Samsung Electronics Co., Ltd.

Eunae Chung

Suhwan Kim

Donghwan Kim

Toshiro Nakanishi

Taehyun An

Sungkweon Baek

Gabjin Nam

Jin Soak Kim

Yubin Kim

A static random access memory (SRAM) cell can include a first pull-up transistor, a first pull-down transistor, a second pull-up transistor, a second pull-down transistor, a first access transistor, and a second access transistor, all being coupled together in a 6 transistor SRAM cell, wherein each of the transistors is configured as a vertical channel transistor.

Static random access memory (SRAM) cells including vertical channel transistors and methods of forming the same

Static random access memory (SRAM) cells including vertical channel transistors

Growing community of inventors

Hwaseong-si, South Korea

Eunae Chung