Hansol Chemical Co., Ltd.

Eun-Jeong Cho

Jung-Woo Park

Jang-Hyeon Seok

Hyo-Suk Kim

Ki-Yeung Mun

Hyun-Kee Kim

Cheol-Wan Park

Ee-Seul Shin

The present disclosure relates to a novel Group 4 metal element-containing compound having excellent thermal stability, a precursor composition including the compound, and a method for manufacturing a thin film using the precursor composition. The novel Group 4 metal element-containing compound according to the present disclosure and the vapor deposition precursor composition including the compound can have excellent thermal stability, realize thin film deposition in a wide temperature range, and reduce residues caused by heat loss, thereby preventing side reactions in a process. Additionally, the vapor deposition precursor composition according to the present disclosure can realize uniform thin film deposition, thereby securing excellent physical properties of the thin film.

Group 4 metal element-containing compound, precursor composition including same, and method for manufacturing thin film using same

The present invention relates to a compound that is capable of being used in thin-film deposition using vapor deposition. Particularly, the present invention relates to a rare earth compound, which is capable of being applied to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and which has excellent thermal stability and reactivity, a rare earth precursor including the same, a method of manufacturing the same, and a method of forming a thin film using the same.

Rare earth precursor, method of manufacturing same and method of forming thin film using same

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Gwangju, South Korea

Eun-Jeong Cho