Samsung Electronics Co., Ltd.

Korea Advanced Institute of Science and Technology

Tokyo Ohka Kogyo Co., Ltd.

Eun-sung Kim

Shi-yong Yi

Jae-woo Nam

Seung-chul Kwon

Jeong-ju Park

Kyeong-mi Lee

Hyun-woo Kim

Chul-Ho Shin

Shi-Yong Yi

Jae-young Choi

Jae-Han Lee

Tasuku Matsumiya

Cha-Won Koh

Tae-Kyu Kim

Won-young Kim

Young-hee Lee

Kyoung-seon Kim

Dae-youp Lee

Bong-cheol Kim

Katsumi Ohmori

Seung-Hyun Hong

Jung-hyeon Kim

Seok-hwan Oh

Oleg Feygenson

Sang-ouk Kim

Seung-hyun Baik

Dae-Yong Kang

Chul-ho Shin

Tsuyosh Kurosawa

Shi-young Yi

Young-joo Choi

Byeong-Hwan Son

A filter structure for chemical solution used in manufacturing an integrated circuit includes: a first membrane structure comprising a plurality of membrane units, each comprising a cathode comprising a plurality of first openings, an anode comprising a plurality of second openings, and an insulating layer between the cathode and the anode; and a filter housing configured to receive the first membrane structure therein, the filter housing comprising an inlet through which the chemical solution is introduced and an outlet through which the chemical solution is discharged. The first membrane structure is configured such that when an electric field is applied between the cathode and the anode while the chemical solution introduced through the inlet passes through the first membrane structure, impurities having both positively charged particles and negatively charged particles in the chemical solution are trapped in the first membrane structure.

Filter structure for chemical solution used in manufacturing integrated circuit and apparatus for supplying chemical solution including filter structure for chemical solution

A method of forming a micropattern, a substrate surface inspection apparatus, a cantilever set for an atomic force microscope, and a method of analyzing a surface of a semiconductor substrate, and a probe tip the method including forming pinning patterns on a semiconductor substrate; forming a neutral pattern layer in spaces between the pinning patterns; and inspecting a surface of a guide layer that includes the pinning patterns and the neutral pattern layer by using an atomic force microscope (AFM).

Cantilever set for atomic force microscopes, substrate surface inspection apparatus including the same, method of analyzing surface of semiconductor substrate by using the same, and method of forming micropattern by using the same

In a method of forming patterns, an object layer is formed on a substrate. Guide patterns are formed on the object layer. A brush layer is formed using a brush polymer on surfaces of the guide patterns. The brush polymer includes at least one of a first brush polymer and a second brush polymer. The first brush polymer includes a hydrophobic repeating unit and a hydrophilic terminal group having at least two hydroxyl groups. The second brush polymer includes a hydrophobic repeating unit and a hydrophilic random repeating unit having a hydroxyl group. A self-aligned layer is formed using a block copolymer on the brush layer to form blocks aligned around the guide patterns. At least a portion of the blocks is transferred to the object layer.

Methods of forming patterns of semiconductor devices

A method of forming a pattern of a semiconductor device includes forming a lower film on a substrate having a first surface and a second surface at different levels, forming an upper film of hydrophobic material on the lower film, forming a block copolymer film on the upper film, phase-separating the block copolymer film to form first patterns spaced apart from one another and a second pattern spanning the first patterns and interposed between a bottom surface of each of the first patterns and the upper film, removing the first patterns, and performing an etch process using the second pattern or a residual part of the second pattern as an etch mask.

Method of forming pattern of semiconductor device

A method of forming a fine pattern includes forming pillar-shaped guides regularly arranged on a feature layer, forming a block copolymer layer on the feature layer around the pillar-shaped guides, phase separating the block copolymer layer, forming first domains regularly arranged on the feature layer with the pillar-shaped guides, forming a second domain on the feature layer surrounding the pillar-shaped guides and the first domains, removing the first domains, and forming holes corresponding with the first domains in the feature layer by etching the feature layer using the pillar-shaped guides and the second domain as etch masks. The block copolymer layer includes a polymer blend having first and second polymer blocks having first and second repeat units, respectively, a first homopolymer and a second homopolymer. The first domains include the first polymer block and the first homopolymer, and the second domain includes the second polymer block and the second homopolymer.

Method of forming fine pattern and method of manufacturing integrated circuit device using the method

The present inventive concept provides a method of forming a fine pattern including forming a plurality of pillar-shaped guides that are regularly arranged on a feature layer.

Methods of forming fine patterns and methods of manufacturing integrated circuit devices using the methods

In a method of forming holes, a plurality of guide patterns physically spaced apart from each other is formed on an object layer. The guide pattern has a ring shape and includes a first opening therein. A self-aligned layer is formed on the object layer and the guide patterns to fill the first opening. Preliminary holes are formed by removing portions of the self-aligned layer which are self-assembled in the first opening and between the guide patterns neighboring each other. The object layer is partially etched through the preliminary holes.

Methods of forming holes using mask pattern structures

A heterogeneous laminate including: graphene; and a thermoelectric inorganic compound disposed on the graphene.

Heterogeneous laminate including graphene, and thermoelectric material, thermoelectric module, and thermoelectric apparatus including the heterogeneous laminate

A method of forming patterns includes forming a photoresist film on a substrate. The photoresist film is exposed with a first dose of light to form a first area and a second area in the photoresist film. A first hole and a second hole are formed by removing the first area and the second area with a first developer. The photoresist film is re-exposed with a second dose of the light to form a third area in the photoresist film between the first hole and the second hole. A third hole is formed between the first hole and the second hole by removing the third area with a second developer.

Method of forming patterns

Methods of forming contact holes include forming a first guide pattern over an etching target layer. The first guide pattern has first openings each extending in a first direction and each first opening arranged in a direction perpendicular to the first direction. A first BCP structure is formed in each first opening. The first BCP structure includes first material layers in the first direction at a first pitch in each of the first openings, and second material layers filling a remaining portion of each first opening. First holes are formed by removing the first material layers. A second guide pattern is formed over the first guide pattern and the second material layers, and the above processes are performed on the second guide pattern to form second holes. Portions of the etching target layer overlapped by the first holes or the second holes are removed to form a desired pattern.

Methods of forming contact holes

A method includes forming a hydrophilic guide layer, a DBARC layer and a photoresist film. A portion of the photoresist film and DBARC layer is exposed to form exposed and unexposed portions. The unexposed photoresist film is removed to form a photoresist pattern including the exposed photoresist film portion. A neutral layer is formed on the photoresist pattern. The photoresist pattern and the DBARC layer of the exposed portion are removed to form first opening portions exposing the guide layer. A block copolymer layer includes a block copolymer having first and second polymer blocks coated on the neutral layer while filling the first opening portions. The block copolymer layer is microphase separated to form a pattern layer including first and second patterns. A pattern including one polymer block is removed to form a pattern mask. The object layer is etched to form a pattern including second opening portions.

Methods of forming a pattern

Provided is a photomask used in fabrication of a semiconductor device. The photomask includes first and second regions to be transferred onto a semiconductor substrate having a step difference. The first and second regions have mask patterns. The mask patterns of the first region have a different shape from the mask patterns of the second region. The mask patterns of the second region have concave and convex portions disposed in opposite lateral portions thereof.

Photomask used in fabrication of semiconductor device

A method of reworking a semiconductor substrate and a method of forming a pattern of semiconductor device using the same without damage to an organic anti-reflective coating (ARC) is provided. The method of reworking a semiconductor substrate includes forming a photoresist pattern on a substrate having the organic ARC formed thereon. An entire surface of the substrate having the photoresist pattern formed thereon may be exposed when a defect is present in the photoresist pattern. The entire-surface-exposed photoresist pattern may be removed by performing a developing process without damage to the organic ARC.

Method of reworking a semiconductor substrate and method of forming a pattern of a semiconductor device

In a method of determining a focus position for a substrate exposure process and a substrate exposure apparatus capable of performing the same, a reticle having a light-transmitting region may be illuminated by an off-axis illumination light. A projected light, which is transmitted through the reticle and a projection optical system, may be detected by a light sensor disposed on a substrate stage. An intensity of the projected light measured at a light-receiving surface of the light sensor may vary in accordance with positions of the light-receiving surface. The focus position may be determined based on the variations in the intensity of the projected light.

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Seoul, South Korea

Eun-sung Kim