Hynix Semiconductor Inc.

Eun Shil Park

Kwon Hong

Jae Hong Kim

Min Sik Jang

Jae Hyoung Koo

The present invention discloses to a method of forming a gate electrode, the method according to the present invention comprises the steps of forming a lower amorphous silicon layer using silane (SiH) gas and nitrous oxide (NO) gas; forming an upper amorphous silicon layer on the lower amorphous silicon layer; and crystallizing the lower and upper amorphous silicon layers through a thermal process.

Method of forming gate electrode

A flash memory device and a method of manufacturing the same is disclosed. A gate dielectric film formed between a floating gate and a control gate of a flash memory device is formed by laminating an oxide film and a ZrOfilm. Accordingly, the reliability of the flash memory can be improved while securing a high coupling ratio.

Flash memory device and method of manufacturing the same

A non-volatile memory device has a gate dielectric film formed between a floating gate and a control gate. The gate dielectric film is formed by forming an oxide film and a ZrO/AlO/ZrO(ZAZ) film. Accordingly, the reliability of non-volatile memory devices can be improved while securing a high coupling ratio.

The present invention relates to a method of fabricating a flash memory device. According to a method of fabricating a flash memory device in accordance with an aspect of the present invention, a semiconductor substrate over which a tunnel insulating layer and a first conductive layer are formed is provided. A first oxide layer is formed on the first conductive layer using a plasma oxidization process in a state where a back bias voltage is applied. A nitride layer is formed on the first oxide layer. A second oxide layer is formed on the nitride layer. A second conductive layer is formed on the second oxide layer.

Growing community of inventors

Namyangju-si, South Korea

Eun Shil Park