Samsung Display Co., Ltd.

Eun Hyun Kim

Jun Hyung Lim

Yeon Hong Kim

Eun Hye Ko

Sun Hee Lee

Kyoung Won Lee

Kyoung Seok Son

Jaybum Kim

SunHee Lee

A thin-film transistor includes a light-shielding layer disposed on a substrate, an oxygen supply layer disposed on the light-shielding layer and including a metal oxide, a buffer layer disposed on the substrate and covering the oxygen supply layer, an active layer disposed on the buffer layer, where the active layer includes a channel area overlapping the light-shielding layer, and a first electrode area and a second electrode area respectively in contact with opposing sides of the channel area, a gate insulating layer disposed on the channel area of the active layer.

Thin-film transistor, thin-film transistor array substrate, and method for manufacturing thin-film transistor

A display device includes a display area and a functional area defining a through-portion therein. At least a portion of the functional area is surrounded by the display area. The display device includes an insulation layer disposed on a base substrate and defining a disconnection portion in the functional area, a pixel array disposed on the base substrate in the display area, and a mask pattern including a metal oxide and extending along the disconnection portion in a plan view.

Display device

A display device according to an embodiment includes: a first metal layer disposed on a substrate; a first insulating layer disposed on the first metal layer; a first transistor disposed on the first insulating layer and including a semiconductor layer; and a light-emitting device electrically connected to the first transistor, wherein the first metal layer includes a first portion with a first thickness and a second portion with a second thickness, the second thickness is greater than the first thickness, and the semiconductor layer is electrically connected to the first metal layer.

A display device includes a substrate, a corrosion prevention layer on the substrate and including an inorganic material, a first conductive layer on the corrosion prevention layer and including aluminum or an aluminum alloy, a first insulating film on the first conductive layer, a semiconductor layer on the first insulating film and including a channel region of a transistor, a second insulating film on the semiconductor layer, and a second conductive layer on the second insulating film and including a barrier layer, which includes titanium, and a main conductive layer, which includes aluminum or an aluminum alloy, wherein the semiconductor layer includes an oxide semiconductor, and the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor.

A thin film transistor array panel includes: a substrate; gate lines on the substrate, each of the gate lines including a gate electrode; a semiconductor layer on the substrate; an etching stopper on the semiconductor layer; a data wiring layer on the substrate and including a data line, a source electrode connected to the data line, and a drain electrode; and a passivation layer covering the source electrode, the drain electrode, and the etching stopper, where the etching stopper includes an etching prevention portion between the source electrode and the drain electrode, a shortest distance A between an upper side and a lower side of an overlap area where the etching prevention portion and the semiconductor layer overlap one another is represented by a straight line in a plane view, and a width of a channel portion of the semiconductor layer is greater than the shortest distance A.

Growing community of inventors

Suwon-si, South Korea

Eun Hyun Kim