Samsung Electronics Co., Ltd.

Eun-Kyung Yim

In-gyu Baek

Jin-Shi Zhao

Jang-Eun Lee

Hyun-Jun Sim

Se-Chung Oh

Kyung-tae Nam

Myoung-jae Lee

Seung-eon Ahn

Dong-Chul Kim

Sun-Ae Seo

Hyeong-jun Kim

Han-Sin Lee

Jinshi Zhao

Hyun-Jun Shim

Xiang-Shu Li

A nonvolatile memory device includes a bottom electrode on a semiconductor substrate, a data storage layer on the bottom electrode, the data storage layer including a transition metal oxide, and a switching layer provided on a top surface and/or a bottom surface of the data storage layer, wherein a bond energy of material included in the switching layer and oxygen is more than a bond energy of a transition metal in the transition metal oxide and oxygen.

Nonvolatile memory devices and methods of forming the same

A nonvolatile memory device, a method of fabricating the nonvolatile memory device and a processing system including the nonvolatile memory device. The nonvolatile memory device may include a plurality of internal electrodes that extend in a direction substantially perpendicular to a face of a substrate, a plurality of first external electrodes that extend substantially in parallel with the face of the substrate, and a plurality of second external electrodes that also extend substantially in parallel with the face of the substrate. Each first external electrode is on a first side of a respective one of the internal electrodes, and each second external electrode is on a second side of a respective one of the internal electrodes. These devices also include a plurality of variable resistors that contact the internal electrodes, the first external electrodes and the second external electrodes.

Nonvolatile memory devices that use resistance materials and internal electrodes

Nonvolatile memory devices that use resistance materials and internal electrodes, and related methods and processing systems

A resistive memory device includes a first electrode, a resistive oxidation structure and a second electrode. The resistive oxidation structure has sets of oxidation layers stacked on the first electrode. Each set is made up of a first metal oxide layer and a second metal oxide layer which is disposed on and is thinner than the first metal oxide layer. The first metal oxidation layer of the first one of the sets of oxidation layers contacts an upper surface of the first electrode. The second electrode is formed on the resistive oxidation structure. The resistance of the oxidation structure can be changed by an electric field.

Resistive random access memory

Provided is a semiconductor device including a resistive memory element. The semiconductor device includes a substrate and the resistive memory element disposed on the substrate. The resistive memory element has resistance states of a plurality of levels according to generation and dissipation of at least one platinum bridge therein.

Semiconductor devices having resistive memory elements

A multi-bit memory cell stores information corresponding to a high resistive state and multiple other resistive states lower than the high resistive state. A resistance of a memory element within the multi-bit memory cell switches from the high resistive state to one of the other multiple resistive states by applying a corresponding current to the memory element.

Multi-state resistive memory element, multi-bit resistive memory cell, operating method thereof, and data processing system using the memory element

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Seoul, South Korea

Eun-Kyung Yim