Hynix Semiconductor Inc.

University-industry Cooperation Group of Kyung Hee University

Chung Ang University Industry Academic Cooperation

Industry-university Cooperation Foundation Sogang University

Eun Ah Lee

Sung Hyun Kim

Tong In Oh

Ho Jin Cho

Tae Woo Kim

Kyung Byung Yoon

Cheol Hwan Park

Dong Su Park

Wook Park

Tae Hyeok Lee

Su Jin Chae

Young Sook Son

Hye Jin Seo

Eun Sung Jeon

Hai Won Kim

Jun Soo Chang

Young Dae Kim

Dong-Su Park

Jinkee Hong

Yun Jo Lee

Seung Woo Nam

Cheol-Hwan Park

Da Heui Choi

Disclosed are microbeads for cell culture and a method of monitoring cell culture using the same. More particularly, each of the microbeads for cell culture according to an embodiment of the present invention include a core and a surface modification layer formed on a surface of the core. By using the method of monitoring cell culture with the microbeads for cell culture according to an embodiment of the present invention, cell culture may be carried out in highly scaled-up dimension and easily monitored.

Microbeads for cell culture and method of monitoring cell culture using the same

The present invention relates to transparent disc-shaped microparticles having polydopamine-modified surfaces and cell culture using the same. When the disc-shaped microparticles coated with polydopamine according to the present invention are used in cell culture, cell adhesive properties are improved and an inverted microscope may be employed to observe cells, which are major advantages when compared to conventional spherical microcarriers.

Transparent disc-shaped microparticles coated with polydopamine

Disclosed are stem cells having a thin multilayer structure, a method of preparing the same, and use thereof for cytotherapy. In accordance with the present invention, stem cells with a thin multilayer structure having improved stability and controlled multifunctionality are provided. A method of preparing the stem cells having the thin multilayer structure according to the present invention is very simple, and thus, the stem cells having the thin multilayer structure can be produced at low cost and high efficiency. Therefore, the stem cells having the thin multilayer structure prepared according to the present invention are very useful as a stem cell therapy agent for treating various diseases.

Stem cells having thin multilayer structure

The present invention relates to a bio-adhesive agent comprising a surface-modified hydroxyapatite and its use. More specifically, the present invention relates to a bio-adhesive agent for the adhesion between bone and bone, bone and tissue, bone and cartilage, or bone and tendon, or for the adhesion of a shield between bones or of an artificial joint, which comprises a surface-modified hydroxyapatite as an active ingredient, wherein the surface-modified hydroxyapatite is characterized in that a certain linker compound is covalently bonded to the surface of the hydroxyapatite; a method for coating the surface of a metal prosthesis using the surface-modified hydroxyapatite; and a metal prosthesis coated with the surface-modified hydroxyapatite obtained by said method.

Bio-adhesive agent comprising surface-modified hydroxyapatite and use thereof

A method for forming a capacitor in a semiconductor device is disclosed. The method includes forming a storage node electrode on a semiconductor substrate, forming a dielectric layer having a high dielectric constant on the storage node electrode, depositing a plate electrode on the dielectric layer, thereby forming by-product impurities, and removing by-product impurities remaining on the plate electrode by introducing a hydrogen (H) atom-containing gas onto the semiconductor substrate while depositing a capping layer on the plate electrode.

Method for fabricating capacitor in semiconductor device

The present invention relates to a process for preparing a porous hybrid comprising zeolite and chitosan and a porous hybrid prepared thereby, in particular, to a process for preparing a porous chitosan-linking compound-zeolite hybrid, which comprises the steps of: (a) forming a linking compound-zeolite intermediate by linking a linking compound to the surface of zeolite; and (b) preparing said chitosan-linking compound-zeolite hybrid by reacting said linking compound-zeolite intermediate with chitosan or a linking compound-chitosan, a porous hybrid prepared thereby, an adsorbent and a method for purifying water.

Process for preparing porous hybrid comprising zeolite and chitosan and porous hybrid prepared thereby

The present invention relates to a capacitor in semiconductor device and a method of manufacturing the same, wherein, owing to formation of a lower electrode and an upper electrode into a stack structure of a poly-silicon layer and an aluminum (Al) layer and formation of an alumina (AlO) film as a dielectric film, the lower electrode is formed into a stack structure of the poly-silicon layer-aluminum (Al) layer, thus increasing a surface area of electrodes due to the absence of oxidation during annealing, and preventing degeneration of the device, and use of the dielectric film including a high-dielectric constant material layer enables reduction of the dielectric film's thickness. Accordingly, the present invention is capable of increasing capacitance, is capable of reducing leakage current and improving dielectric breakdown characteristics via internal formation of an MIM capacitor, and is capable of reducing production costs by performing a continuous process via use of a single piece of equipment.

Capacitor in semiconductor device and method of manufacturing the same

A method for manufacturing a capacitor of a semiconductor element including: forming a bottom electrode of the capacitor on a semiconductor substrate; performing rapid thermal nitrification (RTN) on the upper surface of the bottom electrode; performing a thermal process on the obtained structure having the bottom electrode in a furnace under a nitride atmosphere to eliminate stress generated by the RTN; forming AlOand HfOdielectric films on the nitrified bottom electrode; and forming a plate electrode of the capacitor on the AlOand HfOdielectric films. The thermal process is performed after the RTN performed on the surface of the bottom electrode, so that stress, generated from the RTN, is alleviated, thereby allowing the capacitor to obtain a high capacitance and lowering leakage current.

Method for manufacturing capacitor of semiconductor element

A method for forming an isolation layer of a semiconductor device, which comprises the steps of: a) sequentially forming a pad oxide layer and a pad nitride layer on a silicon substrate; b) etching the pad nitride layer, the pad oxide layer, and the silicon substrate, thereby forming a trench; c) thermal-oxidizing the resultant substrate to form a sidewall oxide layer on a surface of the trench; d) nitrifying the sidewall oxide layer through the use of NHannealing; e) depositing a liner aluminum nitride layer on an entire surface of the silicon substrate inclusive of the nitrated sidewall oxide layer; f) depositing a buried oxide layer on the liner aluminum nitride layer to fill the trench; g) performing a chemical mechanical polishing process with respect to the buried oxide layer; and h) eliminating the pad nitride layer.

Method for forming isolation layer of semiconductor device

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Seoul, South Korea

Eun Ah Lee