Samsung Electronics Co., Ltd.

Samsung Sdi Co., Inc.

Samsung Display Co., Ltd.

University of Pennsylvania

University of Toronto

Bilkent University

Other

University of California

Seoul National University

Samsung Electro-mechanics Co., Ltd.

The University of Chicago

Postech Research and Business Development Foundation

Davy Process Technology Limited

Eun Joo Jang

Shin Ae Jun

Hyo Sook Jang

Tae Hyung Kim

Yuho Won

Dae Young Chung

Hyun A Kang

Oul Cho

Sung Woo Kim

Jeong Hee Lee

Jihyun Min

Soo Kyung Kwon

Tae Ho Kim

Kwanghee Kim

Moon Gyu Han

Yong Wook Kim

Kun Su Park

Jin A Kim

Yongwook Kim

Shang Hyeun Park

Hongkyu Seo

Won Sik Yoon

Seong Jae Choi

Yong Seok Han

Garam Park

Tae Gon Kim

Tae Kyung Ahn

Nayoun Won

Ha Il Kwon

Seon-Yeong Kim

Chan Su Kim

Sungwoo Hwang

Heejae Lee

Jung Eun Lim

Ji-Yeong Kim

Taekhoon Kim

Jaejun Chang

Sujin Park

Jong Jin Park

Jooyeon Ahn

Hyeyeon Yang

Sung Hun Lee

Sang Jin Lee

Yong Wan Jin

Deukseok Chung

Hyung Kun Kim

Young Hwan Kim

Sung Ho Lee

Hojeong Paek

Tae Won Jeong

Chul Ho Jung

Cherie Renee Kagan

Takahiro Fujiyama

Hyunki Kim

Fumiaki Kato

Masashi Tsuji

In Taek Han

Ankit Jain

Yun Sung Woo

Sjoerd Hoogland

Taek Hoon Kim

Yusaku Konishi

Sang Heon Lee

Edward Hartley Sargent

Christopher Bruce Murray

Hyunsuk Kim

Jonggi Kim

Jun-Mo Yoo

Jaeyong Lee

Tomoyuki Kikuchi

Jae Young Choi

Christopher J Murray

Armand Paul Alivisatos

Jung Woo Lee

Sang Wook Kim

In-Taek Han

Jeongmin Kim

Larissa Levina

Jinyoung Hwang

In Sun Jung

Dae-hee Lee

Sangsig Kim

Takao Motoyama

Yukika Yamada

Jin Heong Yim

Hilmi Volkan Demir

Tae-ho Kim

Norihito Ishii

Sang Sig Kim

Chul Hee Yoo

Kyoung Ah Cho

Hyun Bum Kang

Dmitri V Talapin

Seong Jin Choi

Hyun Suk Kim

Naotoshi Suganuma

Hiroko Endo

A quantum dot light-emitting device including first electrode and a second electrode, a quantum dot layer between the first electrode and the second electrode, a first electron transport layer and a second electron layer disposed between the quantum dot layer and the second electrode. The second electron transport layer is disposed between the quantum dot layer and the first electron transport layer, wherein each of the first electron transport layer and the second electron transport layer includes an inorganic material. A lowest unoccupied molecular orbital energy level of the second electron transport layer is shallower than a lowest unoccupied molecular orbital energy level of the first electron transport layer, and a lowest unoccupied molecular orbital energy level of the quantum dot layer is shallower than a lowest unoccupied molecular orbital energy level of the second electron transport layer. An electronic device including the quantum dot light-emitting device.

Quantum dot light-emitting device and electronic device

A light emitting device including a first electrode and a second electrode facing each other, a quantum dot emission film disposed between the first electrode and the second electrode, and a charge auxiliary layer disposed between the emission film and the first electrode, between the emission film and the second electrode, or between the emission film and the first electrode and between the emission film and the second electrode, wherein the quantum dot emission film includes a first surface facing the charge auxiliary layer and an opposite second surface. A manufacturing method of making the light emitting device, and a display device including the same.

Light emitting device and display device including the same

A quantum dot includes: a core including a first semiconductor nanocrystal, and a shell disposed on the core, the shell including a second semiconductor nanocrystal and a dopant, wherein the first semiconductor nanocrystal includes a Group III-V compound, the second semiconductor nanocrystal includes zinc (Zn), sulfur (S), and selenium, and the dopant includes lithium, a Group 2A metal having an effective ionic radius less than an effective ionic radius of Zn, a Group 3A element having an effective ionic radius less than an effective ionic radius of Zn, or a combination thereof. Also a method of producing the quantum dot, and a composite, and an electronic device including the quantum dot.

Quantum dots and devices including the same

A display panel includes a light emitting panel and a color conversion panel. The color conversion layer emits a predetermined light. A color of the predetermined light comprises a first region of Cx of about 0.26 to about 0.35 and Cy of about 0.27 to about 0.35 in CIE 1931 color coordinates, and in an emission spectrum of the predetermined light having a color in the first region, a first area percentage is less than or equal to about 65%, where the first area percentage is defined by the following formula: [A/B]×100%, in which A denotes an area of a region having a wavelength of less than or equal to about 470 nm in the emission spectrum, and B denotes an area of a region having a wavelength of less than or equal to about 480 nm in the emission spectrum.

Display panel, production method thereof, and display device including the same

A quantum dot ink composition including a plurality of quantum dots, and a mixed solvent including a Solvent a and a Solvent b, the ink composition having a surface tension of about 30 mN/m to about 40 mN/m, where Solvent a is a cycloalkane compound with at least one ring carbon having a linear C4 to C16 alkyl group, and Solvent b is an aromatic hydrocarbon compound having a linear C2 to C12 alkyl group. A quantum dot electroluminescent device including a light emitting layer formed from the quantum dot composition.

Quantum dot ink composition, and quantum dot electroluminescent device

A display panel, including a light emitting panel including at least first and second light emitting units; and a color conversion panel including a surface opposite a surface of the light emitting panel and a color conversion layer including a first and second color conversion region and a partition wall defining the first and second color conversion region, wherein the first and second light emitting units are configured to provide the first color conversion region and the second color conversion region, respectively, with high energy incident light, wherein the first color conversion region includes a first semiconductor nanoparticle-polymer composite including a first polymer matrix including a polymer including a unit having a carboxyl group or an anion form of a carboxyl group, and further including, dispersed in the polymer matrix, first semiconductor nanoparticles an additional metal substance including a group IIB metal, a group IIIA metal, or a combination thereof.

Display panel and electronic device including the same

A method of manufacturing a light emitting device that includes providing a first electrode, forming a light emitting layer including quantum dots on the first electrode, forming an electron auxiliary layer on the light emitting layer, and forming a second electrode on the electronic auxiliary layer. The forming of the electron auxiliary layer includes forming an electron auxiliary layer including a plurality of metal oxide nanoparticles, and contacting the plurality of metal oxide nanoparticles with a base including a hydroxyl group (OH).

Light emitting device, method for manufacturing the same, and electronic device including the same

An electroluminescent device including an anode; a cathode; a light emitting layer disposed between the anode and the cathode; and an electron transport layer disposed between the light emitting layer and the cathode, wherein the light emitting layer includes a plurality of semiconductor nanoparticles, the electron transport layer includes zinc oxide nanoparticles including a Group IIA metal and an acid salt of an alkali metal that has an oxycarbonyl moiety, and the zinc oxide nanoparticles have an average size of less than or equal to about 20 nanometers (nm).

Electroluminescent device, production method thereof, and display device including the same

A semiconductor nanocrystal particle represented by Chemical Formula 1 and having a full width at half maximum (FWHM) of less than or equal to about 30 nanometers (nm) in the emission wavelength spectrum is provided:AA'DE.  Chemical Formula 1 In Chemical Formula 1, A is a first metal including Rb, Cs, or a combination thereof, A′ is an organic substance derived from an ammonium salt, an organic material derived from an organic ligand, or an organic material including a combination thereof, D is a second metal including Sb, Bi, or a combination thereof E is Cl, Br, I, or a combination thereof, 1<x≤3, −1<α<1, 3+α−x>0, −1<β<1, and −1<γ<1.

Semiconductor nanocrystal particle and production methods thereof

A quantum dot, a quantum dot-polymer composite, and an electronic device including the same. The quantum dot includes a core including a first semiconductor nanocrystal; a first shell including a second semiconductor nanocrystal including a Group III-VI compound on the core; and a second shell including a third semiconductor nanocrystal having a composition different from that of the second semiconductor nanocrystal on the first shell; wherein one of the first semiconductor nanocrystal and the third semiconductor nanocrystal includes a Group III-V compound.

Quantum dots, quantum dot-polymer composite, and electronic device including the same

An electroluminescent display device includes first and second electrode facing each other; and a quantum dot emission layer disposed between the first and second electrodes, wherein the quantum dot emission layer includes a red emission layer disposed in a red pixel, a green emission layer disposed in a green pixel, and a blue emission layer disposed in a blue pixel, wherein the red emission layer includes red light emitting quantum dots, the green emission layer includes green light emitting quantum dots, the blue emission layer includes blue light emitting quantum dots, and wherein the blue emission layer is configured to exhibit first emission spectrum including a blue luminescent peak and a first luminescent peak different from the blue luminescent peak, wherein the green emission layer is configured to exhibit a second emission spectrum including a green luminescent peak and a second luminescent peak different from the green luminescent peak.

Electroluminescent display device including a red pixel, a green pixel, and a blue pixel

A quantum dot including a core and a shell disposed on an outer surface of the core. The core includes a first semiconductor nanocrystal including a Group II-VI compound. The shell includes a second semiconductor nanocrystal. An effective mass of the second semiconductor nanocrystal is about 0.5 times to about 2.0 times an effective mass of the first semiconductor nanocrystal and the quantum dot does not include cadmium, lead, mercury, or a combination thereof.

Quantum dots, and electronic devices and electronic equipments including same

An electroluminescent display device and a light emitting device including a blue light emitting layer include a first electrode, a second electrode, and a light emitting layer between the first electrode and the second electrode. The light emitting layer includes a blue light emitting layer including a plurality of nanostructures, the plurality of nanostructures does not include cadmium. On an application of a bias voltage, the blue light emitting layer is configured to emit light of an emission peak wavelength (λ) in a range of greater than or equal to about 445 nm and less than or equal to about 480 nm. During a bias voltage change from a first voltage to a second voltage, the second voltage being greater than the first voltage by at least about 5 volts, the emission peak wavelength (λ) of the blue light emitting layer may exhibit a first emission peak wavelength (a 1λwavelength) that is less than an emission peak wavelength at the first voltage (λ@first voltage) and an emission peak wavelength at the second voltage (λ@second voltage), and during the bias voltage change, a change width in emission peak wavelength (λ) is less than or equal to about 4 nm.

Display device and light emitting device

A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.

A cadmium free quantum dot including a core including a first semiconductor nanocrystal, and a semiconductor nanocrystal shell disposed on the core, a composition of the semiconductor nanocrystal shell being different from a composition of the first semiconductor nanocrystal, a production method thereof, and a device including the same are disclosed. The semiconductor nanocrystal shell includes a zinc chalcogenide, the zinc chalcogenide includes selenium, tellurium, sulfur, or a combination thereof, and the quantum dot further alkaline an alkaline earth metal.

Growing community of inventors

Suwon-si, South Korea

Eun Joo Jang