Samsung Electronics Co., Ltd.

Eun-Kyoung Kwon

Ki-Tae Lee

Han-Gu Kim

Il-Ryong Kim

Chan-Hee Jeon

Woo-Jin Seo

Gue-Hyung Kwon

In one embodiment, the semiconductor device includes at least one active fin protruding from a substrate, a first gate electrode crossing the active fin, and a first impurity region formed on the active fin at a first side of the first gate electrode. At least a portion of the first impurity region is formed in a first epitaxial layer portion on the active fin. A second impurity region is formed on the active fin at a second side of the first gate electrode. The second impurity region has at least a portion not formed in an epitaxial layer.

Semiconductor device and method for fabricating the same

Semiconductor device including an extended impurity region

An output circuit of an integrated circuit device includes first and second MOS transistors including respective spaced apart pairs of source and drain regions in a substrate, arranged such that respective first and second channels of the first and second MOS transistors are laterally displaced with respect to one another. The output circuit further includes an isolation region in the substrate, disposed between the first and second MOS transistors. A first conductor connects the source region of the first MOS transistor to a power supply node. A second conductor connects the drain region of the first MOS transistor to the source region of the second MOS transistor. A third conductor connects the drain region of the second MOS transistor to an external signal pad of the integrated circuit device. The isolation region may comprise first and second insulation regions surrounding respective ones of the first and second MOS transistors, and a guard ring surrounding and separating the insulation regions.

Method for electrostatic discharge protection in integrated circuits

Circuits and methods for electrostatic discharge protection in integrated circuits

Growing community of inventors

Suwon-si, South Korea

Eun-Kyoung Kwon