Electronics and Telecommunications Research Institute

Korea Telecom

Eun Soo Nam

Jae Kyoung Mun

Jong-Won Lim

Hae Cheon Kim

Hyung Sup Yoon

Sang Choon Ko

Byoung-Gue Min

Sang-Heung Lee

Yong-Hwan Kwon

Dong Min Kang

Young Rak Park

Hokyun Ahn

Seong-Il Kim

Ho Kyun Ahn

Chull Won Ju

Woojin Chang

Ho Young Kim

Myoung Sook Oh

Joong-Seon Choe

Chun Ju Youn

Jong-Hoi Kim

Chi Hoon Jun

Woo Jin Chang

Seon Eui Hong

Jong Min Lee

Kwang-Seong Choi

Bo Woo Kim

Sung-Bum Bae

Yong Won Kim

Kisoo Kim

Bongki Mheen

Duk Jun Kim

Dong Yun Jung

Jongmin Lee

Jae-Sik Sim

Sung Bum Bae

Kyoung Ik Cho

Sung Bock Kim

Jong Won Lim

Dong-Young Kim

Seok-Hwan Moon

Yong Hwan Kwon

Hyung Seok Lee

Jeho Na

Myoungsook Oh

Myung Sook Oh

Jeong-Jin Kim

Je Ho Na

Hyun Kyu Yu

Soon Il Yeo

Young Jun Chong

Bong Ki Mheen

Seong Il Kim

Kyu Jun Cho

Jae Sik Sim

Junbo Park

Ki Hwan Kim

Dong Young Kim

Kyung Hyun Park

Sang Seok Lee

Young Ho Kim

Dong Suk Jun

Hong Yeol Lee

Hong Gu Ji

Ki Soo Kim

Minki Kim

Woo-Young Jang

Jung Kee Lee

Zin Sig Kim

Byoung Gue Min

Kyung Ho Lee

Mi Ran Park

Hyun Wook Jung

Jae Won Do

Hyun-Gyu Jang

Dong Hoon Jang

Zin-Sig Kim

Hyun Soo Lee

Ho Sung Cho

Heacheon Kim

Ki-Jun Sung

Hyungyu Jang

Myungsook Oh

Kyoungwoo Heo

Albert J P Theuwissen

A high electron mobility transistor includes a substrate including a first surface and a second surface facing each other and having a via hole passing through the first surface and the second surface, an active layer on the first surface, a cap layer on the active layer and including a gate recess region exposing a portion of the active layer, a source electrode and a drain electrode on one of the cap layer and the active layer, an insulating layer on the source electrode and the drain electrode and having on opening corresponding to the gate recess region to expose the gate recess region, a first field electrode on the insulating layer, a gate electrode electrically connected to the first field electrode on the insulating layer, and a second field electrode on the second surface and contacting the active layer through the via hole.

High electron mobility transistor and fabrication method thereof

Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes: an active region provided on a substrate; an inlet channel formed as a single cavity buried in one side of the substrate; an outlet channel formed as a single cavity buried in the other side of the substrate; a micro channel array comprising a plurality of micro channels, wherein the plurality of micro channels are formed as a plurality of cavities buried in the substrate, and one end of the micro channel array is connected to a side of the inlet channel and the other end of the micro channel array is connected to a side of the outlet channel; and a micro heat sink array separating the micro channels from one another.

Semiconductor device and method of fabricating the same

Provided is a bridge diode according to an embodiment of the inventive concept. The bridge diode includes a first structure including a first lower nitride film and a first upper nitride film, which are laminated on the substrate, a second structure including a second lower nitride film and a second upper nitride film, which are laminated on the substrate, a first electrode structural body disposed on the first structure, and a second electrode structural body disposed on the second structure. The first electrode structural body includes a first electrode, a second electrode, and a third electrode, which are arranged in a clockwise direction, the second electrode structural body includes a fourth electrode, a fifth electrode, and a sixth electrode, which are arranged in a clockwise direction, the first electrode and the sixth electrode, which are connected to each other, are connected to an external circuit, the third electrode and the fourth electrode, which are connected to each other, are connected to an external circuit, and each of the second electrode and the fifth electrode is connected to the external circuit.

Bridge diode

Provided herein is a semiconductor device including a substrate; an active layer formed on top of the substrate; a protective layer formed on top of the active layer and having a first aperture; a source electrode, driving gate electrode and drain electrode formed on top of the protective layer; and a first additional gate electrode formed on top of the first aperture, wherein an electric field is applied to the active layer, protective layer and driving gate electrode due to a voltage applied to each of the source electrode, drain electrode and driving gate electrode, and the first additional gate electrode is configured to attenuate a size of the electric field applied to at least a portion of the active layer, protective layer and driving gate electrode.

Semiconductor device and fabrication method thereof

Provided is an electronic device. The electronic device includes a first semiconductor layer and a second semiconductor layer sequentially stacked on a substrate and a source electrode, a gate electrode, and a drain electrode arranged on the second semiconductor layer. The electronic device further includes a field plate which is electrically connected to the source electrode and extends towards the drain electrode, wherein the field plate becomes farther away from the substrate as the field plate becomes closer to the drain electrode.

Electronical device

Provided is a semiconductor device. The semiconductor device includes a substrate including a cantilever configured to generate a flow of cooling media through dynamic movement, an active area on the substrate which an electronic device is provided on, an insulation layer disposed to be spaced apart from the active area on the substrate, a lower electrode on the insulation layer, a piezoelectric film on the lower electrode, and an upper electrode on the piezoelectric film.

Semiconductor device

A semiconductor device may include a substrate having a lower via-hole, an epitaxial layer having an opening exposing a top surface of the substrate, a semiconductor chip disposed on the top surface of the substrate and including first, second, and third electrodes, an upper metal layer connected to the first electrode, a supporting substrate disposed on the upper metal layer and having an upper via-hole, an upper pad disposed on the substrate and extending into the upper via-hole, a lower pad connected to the second electrode in the opening, and a lower metal layer covering a bottom surface of the substrate and connected to the lower pad through the lower via-hole.

Disclosed are a method and an apparatus for transmitting and receiving coherent optical OFDM. The apparatus includes: a transmitted OFDM digital signal processing unit outputting an in-phase (I) component digital signal and a quadrature phase (Q) component digital signal; a digital-analog converter converting the in-phase (I)-component digital signal and the quadrature-phase (Q)-component digital signal into an in-phase (I)-component analog signal and a quadrature-phase (Q)-component analog signal, respectively; an adder adding an additional pilot tone signal to each of the in-phase (I)-component analog signal and the quadrature-phase (Q)-component analog signal outputted from the digital-analog converter; and an optical I/Q modulator up-converting the in-phase (I)-component analog signal added with the additional pilot tone signal and the quadrature-phase (Q)-component analog signal added with the additional pilot tone signal to an optical domain to output a coherent optical OFDM signal including the additional pilot tone signal.

Method and apparatus for transmitting and receiving coherent optical OFDM

Disclosed are a laser radar system and a method for acquiring an image of a target, and the laser radar system includes: a beam source to emit the laser beam; a beam deflector disposed between the beam source and the target, and configured to deflect the laser beam emitted from the beam source in a scanning direction of the target as time elapses; and an optical detector configured to detect the laser beam reflected from the target, which is provided a plurality of beam spots having a diameter D; and a receiving optical system disposed between the target and the optical detector and configured to converge the laser beam reflected from the target, and the optical detector includes a detecting area having a diameter Dthat satisfies an equation of &#x221a;{square root over (2)}&#xd7;P+2&#xd7;D&#x2266;D&#x2266;2&#xd7;Dand an equation of (4/&#x3c0;)&#xd7;&#x3bb;&#xd7;F_number&#x3c;D&#x3c;D.

Laser radar system and method for acquiring 3-D image of target

A field effect transistor is provided. The transistor may include a source electrode and a drain electrode provided spaced apart from each other on a substrate and a '+'-shaped gate electrode provided on a portion of the substrate located between the source and drain electrodes.

Transistor and method of fabricating the same

Disclosed is a manufacturing method of a high electron mobility transistor. The method includes: forming a source electrode and a drain electrode on a substrate; forming a first insulating film having a first opening on an entire surface of the substrate, the first opening exposing a part of the substrate; forming a second insulating film having a second opening within the first opening, the second opening exposing a part of the substrate; forming a third insulating film having a third opening within the second opening, the third opening exposing a part of the substrate; etching a part of the first insulating film, the second insulating film and the third insulating film so as to expose the source electrode and the drain electrode; and forming a T-gate electrode on a support structure including the first insulating film, the second insulating film and the third insulating film.

High electron mobility transistor and manufacturing method thereof

Provided is a feedback amplifier. The feedback amplifier includes: an amplification circuit unit amplifying a burst packet signal inputted from an input terminal and outputting the amplified voltage to an output terminal; a feedback circuit unit disposed between the input terminal and the output terminal and controlling whether to apply a fixed resistance value to a signal outputted to the output terminal; a packet signal detection unit detecting a peak value of a burst packet signal from the output terminal and controlling whether to apply the fixed resistance value; and a bias circuit unit generating a bias voltage, wherein the feedback circuit unit determines a feedback resistance value to change the fixed resistance value in response to at least one control signal and adjusts a gain by receiving the bias voltage.

Feedback amplifier

Disclosed is a system of a dynamic range three-dimensional image, including: an optical detector including a gain control terminal capable of controlling an optical amplification gain; a pixel detecting module for detecting a pixel signal for configuring an image by receiving an output of the optical detector; a high dynamic range (HDR) generating module for acquiring a dynamic range image by generating a signal indicating a saturation degree of the pixel signal and combining the pixel signal based on the pixel signal detected by the pixel detecting module; and a gain control signal generating module generating an output signal for supplying required voltage to the gain control terminal of the optical detector based on the magnitude of the signal indicating the saturation degree of the pixel signal.

Dynamic range three-dimensional image system

Provided is an apparatus and method for measuring IQ imbalance, and in particular, is an apparatus and method for measuring IQ imbalance for an optical receiver. The apparatus for measuring IQ imbalance for an optical receiver includes a light generating unit generating optical and reference signals to provide the optical and reference signals to an optical receiver, a graph creating unit creating a Lissajous figure by using an in-phase (I) signal and a quadrature-phase (Q) signal output from the optical receiver in response to the optical and reference signals, and a calculating unit calculating IQ imbalance for the optical receiver with reference to the Lissajous figure.

Apparatus and method for measuring IQ imbalance for optical receiver

Growing community of inventors

Daejeon, South Korea

Eun Soo Nam