Samsung Electronics Co., Ltd.

Eun-soo Kim

Young-Hoon Park

Tae-Seok Oh

June-Taeg Lee

Sang-il Jung

Chan Jae Park

Jae-Ho Song

Dae-cheol Seong

Jong-wook Hong

Won-Je Park

Jin-Hyeong Park

Keo-sung Park

Won-jeong Lee

Pu-ra Kim

Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern.

Image sensor and method of manufacturing the same

Disclosed is an image sensor and method of fabricating the same. The image sensor includes a photoelectric transformation region formed in a semiconductor substrate, and pluralities of interlayer dielectric films formed over the photoelectric transformation regions. The interlayer dielectric films contain multilevel interconnection layers. A color filter layer is disposed in a well region formed in the interlayer dielectric films over the photoelectric transformation region. A passivation layer is interposed between the color filter layer and the interlayer dielectric films.

Image sensor with well regions of different depths and method of fabrication thereof

Image sensor and method of fabrication

Growing community of inventors

Seongnam-si, South Korea

Eun-soo Kim