Samsung Electronics Co., Ltd.

Samsung Sdi Co., Inc.

Samsung Display Co., Ltd.

University of Pennsylvania

University of Toronto

Bilkent University

Other

University of California

Seoul National University

Samsung Electro-mechanics Co., Ltd.

University of Chicago

Postech Research and Business Development Foundation

Davy Process Technology Limited

Eun Joo Jang

Shin Ae Jun

Hyo Sook Jang

Tae Hyung Kim

Yuho Won

Dae Young Chung

Hyun A Kang

Sung Woo Kim

Oul Cho

Jeong Hee Lee

Jihyun Min

Soo Kyung Kwon

Tae Ho Kim

Kwanghee Kim

Yong Wook Kim

Moon Gyu Han

Kun Su Park

Jin A Kim

Shang Hyeun Park

Hongkyu Seo

Seong Jae Choi

Won Sik Yoon

Yongwook Kim

Yong Seok Han

Garam Park

Tae Gon Kim

Tae Kyung Ahn

Nayoun Won

Ha Il Kwon

Seon-Yeong Kim

Chan Su Kim

Sungwoo Hwang

Jung Eun Lim

Heejae Lee

Taekhoon Kim

Ji-Yeong Kim

Jaejun Chang

Sujin Park

Jong Jin Park

Jooyeon Ahn

Won Joo Lee

Hyeyeon Yang

Sung Hun Lee

Sang Jin Lee

Yong Wan Jin

Deukseok Chung

Hyung Kun Kim

Young Hwan Kim

Sung Ho Lee

Hojeong Paek

Tae Won Jeong

Chul Ho Jung

Cherie Renee Kagan

Takahiro Fujiyama

Hyunki Kim

Fumiaki Kato

Masashi Tsuji

Ankit Jain

Yun Sung Woo

In Taek Han

Sjoerd Hoogland

Taek Hoon Kim

Hilmi Volkan Demir

Yusaku Konishi

Oleksandr Voznyy

Sang Heon Lee

Edward Hartley Sargent

Christopher Bruce Murray

Jonggi Kim

Hyunsuk Kim

Jaeyong Lee

Sangsig Kim

Takao Motoyama

Christopher J Murray

Jae Young Choi

Armand Paul Alivisatos

Sang Wook Kim

Jung Woo Lee

In-Taek Han

Jeongmin Kim

Larissa Levina

Tae-ho Kim

Jinyoung Hwang

In Sun Jung

Jun-Mo Yoo

Jin Heong Yim

Sang Sig Kim

Norihito Ishii

Chul Hee Yoo

Kyoung Ah Cho

Dmitri V Talapin

Seong Jin Choi

Hyun Dam Jeong

Kyuhyun Bang

Bulliard Xavier

Hyun Suk Kim

Jong Baek Seon

Tomoyuki Kikuchi

A method of manufacturing a light emitting device that includes providing a first electrode, forming a light emitting layer including quantum dots on the first electrode, forming an electron auxiliary layer on the light emitting layer, and forming a second electrode on the electronic auxiliary layer. The forming of the electron auxiliary layer includes forming an electron auxiliary layer including a plurality of metal oxide nanoparticles, and contacting the plurality of metal oxide nanoparticles with a base including a hydroxyl group (OH).

Light emitting device, method for manufacturing the same, and electronic device including the same

An electroluminescent device including an anode; a cathode; a light emitting layer disposed between the anode and the cathode; and an electron transport layer disposed between the light emitting layer and the cathode, wherein the light emitting layer includes a plurality of semiconductor nanoparticles, the electron transport layer includes zinc oxide nanoparticles including a Group IIA metal and an acid salt of an alkali metal that has an oxycarbonyl moiety, and the zinc oxide nanoparticles have an average size of less than or equal to about 20 nanometers (nm).

Electroluminescent device, production method thereof, and display device including the same

A semiconductor nanocrystal particle represented by Chemical Formula 1 and having a full width at half maximum (FWHM) of less than or equal to about 30 nanometers (nm) in the emission wavelength spectrum is provided:AA'DE.  Chemical Formula 1 In Chemical Formula 1, A is a first metal including Rb, Cs, or a combination thereof, A′ is an organic substance derived from an ammonium salt, an organic material derived from an organic ligand, or an organic material including a combination thereof, D is a second metal including Sb, Bi, or a combination thereof E is Cl, Br, I, or a combination thereof, 1<x≤3, −1<α<1, 3+α−x>0, −1<β<1, and −1<γ<1.

Semiconductor nanocrystal particle and production methods thereof

A quantum dot, a quantum dot-polymer composite, and an electronic device including the same. The quantum dot includes a core including a first semiconductor nanocrystal; a first shell including a second semiconductor nanocrystal including a Group III-VI compound on the core; and a second shell including a third semiconductor nanocrystal having a composition different from that of the second semiconductor nanocrystal on the first shell; wherein one of the first semiconductor nanocrystal and the third semiconductor nanocrystal includes a Group III-V compound.

Quantum dots, quantum dot-polymer composite, and electronic device including the same

An electroluminescent display device includes first and second electrode facing each other; and a quantum dot emission layer disposed between the first and second electrodes, wherein the quantum dot emission layer includes a red emission layer disposed in a red pixel, a green emission layer disposed in a green pixel, and a blue emission layer disposed in a blue pixel, wherein the red emission layer includes red light emitting quantum dots, the green emission layer includes green light emitting quantum dots, the blue emission layer includes blue light emitting quantum dots, and wherein the blue emission layer is configured to exhibit first emission spectrum including a blue luminescent peak and a first luminescent peak different from the blue luminescent peak, wherein the green emission layer is configured to exhibit a second emission spectrum including a green luminescent peak and a second luminescent peak different from the green luminescent peak.

Electroluminescent display device including a red pixel, a green pixel, and a blue pixel

A quantum dot including a core and a shell disposed on an outer surface of the core. The core includes a first semiconductor nanocrystal including a Group II-VI compound. The shell includes a second semiconductor nanocrystal. An effective mass of the second semiconductor nanocrystal is about 0.5 times to about 2.0 times an effective mass of the first semiconductor nanocrystal and the quantum dot does not include cadmium, lead, mercury, or a combination thereof.

Quantum dots, and electronic devices and electronic equipments including same

An electroluminescent display device and a light emitting device including a blue light emitting layer include a first electrode, a second electrode, and a light emitting layer between the first electrode and the second electrode. The light emitting layer includes a blue light emitting layer including a plurality of nanostructures, the plurality of nanostructures does not include cadmium. On an application of a bias voltage, the blue light emitting layer is configured to emit light of an emission peak wavelength (λ) in a range of greater than or equal to about 445 nm and less than or equal to about 480 nm. During a bias voltage change from a first voltage to a second voltage, the second voltage being greater than the first voltage by at least about 5 volts, the emission peak wavelength (λ) of the blue light emitting layer may exhibit a first emission peak wavelength (a 1λwavelength) that is less than an emission peak wavelength at the first voltage (λ@first voltage) and an emission peak wavelength at the second voltage (λ@second voltage), and during the bias voltage change, a change width in emission peak wavelength (λ) is less than or equal to about 4 nm.

Display device and light emitting device

A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.

Quantum dots and devices including the same

A cadmium free quantum dot including a core including a first semiconductor nanocrystal, and a semiconductor nanocrystal shell disposed on the core, a composition of the semiconductor nanocrystal shell being different from a composition of the first semiconductor nanocrystal, a production method thereof, and a device including the same are disclosed. The semiconductor nanocrystal shell includes a zinc chalcogenide, the zinc chalcogenide includes selenium, tellurium, sulfur, or a combination thereof, and the quantum dot further alkaline an alkaline earth metal.

A quantum dot comprising a core comprising a first semiconductor nanocrystal comprising zinc, selenium, and optionally tellurium; and a shell disposed on the core and comprising a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, and comprising zinc and at least one of sulfur and selenium, wherein the shell comprises at least three branches extending from the core, wherein at least one of the branches has a length of greater than or equal to about 2 nm, the quantum dot emits blue light comprising a maximum emission peak at a wavelength of less than or equal to about 470 nm, a full width at half maximum (FWHM) of the maximum emission peak is less than about 35 nm, and the quantum dot does not comprise cadmium.

Semiconductor nanocrystal particles and devices including the same

A light emitting device and a production method thereof. The light emitting device includes a light emitting layer including a plurality of quantum dots, and an electron auxiliary layer disposed on the light emitting layer, the electron auxiliary layer configured to transport electrons, inject electrons into the light emitting layer, or a combination thereof, wherein the electron auxiliary layer includes a plurality of metal oxide nanoparticles and a nitrogen-containing metal complex. The metal oxide nanoparticles include zinc and optionally a dopant metal, the dopant metal includes Mg, Co, Ga, Ca, Zr, W, Li, Ti, Y, Al, Co, or a combination thereof and a mole ratio of nitrogen to zinc in the electron auxiliary layer is greater than or equal to about 0.001:1.

Light emitting device, production method thereof, and display device including the same

A nanocrystal particle including at least one semiconductor material and at least one halogen element, the nanocrystal particle including: a core comprising a first semiconductor nanocrystal; and a shell surrounding the core and comprising a crystalline or amorphous material, wherein the halogen element is present as being doped therein or as a metal halide.

Nanocrystal particles and processes for synthesizing the same

Light emitting device, method of manufacturing the light emitting device, and display device including the light emitting device are disclosed. The light emitting device includes a first electrode and a second electrode each having a surface opposite the other, a light emitting layer including quantum dots that is disposed between the first electrode and the second electrode, and an electron auxiliary layer disposed between the light emitting layer and the second electrode, wherein the electron auxiliary layer includes metal oxide nanoparticles including an anion of an organic acid bound to a surface of the metal oxide nanoparticle.

Light emitting device with electron auxiliary layer including metal oxide nanoparticles, and method of manufacturing the light emitting device, and display device

A cadmium free quantum dot includes zinc, tellurium, and selenium, and lithium. A full width at half maximum of a maximum luminescent peak of the cadmium free quantum dot is less than or equal to about 50 nanometers and the cadmium free quantum dot has a quantum efficiency of greater than 1%.

Cadmium free quantum dot including lithium, production method thereof, and electronic device including the same

A quantum dot having a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium, and a semiconductor nanocrystal shell disposed on the surface of the core, the shell including zinc, selenium, and sulfur. The quantum dot is configured to emit green light, the quantum dot does not include cadmium, and the quantum dot has a mole ratio Te:Se of tellurium relative to selenium of greater than about 0.05 and less than or equal to about 0.5:1. A method of producing the quantum dot and an electronic device including the same.

Core shell quantum dot and electronic device including the same

Growing community of inventors

Suwon-si, South Korea

Eun Joo Jang