Samsung Electronics Co., Ltd.

Eun-Hee Cho

Dong-Hyun Im

Ik-Soo Kim

Hyeong-Geun An

Sung-Lae Cho

Young-Lim Park

Dongho Ahn

Gyuhwan Oh

Soonoh Park

Jun-Soo Bae

Doo-Hwan Park

Seung-Eun Lee

Do-hyung Kim

Hee-Ju Shin

Myung-jin Kang

A method for operating of an electronic device is provided. The method includes detecting a palm touch on a touch screen of the electronic device while performing a first function of the electronic device, and performing a second function of the electronic device based on the detected palm touch on the touch screen of the electronic device.

Method for controlling function and electronic device thereof

A multi-level memory device includes an insulating layer having an opening therein, and a multi-level cell (MLC) formed in the opening that has a resistance level varies based on the data stored therein. The MLC is configured to have a resistance level that varies as write pulses having the same pulse height and different pulse widths are applied to the MLC.

Multi-level memory device using resistance material

A non-volatile memory device includes a plurality of word lines, a plurality of bit lines, and an array of variable resistance memory cells each electrically connected between a respective word line and a respective bit line. Each of the memory cells includes first and second resistance variable patterns electrically connected in series between first and second electrodes. A material composition of the first resistance variable pattern is different than a material composition of the second resistance variable pattern. Multi-bit data states of each memory cell are defined by a contiguous increase in size of a programmable high-resistance volume within the first and second resistance variable patterns.

Memory cells including resistance variable material patterns of different compositions

A method of forming a memory device includes forming a first interlayer insulating layer on a semiconductor substrate, forming a first electrode in the first interlayer insulating layer, the first electrode having a top surface of a rectangular shape extending in a first direction, and forming a variable resistance pattern on the first electrode, the variable resistance pattern having a bottom surface of a rectangular shape extending in a second direction crossing the first direction, the bottom surface of the variable resistance pattern contacting the first electrode, wherein the area of contact between the lower electrode and the variable resistance pattern is substantially equal to a multiplication of a minor axis length of a top surface of the first electrode and a minor axis length of a bottom surface of the variable resistance pattern.

Variable resistance memory device and methods of forming the same

A nonvolatile memory device and a method of fabricating the same are provided. The nonvolatile memory device includes a conductive pillar that extends from a substrate in a first direction, a variable resistor that surrounds the conductive pillar, a switching material layer that surrounds the variable resistor, a first conductive layer that extends in a second direction, and a first electrode that extends in a third direction and contacts the first conductive layer and the switching material layer. Not one of the first, second, and third directions is parallel to another one of the first, second, and third directions.

Nonvolatile memory device using variable resistive element

A non-volatile memory device including a phase-change material, which has a low operating voltage and low power consumption, includes a lower electrode; a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, wherein the phase-change material layer includes a phase-change material having a composition represented by InSbTeor, alternatively, with substitutions of silicon and/or tin for indium, arsenic and/or bismuth for antimony, and selenium for tellurium; and an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer.

Growing community of inventors

Seoul, South Korea

Eun-Hee Cho