Samsung Electronics Co., Ltd.

Samsung Sdi Co., Inc.

Eun-Suk Cho

Choong-Ho Lee

Tae-Yong Kim

Zin Min Park

Dong-Gun Park

Ju-Yong Kim

Ji-Seong Han

Hyun-Jeong Lim

Suk-Kang Sung

Yoon-Dong Park

Ho-Jin Kweon

Chul Ho Lee

Suk-Pil Kim

In-Hyuk Son

Won-joo Kim

Dong-Myung Suh

Byung-Yong Choi

Myoung-Kwan Cho

Sang-Wan Nam

Jae-Hoon Lee

Dong-Hyun Kim

Jae-Man Yoon

Sung-Hoi Hur

Jong-Hoon Lee

Hye-Jin Cho

Byung-yong Choi

Dong-Uk Lee

Woo-Pyo Jeong

Hye-jin Cho

Jung-Kurn Park

Wook-Hyun Kwon

Jung-ho Song

Suk-Joon Son

Yun-Ho Hong

Suk-kang Sung

Yoshida Yasuki

A non-volatile memory device includes a memory cell array region in which memory cells are vertically stacked on a substrate and a page buffer region in which first and second page buffers are arranged. A first distance between the memory cell array region and the first page buffer is shorter than a second distance between the memory cell array region and the second page buffer. The first page buffer includes a first transistor driven in response to a first control signal. The second page buffer includes a second transistor driven in response to a second control signal corresponding to the first control signal. At least one of design constraints and processing constraints with respect to the first and second transistors is different.

Non-volatile memory device having page buffers with differing characteristics

Provided are a method for manufacturing a memory device and a memory device manufactured by the method. The memory device may be a flash memory device. The method for manufacturing the memory device may include sequentially stacking a tunnel dielectric, a floating gate conductive layer, an inter-gate dielectric, and a control gate conductive layer on a semiconductor substrate; anisotropically etching the floating gate conductive layer, the inter-gate dielectric, and the control gate conductive layer to form gate structures. The gate structures may be separated by regions where top surfaces of the tunnel dielectric are exposed, the exposed top surfaces being damaged during formation of the gate structures. The method includes reacting the exposed top surfaces of the tunnel dielectric damaged during the formation of the gate structures with a reaction gas comprising ammonium fluoride to form a reaction by-product on the exposed top surfaces of the tunnel dielectric, and removing the reaction by-product.

Memory device and method for manufacturing memory devices

A fuel cell system is provided comprising: a reformer for generating hydrogen from hydrogen-containing fuel; and at least one electricity generator for generating electric energy through an electrochemical reaction of hydrogen and oxygen. The reformer includes a main body in which a plurality of reaction sections for generating hydrogen from hydrogen-containing fuel is integrally formed. A heating section is disposed in contact with the main body in order to supply different amounts of thermal energy to the plurality of reaction sections.

Heated reformer and fuel cell system having the same

A catalyst for a reformer of a fuel cell system, a reformer for a fuel cell system including the catalyst, and a fuel cell system including the reformer are provided. The reformer includes a first reacting region that generates heat energy through oxidation of fuel and includes an oxidation catalyst having a Pd catalyst supported by an AlOcarrier and a Pt catalyst supported by an AlOcarrier, and a second reacting region that generates hydrogen gas from the fuel through a reforming reaction by the heat energy. The reformer includes at least two pipes each having an independent internal space and letting the fuel containing hydrogen pass therethrough.

Catalyst for reformer used in fuel cell system, reformer, and fuel cell system comprising same

There is provided a fuel cell system comprising: a stack for generating electric energy through a reaction between hydrogen and oxygen; a reformer for generating hydrogen from fuel through a catalytic reaction of the fuel using thermal energy and for supplying the generated hydrogen to the stack; a fuel supply unit for supplying the fuel to the reformer; and an oxygen supply unit for supplying oxygen to the reformer and the stack. The reformer comprises: a tubular reactor body; a heat source section which is formed in the inner space of the tubular reactor body and which generates thermal energy in a predetermined temperature range through an oxidation reaction of fuel; a reforming reaction section which is formed successive to the heat source section and which generates hydrogen from the fuel through a reforming reaction using the thermal energy; and a heat delivery unit which is provided in contact with the tubular reactor body and which delivers the thermal energy to the fuel supplied to the reforming reaction section.

Reformer and fuel cell system having the same

A reformer for a fuel cell including: at least one reaction plate in which a channel is formed on a surface thereof; a cover plate disposed on the surface of the reaction plate; a bonding part which is formed between the reaction plate and the cover plate and which integrally fixes the reaction plate and the cover plate to each other; and a heat processing part which is formed outside the channel and which reduces a contact area between the reaction plate and the cover plate and controls thermal energy supplied to the reaction plate.

Reformer for fuel cell

A module-type fuel cell system including a power module includes a generator installed inside and a power housing having a plurality of connection holes formed sideward, wherein the generator generates electricity through an oxidation-reduction reaction of an oxidizing agent with a hydrogen-containing fuel; a fuel supply module including a fuel supply unit installed inside and a power housing having a plurality of connection holes formed sideward, wherein the fuel supply unit supplies a hydrogen-containing fuel to the generator; an oxidizing agent supply module including an oxidizing agent supply unit installed inside and an oxidizing agent supply housing having connection holes formed sideward, wherein the oxidizing agent supply unit supplies an oxidizing agent to the generator; and a recovery module including a storage space formed therein and a recovery housing having a plurality of connection holes formed sideward, wherein the storage space recovers an unreacted fuel generated in the generator, wherein the power module is closely attached and assembled in one side of the recovery module in a surface-to-surface contact manner, and the fuel supply module and the oxidizing agent supply module are closely attached and assembled in the other side of the recovery module in a surface-to-surface contact manner.

Module-type fuel cell system

Provided are methods for fabricating semiconductor devices incorporating a fin-FET structure that provides body-bias control, exhibits some characteristic advantages associated with SOI structures, provides increased operating current and/or reduced contact resistance. The methods for fabricating semiconductor devices include forming insulating spacers on the sidewalls of a protruding portion of a first insulation film; forming a second trench by removing exposed regions of the semiconductor substrate using the insulating spacers as an etch mask, and thus forming fins in contact with and supported by the first insulation film. After forming the fins, a third insulation film is formed to fill the second trench and support the fins. A portion of the first insulation film is then removed to open a space between the fins in which additional structures including gate dielectrics, gate electrodes and additional contact, insulating and storage node structures may be formed.

Method of fabricating a semiconductor device having a single gate electrode corresponding to a pair of fin-type channel regions

A fuel cell system includes a reformer that includes a plurality of reaction sections for generating hydrogen from hydrogen-containing fuel; a plurality of heating sections which supply thermal energy to the plurality of heating sections and which have a catalyst; and a main body receiving the plurality of reaction sections and the plurality of heating sections. The respective heating sections generate different amounts of thermal energy for the reactions of the respective reaction sections.

Reformer having improved heat delivery and fuel cell system having the same

A method of forming a non-volatile memory device may include forming a fin protruding from a substrate, forming a tunnel insulating layer on portions of the fin, and forming a floating gate on the tunnel insulting layer so that the tunnel insulating layer is between the floating gate and the fin. A dielectric layer may be formed on the floating gate so that the floating gate is between the dielectric layer and the fin, and a control gate electrode may be formed on the dielectric layer so that the dielectric layer is between the control gate and the fin. Related devices are also discussed.

Non-volatile memory cells including fin structures

In a non-volatile memory device allowing multi-bit and/or multi-level operations, and methods of operating and fabricating the same, the non-volatile memory device comprises, in one embodiment: a semiconductor substrate, doped with impurities of a first conductivity type, which has one or more fins defined by at least two separate trenches formed in the substrate, the fins extending along the substrate in a first direction; pairs of gate electrodes formed as spacers at sidewalls of the fins, wherein the gate electrodes are insulated from the semiconductor substrate including the fins and extend parallel to the fins; storage nodes between the gate electrodes and the fins, and insulated from the gate electrodes and the semiconductor substrate; source regions and drain regions, which are doped with impurities of a second conductivity type, and are separately formed at least at surface portions of the fins and extend across the first direction of the fins; and channel regions corresponding to the respective gate electrodes, formed at least at surface regions of the sidewalls of the fins between the source and the drain regions.

Multi-bit multi-level non-volatile memory device and methods of operating and fabricating the same

A NAND-type non-volatile memory device includes a substrate and a device isolation layer disposed on the substrate to define an active region. First and second selection transistors are disposed in the active region, such that each of the first and second selection transistors has a recessed channel. A plurality of memory transistors is disposed in the active region between the first selection transistor and the second selection transistor.

Non-volatile memory devices that include a selection transistor having a recessed channel and methods of fabricating the same

Methods of forming non-volatile memory cells including fin structures

Semiconductor devices including a gate electrode crossing over a semiconductor fin on a semiconductor substrate are provided. A gate insulating layer is provided between the gate electrode and the semiconductor fin. A channel region having a three-dimensional structure defined at the semiconductor fin under the gate electrode is also provided. Doped region is provided in the semiconductor fin at either side of the gate electrode and an interlayer insulating layer is provided on a surface of the semiconductor substrate. A connector region is coupled to the doped region and provided in an opening, which penetrates the interlayer insulating layer. A recess region is provided in the doped region and is coupled to the connector region. The connector region contacts an inner surface of the recess region. Related methods of fabricating semiconductor devices are also provided herein.

Semiconductor devices including transistors having three dimensional channels and methods of fabricating the same

Growing community of inventors

Suwon-si, South Korea

Eun-Suk Cho