Samsung Electronics Co., Ltd.

Sk Innovation Co., Ltd.

Eun-Young Kang

Jae-Seung Hwang

Jun Hyuk Seo

Sung-Un Kwon

Yong-Hwan Ryu

Sung-Il Cho

Jun Ho Seo

Yong-Hyun Kwon

Ju-Young Choi

Min-Seong Kim

The present invention provides a lithium secondary battery. In particular, the present invention provides an adhesive pad for a lithium secondary battery in which the adhesive pad including the substrate layer and the adhesive layer formed on at least one surface of the substrate layer is adhered to at least one surface of the exterior material through the adhesive layer, such that it is possible to reduce the danger of ignition or explosion by improving penetration safety when applying to the lithium secondary battery, and a lithium secondary battery including the same.

Lithium secondary battery

A method of fabricating a semiconductor device in which a plurality of conductive lines having a fine pitch and a uniform thickness can be formed is provided. The method includes forming a plurality of first conductive patterns in a insulation layer as closed curves, forming a plurality of mask patterns on the insulation layer, the mask patterns exposing end portions of each of the first conductive patterns, and forming a plurality of second conductive patterns in the insulation layer as lines by removing the end portions of each of the first conductive patterns.

Method of fabricating semiconductor device

A method of manufacturing a semiconductor device having buried gates may include forming a stacked structure of sequentially stacked first mask patterns and second mask patterns with equal widths to expose active regions and isolation regions of a semiconductor substrate. After forming reduced first mask patterns by decreasing the width only of the first mask patterns, trenches may be formed in the active regions and the isolation regions by etching the exposed portions of the semiconductor substrate using the second mask patterns as an etch mask. Then, gate insulating films may be formed on inner walls of the trenches in the active regions, and a conductive material may be buried into the trenches in the active regions and the isolation regions to form gates.

Method of manufacturing semiconductor device having buried gate

Growing community of inventors

Seoul, South Korea

Eun-Young Kang