Samsung Electronics Co., Ltd.

Eun-ju Bae

Wan-jun Park

Yo-sep Min

Eun-hong Lee

Sung-ho Park

Jin-seo Noh

Un-jeong Kim

Joong S Jeon

Yo-Sep Min

Yo-seb Min

Jung-hyun Lee

Jun-youn Kim

Young-jin Cho

Won-bong Choi

Joong S Jeong

Provided is a method of forming a metal oxide film on a CNT and a method of fabricating a carbon nanotube transistor using the same. The method includes forming chemical functional group on a surface of the CNT and forming the metal oxide film on the CNT on which the chemical functional group is formed.

Method of fabricating metal oxide film on carbon nanotube and method of fabricating carbon nanotube transistor using the same

Provided are a field emission electrode, a method of manufacturing the field emission electrode, and a field emission device including the field emission electrode. The field emission electrode may include a substrate, carbon nanotubes formed on the substrate, and a conductive layer formed on at least a portion of the surface of the substrate. Conductive nanoparticles may be attached to the external walls of the carbon nanotubes.

Field emission electrode, method of manufacturing the same, and field emission device comprising the same

Method of manufacturing field emission electrode having carbon nanotubes with conductive particles attached to external walls

Provided is a method of transferring carbon nanotubes formed on a donor substrate to an acceptor substrate which may include vertically forming carbon nanotubes on a first substrate, providing a second substrate, aligning the first substrate with the second substrate so that the carbon nanotubes face the second substrate, and transferring the carbon nanotubes onto the second substrate by pressing the first substrate onto the second substrate.

Method of transferring carbon nanotubes

A method of forming a nanowire and a semiconductor device comprising the nanowire are provided. The method of forming a nanowire includes forming a patterned SiGelayer (where, y is a real number that satisfies 0&#x2266;y&#x3c;1) on a base layer, and forming a first oxide layer and at least one nanowire within the first oxide layer by performing a first oxidation process on the patterned SiGelayer.

Method of forming nanowire and method of manufacturing semiconductor device comprising the nanowire

Provided is a method of fabricating a Schottky barrier transistor. The method includes (a) forming a pair of cavities for forming a source forming portion and a drain forming portion having a predetermined depth and parallel to each other and a channel forming portion having a fin shape between the cavities in a substrate;

Method of fabricating Schottky barrier transistor

Provided are an n-type carbon nanotube field effect transistor (CNT FET) and a method of fabricating the n-type CNT FET. The n-type CNT FET may include a substrate; electrodes formed on the substrate and separated from each other; a CNT forrmed on the substrate and electrically connected to the electrodes; a gate oxide layer formed on the CNT; and a gate electrode formed on the gate oxide layer, wherein the gate oxide layer contains electron donor atoms which donate electrons to the CNT such that the CNT may be n-doped by the electron donor atoms.

N-type carbon nanotube field effect transistor and method of fabricating the same

Provided are a vertical carbon nanotube field effect transistor (CNTFET) and a method of manufacturing the same. The method includes: forming a first electrode on a substrate; forming a stack of multiple layers ('multi-layer stack') on the first electrode, the multiple layers including first and second buried layers and a sacrificial layer interposed between the first and second buried layers; forming a vertical well into the multi-layer stack; growing a CNT within the well; forming a second electrode connected to the CNT on the multi-layer stack into which the well has been formed; forming a protective layer on the second electrode; removing the sacrificial layer and exposing the CNT between the first and second buried layers; forming a gate insulating layer on the exposed surface of the CNT; and forming a gate enclosing the CNT on the gate insulating layer. The CNTFET and manufacturing method maximize the effect of electric field produced by the gate due to the channel completely enclosed by the gate while improving a ratio Ion/Ioff of on-current to off-current by fully depleting a depletion layer formed in the channel.

Vertical carbon nanotube-field effect transistor and method of manufacturing the same

A method of manufacturing an inorganic nanotube using a carbon nanotube (CNT) as a template, includes preparing a template on which a CNT or a CNT array is formed, forming an inorganic thin film on the CNT by depositing an inorganic material on the template using atomic layer deposition (ALD), and removing the CNT to obtain an inorganic nanotube or an inorganic nanotube array, respectively.

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Seoul, South Korea

Eun-ju Bae