Samsung Electronics Co., Ltd.

Gwangju Institute of Science and Technology

Eun Deok Sim

Sung Tae Kim

Jong Hyun Lee

Ho Young Lee

Jae Sung Hyun

Heon Ho Lee

Min Hwan Kim

Young Sun Kim

Young Min Park

Sang Jun Lee

Seung Woo Choi

Tan Sakong

Suk Ho Yoon

Jeong Wook Lee

Bum Joon Kim

Seong Ju Park

Jin Young Lim

Sung Pyo Lee

Sang Jo Kim

Jai Won Jean

Ji Heon Oh

Byoung Kyun Kim

Jong Hak Kim

A semiconductor light emitting device includes a substrate formed of a first material; and a convex portion protruding from the substrate and including: a first layer formed of the first material as that of the substrate; and a second layer formed of a second material different from the first material and disposed on the first layer. A second height of the second layer is greater than a first height of the first layer.

Semiconductor light emitting device having convex portion made with different materials

A semiconductor light emitting device may include: a first conductivity-type semiconductor layer; an active layer disposed on the first conductivity-type semiconductor layer and including a plurality of quantum barrier layers and a plurality of quantum well layers which are alternately stacked; and a second conductivity-type semiconductor layer disposed on the active layer. A quantum barrier layer closest to the second conductivity-type semiconductor layer, among the plurality of quantum barrier layers, may include a first undoped region and a first doped region disposed on the first undoped region and having a thickness greater than or equal to that of the first undoped region. Each of the first undoped region and the first doped region may include a plurality of first unit layers having different energy band gaps, and at least one hole accumulation region.

Semiconductor light emitting device

A semiconductor light emitting device includes an n-type semiconductor layer, a border layer disposed on the n-type semiconductor layer, having band gap energy decreasing in a single direction, and represented by an empirical formula AlInGaN (0&#x2266;x&#x2266;0.1, 0.01&#x2266;y&#x2266;0.1), an active layer disposed on the border layer and having a structure in which one or more InGaN layers and one or more GaN layers are alternately stacked, and a p-type semiconductor layer.

Semiconductor light emitting device, light emitting device package comprising the same, and lighting device comprising the same

A method of manufacturing a semiconductor light emitting device includes forming a light emitting structure layer including an active layer on a first substrate. A second substrate is bonded to the light emitting structure layer at a first temperature higher than room temperature. The first substrate is removed from the light emitting structure layer at a second temperature higher than room temperature. The second substrate and the light emitting structure are cooled to reach room temperature. A coefficient of thermal expansion of the second substrate is different from a coefficient of thermal expansion of the active layer.

Method of manufacturing semiconductor light emitting device

A semiconductor light emitting device is provided including a first conductivity-type semiconductor layer, an active layer including at least one quantum barrier layer made of InGaN, wherein 0&#x2266;x&#x3c;y, and at least one quantum well layer made of InGaN, wherein 0&#x3c;y&#x2266;1, disposed therein, and a second conductivity-type semiconductor layer, wherein the quantum barrier layer includes first and second graded layers disposed in order toward the first conductivity-type semiconductor layer. The first graded layer contains indium whose content increases in a direction towards the second conductivity-type semiconductor layer, and the second graded layer contains indium whose content decreased in a direction toward the second conductivity-type semiconductor layer.

Growing community of inventors

Yongin-si, South Korea

Eun Deok Sim