Skhynix Inc.

Eun Ji Choi

Yo Han Jeong

Kwan Su Shon

Dong Hyun Kim

Jin Ha Hwang

Sung Hwa Ok

Keun Seon Ahn

Tae Jin Hwang

Soon Young Kang

Soon Sung An

In Seok Kong

Jun Seo Jang

Gwan Woo Kim

Dae Han Kwon

Hyun Bae Lee

Jae Young Park

Sun Ki Cho

Kang Woo Park

Bon Kwang Koo

Jaehyeong Hong

Doo Bock Lee

Dong Wook Jang

Jae Hyeong Hong

Junseo Jang

Heon Ki Kim

Ja Yoon Goo

Woo Jin Kang

Jung Hyun Shin

Soon Ku Kang

Jae Heung Kim

Beom Kyu Seo

Daeho Yang

Jung Yeop Lee

Ji Young Lee

A receiver circuit includes an input unit configured to receive a reception pattern signal in a training mode, and a reception normal signal in a normal mode, an enable control unit configured to determine whether to activate an enable signal according to the reception pattern signal in the training mode, a first decision feedback equalizer configured to operate in an activation period of the enable signal, and to remove a first post-cursor component for the reception normal signal by calibrating a currently received value based on a previously received value of the reception normal signal, and a second decision feedback equalizer configured to, when the enable signal is in an activated state, remove second to Npost-cursor components for the reception normal signal by adjusting driving abilities of input transistors, to which the currently received value is applied, according to patterns of the reception normal signal.

Receiver circuit and operation method for the same

A voltage generation circuit includes a voltage generation unit configured to generate a reference voltage using a power supply voltage and output the reference voltage through a voltage output node. The voltage generation circuit also includes a pre-charge unit configured to drive the voltage output node using the power supply voltage in response to a pre-charge control signal. The voltage generation circuit further includes a pre-charge control unit configured to generate at least one sampling voltage using the power supply voltage and generate the pre-charge control signal according to a result obtained by comparing the at least one sampling voltage with the reference voltage.

Pre-charge control circuit and voltage generation circuit including the same

An impedance calibration circuit includes a first leg set having an impedance calibrated to a first target impedance according to an impedance control code during an activation period of a first timing control signal, a second leg set having an impedance calibrated to a second target impedance according to the impedance control code during an activation period of a second timing control signal, a code generation circuit configured to calibrate and output a value of the impedance control code according to a result of comparing a voltage of a node, to which the first leg set is connected, with a reference voltage, and a timing control signal generation circuit configured to generate the first timing control signal and the second timing control signal having different activation periods in response to an impedance calibration enable signal.

Impedance calibration circuit and semiconductor apparatus including the impedance calibration circuit

The present technology may include a first detection unit configured to generate an output signal by detecting a level of an input terminal in response to a transition of a control clock signal during a normal read operation, and a second detection unit configured to generate the output signal by detecting the level of the input terminal regardless of the transition of the control clock signal during a state information read operation.

Latch circuit, transmission circuit including latch circuit, and semiconductor apparatus including transmission circuit

The present disclosure relates to a memory device for correcting a pulse duty ratio and a memory system including the same, and relates to a memory device which corrects the duty ratio of a primary pulse of a memory device control signal, and a memory system including the same.

Memory device for correcting pulse duty and memory system including the same

The present technology may include: a first logic gate coupled to an internal voltage terminal and configured to receive data and invert and output the data according to a first enable signal; and a second logic gate coupled to the internal voltage terminal and configured to invert an output of the first logic gate and to output an inverted output as a first buffer signal according to the first enable signal, and configured to compensate for a duty skew of the first buffer signal according to a level of an external voltage.

Buffer circuit, receiver circuit including the buffer circuit, and semiconductor apparatus including the receiver circuit

A semiconductor apparatus includes a memory controller and data storage configured to input and output data in synchronization with a clock signal provided from the memory controller. The data storage includes a memory cell array and a data output apparatus configure to output read data from the memory cell array by sensing a logic level of the read data during a low-level period of a first clock, which is an inverted signal of a divided clock of the clock signal, and a low-level period of a second clock, the second clock having a set to phase delay amount from the divided clock.

Data output apparatus and semiconductor apparatus including the data output apparatus

The present technology includes a data strobe clock output circuit. The data strobe clock output circuit includes a first output circuit configured to generate a rising clock and a falling clock in response to a clock and a first enable signal and output a first data strobe clock in response to the rising clock, the falling clock, and mode signals, and a second output circuit configured to generate a rising inverted clock and a falling inverted clock by inverting the rising clock and the falling clock generated by the first output circuit, and output a second data strobe clock in response to the rising inverted clock, the falling inverted clock, a second enable signal, and the mode signals.

Data strobe clock output circuit

A data driving circuit may include a trigger circuit and a pre-driver. The trigger circuit may be configured to block a remaining signal path among a plurality of signal paths for transmitting data except for a signal path corresponding to a currently selected driving strength. The pre-driver may be configured to drive data, which are transmitted through the signal path corresponding to the currently selected driving strength, using an impedance determined in accordance with a plurality of impedance control codes.

Data driving circuit

An impedance calibration circuit may include: a first driver having an impedance calibrated according to a first impedance control code, and configured to drive an output terminal according to first data; a second driver having an impedance calibrated according to a second impedance control code, and configured to drive the output terminal according to second data; and an impedance calibration circuit configured to calibrate the first impedance control code to a first target value set to a resistance value of an external resistor, and calibrate the second impedance control code to a second target value different from the resistance value of the external resistor.

Impedance calibration circuit and semiconductor apparatus including the same

Provided is a calibration circuit and operating method of the calibration circuit. A calibration circuit includes a first resistor code output circuit and a second resistor code output circuit. The first resistor code output circuit is coupled to an external resistor through an input/output pad, performs a first calibration operation, based on a first resistor value, such that a target voltage applied to a first reference node coupled to the input/output pad has a set voltage level, and outputs a first resistor code as a result obtained by performing the first calibration operation. The second resistor code output circuit receives the target voltage, sets an internal resistor value, based on the first resistor code, performs a second calibration operation, based on a second resistor value different from the first resistor value, and outputs a second resistor code as a result obtained by performing the second calibration operation. The first resistor value is a resistor value of the first resistor.

Calibration circuit and operating method of the calibration circuit

An input/output circuit includes a data buffer group configured to buffer data received through data lines, a data strobe buffer configured to buffer a data strobe signal to output a buffered data strobe clock, a digitally controlled delay line configured to output delay data by controlling skew of the buffered data according to a delay code, a data strobe clock output circuit configured to generate a delay data strobe clock in response to the buffered data strobe clock, a sampler configured to sample the delay data according to the delay data strobe clock to output sampled data, and a de-skew circuit configured to update the delay code according to the sampled data.

Input/output circuit and memory device having the same

A buffer circuit includes a first buffer configured to operate at an external power voltage, generate first and second buffer signals by comparing an input signal with a reference voltage, and control potential levels of the first and second buffer signals in response to a common mode feedback voltage; a second buffer configured to operate at an internal power voltage and generate an output signal in response to the first and second buffer signals; and a replica circuit configured to generate the common mode feedback voltage to be less than the internal power voltage.

Buffer circuit to adjust signal voltage and memory device having the same

An amplifier may include a differential pair circuit configured to generate an output signal according to a first input signal and a second input signal, a plurality of current sinks coupled between a ground terminal and the differential pair circuit, and a feedback circuit configured to sense a level of the output signal and generate a feedback signal. At least one of the plurality of current sinks is controlled according to the feedback signal.

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Icheon-si, South Korea

Eun Ji Choi