Lg Chem, Ltd

Lotte Chemical Corporation

Eun-Mi Choi

Dae-Sik Kim

Min-Jin Ko

Seung-Beom Cho

Mi-Kyoung Kim

Myoung-hwan Oh

Dong-Mok Shin

Jong-Pil Kim

Jang Yul Kim

Hyun-Chul Ha

Taehyuk Kang

Jun-Seok Nho

Wooin Jang

The present disclosure relate to a method for operating a redox flow battery, which includes the steps of discharging the redox flow battery having an anode electrolyte and a cathode electrolyte when a volume difference between the anode electrolyte and the cathode electrolyte is within 20% of a total volume of the anode electrolyte and the cathode electrolyte, while maintaining an open circuit voltage of lower than 1.3 V/cell, and moving the anode electrolyte and/or the cathode electrolyte so that the volume difference is 2% or less between the anode electrolyte and the cathode electrolyte in the redox flow battery after the discharging.

Method for operating redox flow battery

The present disclosure relate to a method for preparing a cathode electrolyte for redox flow batteries including the steps of: forming a first cathode electrolyte by reducing vanadium pentoxide (VO) in an acidic solution in the presence of a specific reducing compound; forming a second cathode electrolyte by reducing vanadium pentoxide (VO) in an acidic solution in the presence of a linear or branched aliphatic alcohol having 2 to 10 carbon atoms; and mixing the first cathode electrolyte and the second cathode electrolyte, and to a redox flow battery including the cathode electrolyte obtained by the preparation method.

Method for preparing cathode electrolyte for redox flow batteries, and redox flow battery

The present invention relates to a slurry for chemical mechanical polishing, comprising an abrasive; an oxidant; an organic acid; and a polymeric additive comprising polyolefin-polyalkyleneoxide copolymer, wherein the polyolefin-polyalkyleneoxide copolymer comprises a polyolefin repeat unit and two or more polyalkyleneoxide repeat units, and at least one polyalkyleneoxide repeat unit is branched.

Slurry for chemical mechanical polishing

The present invention relates to a CMP slurry composition comprising an abrasive particle; a dispersant; an ionic polymer additive; and a non-ionic polymer additive including a polyolefin-polyethylene glycol copolymer including at least two polyethylene glycol repeat unit as a backbone and at least a polyethylene glycol repeating unit as a side chain, and a polishing method with using the slurry composition. The CMP slurry composition shows a low polishing rate to a single-crystalline silicon layer or a polysilicon layer and a high polishing rate to a silicon oxide layer, resulting in having an excellent polishing selectivity.

Slurry composition for CMP, and polishing method

Disclosed is CMP slurry, which includes a pyridine-based compound including at least two pyridinyl groups, and minimizes the occurrence of dishing and erosion of a wiring line.

CMP slurry composition for forming metal wiring line

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Daejeon, South Korea

Eun-Mi Choi