Samsung Electronics Co., Ltd.

Eun Hye Choi

Moon Seung Yang

Jung Taek Kim

Min-Hee Choi

Seung Mo Kang

Yong Seung Kim

Seung Hun Lee

Sun Jung Kim

Hyun-jung Lee

A semiconductor device includes a fin-type pattern on a substrate, the fin-type pattern extending in a first direction and protruding from the substrate in a third direction, a first wire pattern on the fin-type pattern, the first wire pattern being spaced apart from the fin-type pattern in the third direction, and a gate electrode extending in a second direction, which is perpendicular to the first and third directions, and surrounding the first wire pattern, the gate electrode including a first portion that overlaps with the fin-type pattern in the second direction and a second portion corresponding to a remainder of the gate electrode except for the first portion.

Semiconductor device

A semiconductor substrate and a semiconductor device are provided. The semiconductor substrate includes a base substrate, a first silicon germanium layer on the base substrate and a second silicon germanium layer on the first silicon germanium layer. A germanium fraction of the second silicon germanium layer decreases in the direction away from the base substrate, and a germanium fraction of a lowermost part of the second silicon germanium layer is greater than a germanium fraction of an uppermost part of the first silicon germanium layer.

Semiconductor substrate and semiconductor device including the same

Growing community of inventors

Suwon-si, South Korea

Eun Hye Choi