Hynix Semiconductor Inc.

Skhynix Inc.

Eun Jeong Kim

Sang Tae Ahn

Ja Chun Ku

Hyeon Ju An

Chan Bae Kim

Sung Kyu Min

Hyo Seok Lee

Chai O Chung

Wan Soo Kim

Yun Hyuck Ji

Seung Mi Lee

Ji Won Choi

Jong Kook Park

Beom Ho Mun

Kyoung Tak Kim

A semiconductor device includes: a semiconductor device, comprising: a bit line structure including a bit line contact plug, a bit line, and a bit line hard mask that are sequentially stacked over a substrate; a storage node contact plug that is spaced apart from the bit line structure; a conformal spacer that is positioned between the bit line and the storage node contact plug and includes a low-k material; and a seed liner that is positioned between the conformal spacer and the bit line and thinner than the conformal spacer.

Semiconductor device with low-k spacer

A method for manufacturing a semiconductor device that can prevent the loss of an isolation structure and that can also stably form epi-silicon layers is described. The method for manufacturing a semiconductor device includes defining trenches in a semiconductor substrate having active regions and isolation regions. The trenches are partially filled with a first insulation layer. An etch protection layer is formed on the surfaces of the trenches that are filled with the first insulation layer. A second insulation layer is filled in the trenches formed with the etch protection layer to form an isolation structure in the isolation regions of the semiconductor substrate. Finally, portions of the active regions of the semiconductor substrate are recessed such that the isolation structure has a height higher than the active regions of the semiconductor substrate.

Method for manufacturing a semiconductor device capable of preventing the decrease of the width of an active region

A reactive cyclodextrin derivative or a reactive glucose derivative is used as a template derivative for forming an ultra-low dielectric layer. A layer is formed of the reactive cyclodextrin derivative or the reactive glucose derivative capped with Si&#x2014;H and then cured in an atmosphere of hydrogen peroxide to form the ultra-low dielectric layer.

Template derivative for forming ultra-low dielectric layer and method of forming ultra-low dielectric layer using the same

A method for forming a device isolation structure of a semiconductor device using at least three annealing steps to anneal a flowable insulation layer is presented. The method includes the steps of forming a hard mask pattern on a semiconductor substrate having active regions exposing a device isolation region of the semiconductor substrate; etching the device isolation region of the semiconductor substrate exposed through the hard mask pattern, and therein forming a trench; forming a flowable insulation layer to fill a trench; first annealing the flowable insulation layer at least three times; second annealing the first annealed flowable insulation layer; removing the second annealed flowable insulation layer until the hard mask pattern is exposed; and removing the exposed hard mask pattern.

Method for forming device isolation structure of semiconductor device using annealing steps to anneal flowable insulation layer

Growing community of inventors

Gyeonggi-do, South Korea

Eun Jeong Kim