Samsung Electronics Co., Ltd.

Industry-University Cooperation Foundation Hanyang University

Iucf-Hyu

Eun-Mi Lee

Eun Jung Baek

Gi-Sung Yeo

Sung-Woo Lee

Jung-hyeon Lee

Doo-Hoon Goo

Chun-Suk Suh

The present invention relates to a method for in vitro expansion of erythroid cells. The method includes subjecting erythroid cells to 3-dimensional packed cell culture using a porous structure. The use of the composition according to the present invention enables in vitro expansion of erythroid cells in the most efficient manner.

In vitro expansion of erythroid cells

The present invention relates to a method for screening a risk group of a hematologic disease and a method for analyzing the prognosis of a hematologic disease based on the measurement of the level of gelsolin mRNA in buffy coat of peripheral blood or a bone marrow aspirate. The use of the present invention enables the screening of a risk group of a hematologic disease and the analysis of prognosis of a patient with a hematologic disease in an easy and accurate manner.

Diagnosis of hematologic diseases

A method of forming a photomask includes providing a layout of design patterns, setting an optical proximity correction (OPC) with respect to the layout of design patterns, and forming a layout of correction patterns with respect to the layout of design patterns by using the set OPC. The method also includes collecting verification data about the layout of correction patterns by using a layout of contour patterns based on the layout of correction patterns, and verifying whether the layout of design patterns and the layout of correction patterns are substantially identical to each other by using the verification data.

Method of forming photomask by collecting verification data based on a layout of contour patterns

Embodiments of the invention provide methods of forming SAC pads in non-straight semiconductor device having non-straight type or separate type active regions. A plurality of gate line structures extending in one direction may be formed on a semiconductor substrate having non-straight active regions. An interlayer insulating layer covering gate line structures may be formed on the gate line structures. Then, a photo-resist layer may be formed on the interlayer insulating layer. A photo-resist pattern may be formed through exposing and developing the photo-resist layer by using a photo-mask having, for example, a bar type, a wave type, or a reverse active type pattern. Then, contact holes exposing source/drain regions may be formed by etching the interlayer insulating layer using the photo-resist pattern as an etching mask. Contact pads may then be formed by filling the contact holes with a conductive material.

Growing community of inventors

Gyeonggi-do, South Korea

Eun-Mi Lee