Samsung Electronics Co., Ltd.

Seagate Technology International

Eun-sik Kim

Chee-kheng Lim

Seung-bum Hong

Yong-Su Kim

Ju-Hwan Jung

Hyoung-soo Ko

Hong-sik Park

Sung-dong Kim

Sung-Chul Lee

Chul-min Park

Dong-Ki Min

Kook-hyun Sunwoo

Sang-Hun Lee

Sung-chul Lee

Tae-wan Kim

Sung-hoon Choa

Joo-ho Lee

Kyoung-won Na

In-Jun Hwang

Jin-seo Noh

Young-hun Im

Kyoung-lock Baeck

Yun-Bo Yang

Kui-Hyun Ro

Young-jae Jung

Kil-yeon Kim

Heon-gwon Lee

Hong-seog Kim

A method for testing a plurality of semiconductor apparatuses, the method including mounting a plurality of semiconductor apparatuses on a first test board, wherein the plurality of semiconductor apparatuses include test circuits, loading test software into the test circuits, performing, by using the test circuits, self-tests on the plurality of semiconductor apparatuses based on the test software, and removing the plurality of semiconductor apparatuses, which have completed the self-tests, from the first test board. Upon completion of the loading of the test software, the test software is loaded into test circuits of a plurality of semiconductor apparatuses on a second test board, while the self-tests are performed on the plurality of semiconductor apparatuses on the first test board.

Method and equipment for testing semiconductor apparatuses simultaneously and continuously

Provided are a perpendicular magnetic recording head and a method of manufacturing the same. The perpendicular magnetic recording head includes a main pole including a pole tip applying a recording magnetic field to a recording medium, a coil surrounding the main pole in a solenoid shape such that recording magnetic field for recording information to a recording medium is generated at the pole tip, and a return yoke forming a magnetic path for the recording magnetic field together with the main pole and surrounding a portion of the coil passing above the main pole. The number of times that the coil passes above the main pole is smaller than the number of times that the coil passes below the main pole.

Perpendicular magnetic recording head and method of manufacturing the same

Provided is a memory device employing magnetic domain wall movement. The memory device includes a writing track and a column structure. The writing track forms magnetic domains that have predetermined magnetization directions. The column structure is formed on the writing track and includes at least one interconnecting layer and at least one storage track.

Memory device employing magnetic domain wall movement

Provided are a data storage device using a magnetic domain wall movement and a method of operating the data storage device. The data storage device includes a magnetic layer which has a plurality of magnetic domains, a current applying unit which applies current for a magnetic domain wall movement to the magnetic layer, and a head for reading and writing, wherein the magnetic layer comprises a plurality of perpendicular magnetic layers formed on a substrate in a plurality of rows and columns, and a horizontal magnetic layer formed on the perpendicular magnetic layers to connect the perpendicular magnetic layers.

Data storage device using magnetic domain wall movement and method of operating the same

A method of data recording and reading for a memory device employing magnetic domain wall movement. The memory device includes a writing track, an interconnecting layer formed on the writing track, and a recording track formed on the interconnecting layer.

Data writing and reading method for memory device employing magnetic domain wall movement

A magnetic memory device includes a memory region, an input and a sensor. The memory region includes a free layer, a pinned layer and a non-magnetic layer. The free layer has adjacent sectors and a magnetic domain wall. The pinned layer corresponds to the sectors and has a fixed magnetization direction. The non-magnetic layer is formed between the free layer and the pinned layer. The memory region includes a magnetic domain wall stopper for stopping the magnetic domain wall formed at each boundary of the sectors. The input is electrically connected to one end of the free layer for inputting a signal for magnetic domain dragging. The sensor measures a current flowing through the memory region.

Magnetic memory devices using magnetic domain dragging

A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.

Ferroelectric recording medium and writing method for the same

Provided is a magnetic memory device that uses a current induced switching (CID) method. The magnetic memory device that uses a CID method includes a lower electrode, a magnetic resistance structure that is formed on the lower electrode which comprises a free layer whose widths of two sides are varied, and an upper electrode formed on the magnetic resistance structure.

Magnetic random access memory device using current induced switching

Provided are a resistive memory device having a probe array and a method of manufacturing the same. The resistive memory device includes a memory part having a bottom electrode and a ferroelectric layer sequentially formed on a first substrate; a probe part having an array of resistive probes arranged on a second substrate, with the tips of the resistive probes facing the ferroelectric layer so as to write and read data on the ferroelectric layer; and a binding layer which grabs and fixes the resistive probes on or above the ferroelectric layer. The method of manufacturing the resistive memory device includes forming a bottom electrode and a ferroelectric layer sequentially on a first substrate; forming an array of resistive probes on a second substrate; and wafer level bonding the first substrate to the second substrate using a binding layer such that tips of the resistive probes face the ferroelectric layer.

Resistive memory device having array of probes and method of manufacturing the resistive memory device

A semiconductor device to which magnetic domain wall movement is applied is provided. The semiconductor device includes a magnetic substance film in which magnetic domain walls are moved, and the magnetic substance film has a damping constant of 0.015 to 0.1.

Semiconductor device using magnetic domain wall movement

A perpendicular magnetic recording head which moves in a track direction of a recording layer of a perpendicular magnetic recording medium to write information on the recording layer or read information from the recording layer. The perpendicular magnetic recording head includes: the perpendicular magnetic recording medium including a soft magnetic underlayer and the recording layer; a write head including a main pole that applies a magnetic field to, and writes information to, the recording layer and a return pole having a first end which is connected to the main pole and having a second end which is spaced apart from the main pole over an air bearing surface (ABS) of the perpendicular magnetic recording head which is adjacent to the recording layer; and a permanent magnet formed on at least one side of the write head.

Perpendicular magnetic recording head

Provided is a memory device employing magnetic domain wall movement. The memory device includes a first track, an interconnecting layer, and a second track. The first track including a magnetic material is formed in a first direction. The interconnecting layer is formed on the first track. The second track including a magnetic material is formed in a second direction on the interconnecting layer.

A perpendicular magnetic recording head includes: a main pole; a return pole spaced a predetermined gap from the main pole; an induction coil inducing a magnetic field on the main pole; and two or more gap shields, wherein the two or more gap shields are formed in the gap between the main pole and the return pole.

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Seoul, South Korea

Eun-sik Kim