Sk Enpulse Co., Ltd.

Skc Solmics Co., Ltd.

Ecovance Co. Ltd.

Eun Sun Joeng

Jong Wook Yun

Jang Won Seo

Hye Young Heo

Deok Su Han

Seung Chul Hong

Han Teo Park

Kyu Hun Kim

Jangwon Seo

Hoon Tae Kim

Sunghoon Yun

Jae In Ahn

Kyung Youn Kim

Seong Dong Kim

Hyeong Ju Lee

Jun Su Byeon

Jang Kuk Kwon

Sung Hoon Yun

Hwan Chul Kim

Hyeyoung Heo

Seung Kyun Kim

Yong Ju Jeong

Su Young Moon

Provided is a polishing composition for a semiconductor process comprising abrasive particles, the abrasive particles containing an amine-based polishing rate improver, and comprising the amine-based polishing rate improver. Provided is a polishing composition for a semiconductor process further comprising an amine-based surface modifier around the surface of the abrasive particles, wherein the sum of the content of an amine group contained in the amine-based polishing rate improver and the content of an amine group contained in the amine-based surface modifier is 0.0185% by weight or more based on the total composition weight. The polishing composition for a semiconductor process may implement the polishing rate and defect prevention performance within a target range in polishing the boron-doped polysilicon layer.

Polishing pad and method for manufacturing semiconductor device using same

The present disclosure is a composition for a semiconductor process applied to a polishing process of a semiconductor wafer and, more specifically, to a semiconductor process involving a polishing process of a semiconductor wafer, wherein the composition includes abrasive particles, and the zeta potential of the abrasive particles is −50 mV to −10 mV at a pH of 6, and the zeta potential change rate represented by Equation 1 below is 6 mV to 30 mV: [Equation 1] Zeta potential change rate (mV/pH)=|(Z6−Z5)/(p6−p5)| where p6 denotes pH 6, p5 denotes pH 5, Z6 denotes a zeta potential at the pH 6, and Z5 denotes a zeta potential at the pH 5.

Composition for semiconductor process, method for preparing the same and method for preparing semiconductor device using the same

Provided is a polishing pad including a polishing layer, wherein the nuclear magnetic resonance (NMR)C spectrum of a processed composition prepared by adding 1 g of the polishing layer to a 0.3 M aqueous solution of potassium hydroxide (KOH) and allowing the mixture to react in a closed container at a temperature of 150° C. for 48 hours includes a first peak appearing at 15 ppm to 18 ppm, a second peak appearing at 9 ppm to 11 ppm, a third peak appearing at 138 ppm to 143 ppm, and a fourth peak appearing at 55 ppm to 65 ppm, and the softening control index calculated by Equation 1 is 0.10 to 0.45. The polishing pad includes the polishing layer having physical properties corresponding to the softening control index, and thus may exhibit a removal rate and defect prevention performance within desired ranges in polishing of a polishing target.

Polishing pad and method of fabricating semiconductor device using the same

The present disclosure relates to an endpoint detection window of a polishing pad for use in a polishing process. The polishing pad may prevent an error in detection of the endpoint of the polishing process by preventing a difference in endpoint detection performance from occurring due to a difference in the wavelength of a laser between polishing apparatuses. The present disclosure may also provide a method of fabricating a semiconductor device using the polishing pad.

The present disclosure relates to a polishing pad, a method of manufacturing the polishing pad, and a method of manufacturing a semiconductor device using the same. In the polishing pad, an unexpanded solid-phase blowing agent is included in a polishing composition when a polishing layer is manufactured, and the unexpanded solid-phase blowing agent is expanded during a curing process to form a plurality of uniform pores in the polishing layer, such that defects occurring on a surface of the semiconductor substrate may be prevented. In addition, the present disclosure may provide a method of manufacturing a semiconductor device to which the polishing pad is applied.

Polishing pad, manufacturing method thereof and preparing method of semiconductor device using the same

The composition according to an embodiment employs a mixture of curing agents, which comprises a first curing agent containing sulfur and a second curing agent containing an ester group, whereby it is possible to control the physical properties of the polishing pad as necessary.

Composition for polishing pad and polishing pad

Disclosed is an eco-friendly biodegradable polyester resin composition, including: a polyester resin including a diol, an aromatic dicarboxylic acid and an aliphatic dicarboxylic acid, wherein an alternating ratio of the polyester resin is 0.3 to 0.7, wherein the alternating ratio is a ratio of a diol, bonded between the aromatic dicarboxylic acid and the aliphatic dicarboxylic acid, among the diol. The diol may include 1,4-butanediol; the aromatic dicarboxylic acid may include terephthalic acid or dimethyl terephthalate; and the aliphatic dicarboxylic acid may include adipic acid. When the biodegradable polyester resin composition is dried at 80° C., placed in a stainless steel mold, and compressed at 210° C. under a pressure of 10 MPa for 3 minutes to produce a polyester sheet having a thickness of 300 μm, the sheet has a tensile strange range from 40 MPa to 60 MPa, an elongation at break range from 800% to 1100%, and Young's modulus range from 20 MPa to 80 MPa.

Biodegradable polyester resin composition, biodegradable polyester film including the same and biodegradable molded article including biodegradable polyester resin composition

The present invention provides a polishing pad whose crosslinking density is adjusted to enhance the performance of the CMP process such as polishing rate and cut pad rate. In addition, in the process for preparing a polishing pad according to the embodiment, it is possible to implement such a crosslinking density by a simple method of controlling the preheating temperature of the mold for curing. Thus, the polishing pad may be applied to a process of preparing a semiconductor device, which comprises a CMP process, to provide a semiconductor device such as a wafer of excellent quality.

Polishing pad with improved crosslinking density and process for preparing the same

In the composition according to the embodiment, the content of an unreacted diisocyanate monomer in a urethane-based prepolymer may be controlled to control the physical properties thereof such as gelation time. Thus, since the micropore characteristics, polishing rate, and pad cut rate of a polishing pad obtained by curing the composition according to the embodiment may be controlled, it is possible to efficiently manufacture high-quality semiconductor devices using the polishing pad.

Composition for a polishing pad, polishing pad, and process for preparing the same

Embodiments relate to a polishing pad for use in a chemical mechanical planarization (CMP) process of semiconductor devices. The polishing pad may secure excellent polishing rate and within-wafer non-uniformity by controlling the physical properties such as initial load resistivity and compressive elasticity of the cushion layer and/or the laminate as defined by Equations 1 and 2: 

Polishing pad and method for preparing semiconductor device using same

The polishing pad according to an embodiment adjusts the content of elements present in the polishing layer, thereby controlling the bonding strength between the polishing pad and the polishing particles and enhancing the bonding strength between the polishing particles and the semiconductor substrate (or wafer), resulting in an increase in the polishing rate. It is possible to enhance not only the mechanical properties of the polishing pad such as hardness, tensile strength, elongation, and modulus, but also the polishing rate for both a tungsten layer or an oxide layer. Accordingly, it is possible to efficiently fabricate a semiconductor device of excellent quality using the polishing pad.

Polishing pad, process for preparing the same, and process for preparing a semiconductor device using the same

In the composition according to the embodiment, the composition of oligomers that constitute the chains in a urethane-based prepolymer may be adjusted to control the physical properties thereof such as gelation time. Thus, since the micropore characteristics, polishing rate, and pad cut rate of a polishing pad obtained by curing the composition according to the embodiment may be controlled, it is possible to efficiently manufacture high-quality semiconductor devices using the polishing pad.

Composition for polishing pad, polishing pad and preparation method thereof

In the composition according to an embodiment, the weight ratio of toluene 2,4-diisocyanate in which one NCO group is reacted and unreacted toluene 2,6-diisocyanate in the urethane-based prepolymer is adjusted, whereby such physical properties as gelation time can be controlled. Thus, the polishing rate and pad cut rate of a polishing pad obtained by curing the composition according to the embodiment may be controlled while it has a hardness suitable for a soft pad, whereby it is possible to efficiently manufacture high-quality semiconductor devices using the polishing pad.

Growing community of inventors

Ulsan, South Korea

Eun Sun Joeng