Samsung Electronics Co., Ltd.

Korea Research Institute of Chemical Technology

Hynix Semiconductor Inc.

Eun-young Chung

Dong-Hack Suh

Tae-hyung Rhee

Kil-Yeong Choi

Young-Taik Hong

The present invention discloses a method for forming a semiconductor device which increases capacitance by forming a structure of a trench capacitor and uses an inner side face of the capacitor as a capacitor region.

Method for forming semiconductor device

A polyimide for optical communications has a monomer, represented by the formula (1), as a repeating unit: ##STR1## wherein X.sub.1 and X.sub.2 are independently selected from the group consisting of halogen atom, halogenated alkyl group, halogenated aromatic ring group, --NO.sub.2, --OR.sup.1 and --SR.sup.1 (where R.sup.1 is selected from the group consisting of halogenated alkyl and halogenated aromatic ring groups); and Z is selected from the group consisting of divalent halogenated aliphatic hydrocarbon, divalent halogenated aliphatic cyclic hydrocarbon and divalent halogenated aromatic hydrocarbon. Thus, light absorption loss at a near infrared light wavelength range can be minimized by using the polyimide, so that the polyimide is very useful as an optical material in the optical communications field using light of a near infrared light region.

Polyimide for optical communications and method for preparing the same

A bis(disubstitutedmaleimide) derivative and a polyetherimide for optical communications and the polyetherimide formed therefrom are described. The polyetherimde has a high refractive index, so that when using such polyetherimide as a material for a core of an optical fiber, the range of the materials that can be selected for the cladding becomes wide. Also, a coating property and adhesion to a substrate are improved, thereby providing a good film forming property and thermal stability. Also, because the polyetherimide can minimize optical loss at a near infrared wavelength range, the polyetherimide is very useful as an optical material in the optical communications field adopting the light of near infrared wavelength.

Bis(dialkylmaleimide) derivative and polyetherimide for optical

A polyamideimide for optical communications, having a minimum light absorption loss in a near infrared light wavelength range, high thermal stability and excellent film processibility, and a method for preparing the same are provided. The polyamideimide has a higher refractive index than the conventional fluorinated polyamideimide. Thus, when using such polyamideimide as a material for a core of an optical fiber, the selection range on the material for cladding becomes wide. Also the coating property and adhesiveness to a substrate are improved, thereby providing a good film processibility and heat resistance.

Polyamideimide for optical communications and method for preparing the

A polyarylether of the formula (VIII) ##STR1## wherein wherein Z' is 1-3 optionally substituted rings selected from the group consisting of an aromatic ring, a hetero aromatic ring or an aliphatic ring. A is --R.sub.1 --Z--Y in which R.sub.1 is H, C.sub.1 -C.sub.30 -alkyl or -aralkyl or phenyl, Z is a direct bond or CH.sub.2, S, O or NH, Y is CH.sub.3, OR.sub.3, SR.sub.3, NHR.sub.3, N(R.sub.3).sub.2, COOR.sub.3, COOM, SO.sub.3 R.sub.3 or SO.sub.3 M in which R.sub.3 is C.sub.1 -C.sub.30 alkyl and M is alkali metal, produced from 3,6-dihalogen- or -dintro-1,2,4,5-diimide having an N,N-substituent and which is suitable for use as a monomer for high temperature structural and functional polymers, and a process for producing the same are disclosed.

Polyarylether containing N-substituted imide groups and process for

A polyamideimide for optical communications, having a minimum optical loss in a near infrared light wavelength range, high thermal resistance and good film processibility, and a method for preparing the same are provided. The polyamideimide is very useful as an optical material in the optical communications field adopting the light of near infrared light wavelength.

Growing community of inventors

Chungcheongnam-do, South Korea

Eun-young Chung