Samsung Electronics Co., Ltd.

Eun Ae Chung

Young Sun Kim

Dong Hwan Kim

Jong Cheol Lee

Toshiro Nakanishi

Su Hwan Kim

Sung Kweon Baek

Jin Soak Kim

Kyoung Ryul Yoon

Ki Vin Im

Jae Hyun Yeo

Tae Hyun An

Gab Jin Nam

There is provided a method of manufacturing a semiconductor device including: preparing a semiconductor substrate having an active region; forming a dielectric layer for gate insulation on the active region; forming a curing layer with a material containing germanium (Ge) on the dielectric layer; heat-treating the curing layer; and removing the curing layer. The germanium-containing material may be silicon germanium (SiGe) or germanium (Ge).

Method of manufacturing semiconductor device

A dielectric layer, an MIM capacitor, a method of manufacturing the dielectric layer and a method of manufacturing the MIM capacitor. The method of manufacturing the dielectric layer includes chemically reacting a metal source with different amounts of an oxidizing agent based on the cycle of the chemical reactions in order to control leakage characteristics of the dielectric layer, the electrical characteristics of the dielectric layer, and the dielectric characteristics of the dielectric layer.

Dielectric layer, method of manufacturing the dielectric layer and method of manufacturing capacitor using the same

Growing community of inventors

Hwaseong-si, South Korea

Eun Ae Chung