thermogram of the separator evinces an exothermic reaction peak, represented by a differential value (dH/dT), at a temperature in a range of about 150&#xb0; C. to about 200&#xb0; C.

Provided are a dielectric including an oxide represented by Formula 1 below and having a cubic crystal structure, a capacitor including the dielectric, a semiconductor device including the dielectric, and a method of manufacturing the dielectric.(RbA)(BTa)O&#x2003;&#x2003;&#x3c;Formula 1&#x3e; In Formula 1 above, A is K, Na, Li, Cs, or a combination thereof, B is Nb, V, or a combination thereof, and 0.1&#x2264;x&#x2264;0.2, 0&#x2264;y&#x2264;0.2, and 0&#x2264;&#x3b4;&#x2264;0.5 are satisfied.

Dielectric, capacitor including dielectric, semiconductor device including dielectric, and method of manufacturing dielectric

Provided herein are a porous film, a separator including the same, an electrochemical device including the separator, and a method of preparing the porous film. The porous film includes first cellulose nanofibers which is impregnated with a carbonate-based solvent-containing electrolyte solution and has a reaction heat of 150 J/g or less at a temperature ranging from about 30&#xb0; C. to about 300&#xb0; C., as measured by differential scanning calorimetry (DSC).

Porous film, separator including the same, electrochemical device including separator, and method of preparing porous film

Provided are a dielectric, a capacitor and a semiconductor device that include the dielectric, and a method of preparing the dielectric, the dielectric including: a composition represented by Formula 1; and an oxide including a perovskite type crystal structure having a polar space group or a non-polar space group other than a Pbnm space group:ABO&#x2003;&#x2003;&#x3c;Formula 1&#x3e;

Dielectric, capacitor and semiconductor device including the same, and method of preparing the dielectric

An exterior package for an electrode assembly of an electrochemical device includes a plurality of linear patterns. Each of the linear patterns has a cross-section of an uneven structure in a thickness direction of the electrode assembly and a linear pattern of the linear patterns includes a first element line and a second element line, which extend in different directions on a plane perpendicular to the thickness direction of the electrode assembly.

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Seoul, South Korea

Euncheol Do