Samsung Electro-mechanics Co., Ltd.

Eun Kwang Lee

Sang Moon Lee

Jae Young Na

Won Hee Yoo

Han Seong Jung

An electronic component includes a plurality of dielectric layers; and a plurality of first internal electrodes and a plurality of second internal electrodes alternately disposed with a corresponding dielectric layer interposed therebetween. One of the plurality of first internal electrodes includes a metal layer containing Ni and Sn, a first graphene layer disposed on a lower surface of the metal layer, and a second graphene layer disposed on an upper surface of the metal layer.

Electronic component and method of manufacturing the same

An electronic component includes a body including a plurality of dielectric layers, and a plurality of internal electrodes disposed with a corresponding one of the dielectric layers interposed therebetween; and an external electrode disposed on the body and connected to at least one of the plurality of internal electrodes. One of the plurality of internal electrodes includes an alloy metal including nickel, tin and aluminum. One of the plurality of internal electrodes includes a core internal electrode including a first surface and a second surface opposing each other, and a capping internal electrode disposed on the first surface of the core internal electrode and the second surface of the core internal electrode. The capping internal electrode includes a first alloy region including an alloy of nickel and aluminum.

Electronic component

An electronic component includes a body including a plurality of stacked dielectric layers and internal electrodes disposed with a corresponding dielectric layer interposed therebetween, and external electrodes disposed on the body and connected to corresponding internal electrodes. One of the internal electrodes includes a particle including Ni and Sn and a graphene layer disposed at a boundary of the particle. A ratio of an Sn content to a total content of Ni and Sn is Sn/(Ni+Sn), Sn/(Ni+Sn) of a first region located inside the particle at a first distance from a boundary between the particle and the graphene layer is A1, Sn/(Ni+Sn) of a second region located inside the particle at a second distance from a boundary between the particle and the graphene layer is A2, the second distance is smaller than the first distance, and A1 is smaller than A2.

Growing community of inventors

Suwon-si, South Korea

Eun Kwang Lee