Samsung Electronics Co., Ltd.

Other

Eun-Seok Song

Hee-Seok Lee

Tae-joo Hwang

Seung-Yong Cha

Chan-Kyung Kim

Yun-Hee Lee

Si-hoon Lee

Ju-Youn Choi

Un-Byoung Kang

Sung-woo Park

Young-jae Kim

Yun-seok Choi

Se-Ho You

Baik-woo Lee

Hyung-Sik Hong

Si-Hoon Lee

Gyeong-Su Keum

Jae-Han Park

Edward J Powers

Jae-gwon Jang

YoungHoon Ro

Jong-gwan Yook

Ki-Won Choi

Chung-Hun Park

Jin-Bae Park

Yong-June Shin

Joo-Won Kim

Tok-Son Choe

Seung-Hoon Sung

An electronic device package includes a package substrate, an interposer located above the package substrate and electrically connected to the package substrate, a processing device located above the interposer and electrically connected to the interposer, at least one high bandwidth memory device located above the interposer and electrically connected to the interposer and the processing device, a power management integrated circuit device located above the interposer and electrically connected to the interposer and the processing device, and a passive device located on or inside the interposer and electrically connected to the power management integrated circuit device.

Electronic device package

A semiconductor package includes: a memory sub-package including a first connecting layer and a plurality of memory chips disposed on the first connecting layer; a logic sub-package including a second connecting layer, a controller chip disposed on the second connecting layer, and a buffer chip connected to the controller chip and the plurality of memory chips; and a plurality of inter-package connecting members each of which connects the memory sub-package and the logic sub-package, wherein the buffer chip is connected to the plurality of memory chips via a plurality of first data transfer lines each having a first data transfer rate, the buffer chip is connected to the controller chip via a plurality of second data transfer lines each having a second data transfer rate, and the first data transfer rate is less than the second data transfer rate.

Semiconductor package

A semiconductor package can include a mold substrate having opposite first and second surfaces where a semiconductor chip can be embedded inside the mold substrate. The semiconductor chip can include chip pads where a redistribution layer can be on the first surface of the mold substrate, and the redistribution layer can include redistribution lines therein electrically connected to the chip pads and can include a capacitor redistribution line. A capacitor can include a first electrode including a plurality of conductive pillars connected to the capacitor redistribution line. A dielectric layer can be on the first electrode and a second electrode can be on the dielectric layer.

Semiconductor packages

In one embodiment, a semiconductor device comprising, a substrate comprising a wiring layer, a first conductive shielding layer disposed on the substrate and electrically isolated from the wiring layer, the first conductive shielding layer comprising a first bonding surface and a first end surface extending from the first bonding surface, a semiconductor chip disposed on the first conductive shielding layer, a molding member disposed over the first conductive shielding layer to cover the semiconductor chip, a second conductive shielding layer disposed over the first conductive shielding layer and the molding member, the second conductive shielding layer comprising a second bonding surface and a second end surface extending from the second bonding surface, and a bonding portion disposed between the first and second bonding surfaces, the bonding portion comprising a top surface and a bottom surface opposite to the top surface. The bottom surface of the bonding portion contacts the first bonding surface to form a first contact surface. The top surface of the bonding portion contacts the second bonding surface to form a second contact surface. An area of the second contact surface is larger than an area of the second end surface.

Semiconductor device

A semiconductor package removes power noise by using a ground impedance. The semiconductor package includes an analog circuit block, a digital circuit block, an analog ground impedance structure, a digital ground impedance structure, and an integrated ground. The integrated ground and the analog circuit block are electrically connected via the analog ground impedance structure, and the integrated ground and the digital circuit block are electrically connected via the digital ground impedance structure, and an inductance of the analog ground impedance structure is greater than an inductance of the digital ground impedance structure.

Semiconductor package to remove power noise using ground impedance

Provided is a chip-on-board package. The chip-on-board package may include a board, a grounding pad on a first surface of the board, the grounding pad including a body portion and at least one line portion, and at least two conductive pads on the first surface, the at least two conductive pads being arranged adjacent to the body portion. The at least one line portion may extend between the at least two conductive pads and the at least one line portion may have a narrower width than the at least two conductive pads.

Chip-on-board package

A semiconductor package includes a semiconductor chip having first and second pads, a first insulation layer pattern formed on the semiconductor chip and having first and second openings that expose the first and the second pads, respectively, a first conductive layer pattern elongated along the first insulation layer pattern from the first pad, a first external terminal formed on the first conductive layer pattern, a second insulation layer pattern formed on the first conductive layer pattern and the first insulation layer pattern to expose the first external terminal and having a third opening in communication with the second opening, a second conductive layer pattern elongated along the second insulation layer pattern from the second pad, and a second external terminal formed on the second conductive layer pattern.

Semiconductor package and methods of manufacturing the same

A structure for blocking electromagnetic interference (EMI) may include at least one electromagnetic wave inducing member and an electromagnetic wave filtering member. The at least one electromagnetic wave inducing member may be provided to an electronic device to induce an electromagnetic wave applied to the electronic device. The electromagnetic wave filtering member may be provided to the electronic device to filter the electromagnetic wave induced by the at least one electromagnetic wave inducing member. Thus, the electromagnetic wave filtering member may remove the electromagnetic wave concentrated on the at least one electromagnetic wave inducing member, so that the electromagnetic wave applied to the electronic device may be effectively removed. As a result, circuits in the electronic device may be protected from the EMI.

Structure for blocking an electromagnetic interference, wafer level package and printed circuit board having the same

A chip-on-film package may include a tape wiring substrate, a semiconductor chip mounted on the tape wiring substrate, and a molding compound provided between the semiconductor chip and the tape wiring substrate. The tape wiring substrate may include a film having upper and lower surfaces. Vias may penetrate the film. An upper metal layer may be provided on the upper surface of the film and include input terminal patterns and/or output terminal patterns. The input terminal patterns may include ground terminal patterns and/or power terminal patterns. A lower metal layer may be provided on the lower surface of the film and include a ground layer and/or a power layer. The ground layer and the power layer may cover at least a chip mounting area.

Tape wiring substrate and chip-on-film package using the same

A semiconductor package includes a chip including a conductive pattern thereon, a conductive network attached on a surface of the chip to absorb static electricity, at least one conductive rod attached to the conductive network, wherein the at least one conductive rod is formed substantially perpendicularly to the conductive network, and a grounding portion discharging the static electricity absorbed from the conductive network.

Semiconductor package preventing generation of static electricity therein

A semiconductor device comprises at the wafer level one or more ferrite structures adapted to dampen high frequency noise potentially apparent at signal lines and termination points within the semiconductor device. Related methods of forming said ferrite structures are also disclosed.

Semiconductor package with ferrite shielding structure

A semiconductor package features a ring-shaped silicon decoupling capacitor that reduces simultaneous switching noise. The decoupling capacitor is fabricated on a substrate from silicon using a wafer fabrication process and takes the form of an annular capacitive structure that extends around a periphery of a substrate-mounted integrated circuit (IC). The decoupling capacitor has a reduced thickness on or below a chip level and takes the place of a conventional power/ground ring. Therefore, the decoupling capacitor can be disposed within the package without increasing the thickness and the size of the package. The decoupling capacitor may be coupled to various power pins, allowing optimum wire bonding, shortened electrical connections, and reduced inductance. Bonding wires connected to the decoupling capacitor have higher specific resistance, lowering the peak of the resonance frequency and thereby reducing simultaneous switching noise.

Growing community of inventors

Hwaseong-si, South Korea

Eun-Seok Song