Samsung Electronics Co., Ltd.

Eun-Chul Seo

Doo-Hwan Park

Seongho Park

Seong Ho Park

Tae Yong Bae

Kyoungpil Park

Kyoung Pil Park

Aee Young Park

Kyungmin Chung

A semiconductor device is provided. The semiconductor device includes a first wiring and a second wiring disposed at a first metal level, a third wiring and a fourth wiring disposed at a second metal level different from the first metal level, a first via which directly connects the first wiring and the third wiring, a fifth wiring disposed at a third metal level between the first metal level and the second metal level and connected to the second wiring, and a second via which directly connects the fourth wiring and the fifth wiring.

Semiconductor device and method for fabricating thereof

A method of manufacturing a semiconductor device may include forming a hardmask layer on a substrate, forming a first mold pattern on the hardmask layer using a first photolithography process, conformally forming a spacer layer on the first mold pattern and on portions of the hardmask layer exposed by the first mold pattern, forming a first mold layer using a second photolithography process. The first mold layer may have a first opening that exposes a portion of the spacer layer. The method may include forming a spacer pattern by anisotropically etching the portion of the spacer layer exposed by the first opening until a portion of a top surface of the hardmask layer is exposed, and using the spacer pattern as an etching mask to pattern the hardmask layer.

Semiconductor device and method of manufacturing the same

Growing community of inventors

Hwaseong-si, South Korea

Eun-Chul Seo