Samsung Electronics Co., Ltd.

Samsung Mobile Display Co., Ltd.

Samsung Sdi Co., Inc.

Euk-che Hwang

Sung-Hun Lee

Jun-seong Kim

Sang-Yoon Lee

Sang-Yeol Kim

Myung-Kwan Ryu

Kyung-bae Park

Tae-sang Kim

Jang-yeon Kwon

Ji-sim Jung

Kyung-Seok Son

Joon-Yong Park

Chang-seung Lee

Hyeon-jin Shin

Jhun-mo Son

Jong-Jin Park

Hong-shik Shim

Sang-hoon Park

In-Seo Kee

Young-Hun Byun

Tae-Yong Noh

Young-Gu Lee

Shinichiro Tamura

Ki-deok Bae

Tae-yong Noh

In-sung Song

Junji Kido

Provided is a white organic light emitting device comprising an anode, a cathode, and an organic layer formed between the anode and the cathode, wherein the organic layer comprises one green emissive layer, one blue emissive layer, one red emissive layer, and one charge generating layer formed between any two of the foregoing green, blue and red emissive layers. The white organic light emitting device has a tandem structure providing the simplest structure for the three color light emissions of green, blue and red.

White organic light emitting device

A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near the surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.

ZnO-based thin film transistor and method of manufacturing the same

Provided are a thin film transistor for display devices and a manufacturing method of the thin film transistor. The thin film transistor for display devices includes: a flexible substrate; a gate electrode layer formed on the flexible substrate; a first insulating layer formed on the flexible substrate and the gate electrode; a source and a drain formed on the first insulating layer; an active layer formed on the first insulating layer between the source and the drain; a second insulating layer formed on the first insulating layer, the source, the drain, and the active layer; and a drain electrode that opens the second insulating layer to be connected to the drain and is formed of a CNT dispersed conductive polymer.

Thin film transistor for display device including a dispersed carbon nanotube dispersed conductive polymer and manufacturing method of the same

A pixel structure and an organic light emitting device including the pixel structure has at least one electronic material layer arranged between a lower electrode and an upper electrode. The pixel structure includes the lower electrode arranged in a desired pattern on a substrate and a bank covering the substrate on which the lower electrode is arranged, and defining an opening portion to expose at least a portion of the lower electrode. The area of the opening portion is greater than that of the exposed portion of the lower electrode. The pixel structure further includes an electronic material layer arranged in the opening portion and covering an upper surface of the lower electrode, and the upper electrode arranged on the electronic material layer.

Pixel structure and organic light emitting device including the pixel structure

Provided is an organic light-emitting device exhibiting lower driving voltages and improved lifetime characteristics and emission efficiency. The organic light-emitting device includes a cathode; an anode; and a light-emitting layer interposed between the cathode and the anode, wherein a buffer layer is disposed on at least one surface of the light-emitting layer.

Organic light-emitting device

An organic electroluminescent device includes: a substrate; a plurality of first electrodes arranged on the substrate; a plurality of banks arranged on the substrate and the first electrodes to define pixels on the first electrodes, the plurality of banks being of an inorganic material; a plurality of separators arranged in stripe shapes on the plurality of banks between the pixels, the plurality of separators being of an organic material; organic Emitting Material Layers (organic EMLs), each having a predetermined color, the organic EMLs being arranged within each of the pixels; and a plurality of second electrodes arranged on the organic EMLs, the plurality of banks, and the plurality of separators.

Organic electroluminescent device and its method of manufacture

A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near THE surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.

An organic light emitting device (OLED) and a white light emitting device are provided. The OLED includes a substrate, a mesh shaped anode formed on the substrate and designed to pass light, a cathode facing the anode, and an organic light emitting layer located between the anode and the cathode.

Organic light emitting device (OLED) and white light emitting device

Growing community of inventors

Osan-si, South Korea

Euk-che Hwang