Samsung Electronics Co., Ltd.

Samsung Corning Co., Ltd.

Euk Che Hwang

Soon Taik Hwang

Young Hun Byun

Jin Sung Kim

Chang Ho Noh

Ki Yong Song

Sung Hen Cho

Sang Yoon Lee

Jin Young Kim

Seok Mo Chang

Hae Jung Son

Ho Chul Lee

Joon Sung Ryu

Chang Hyeon Noh

Tamara Byk

Byong Ki Yun

Min Chul Chung

Min Ho O

An organometallic composition containing an organometallic compound (I) containing Ag, an organometallic compound (II) containing Au, Pd, or Ru, and an organometallic compound (III) containing Ti, Ta, Cr, Mo, Ru, Ni, Pd, Cu, Au, or Al, wherein the metal components of organometallic compounds (II) and (III), respectively, are present in an amount of 0.01&#x2dc;10 mol % based on the amount of Ag in the organometallic compound (I), and a method of forming a metal alloy pattern using the same. Silver alloy patterns can be obtained through a simplified manufacturing process, which patterns have enhanced heat resistance, adhesiveness, and chemical stability. The method may be applied to making a reflective film for LCD and metal wiring (gate, source, drain electrode) for flexible displays or flat panel displays, and further to CMP-free damascene processing and PR-free ITO film deposition.

Organometallic composition for forming a metal alloy pattern and a method of forming such a pattern using the composition

An organometallic composition containing an organometallic compound (I) containing Ag, an organometallic compound (II) containing Au, Pd, or Ru, and an organometallic compound (III) containing Ti, Ta, Cr, Mo, Ru, Ni, Pd, Cu, Au, or Al, wherein the metal components of organometallic compounds (II) and (III), respectively, are present in an amount of 0.01&#x2dc;10 mol % based on the amount of Ag in the organometallic compound (I), and a method of forming a metal alloy pattern using the same. Silver alloy patterns can be obtained through a simplified manufacturing process, which patterns have enhanced heat resistance, adhesiveness and chemical stability. The method may be applied to making a reflective film for LCD and metal wiring (gate, source, drain electrode) for flexible displays or flat panel displays, and further to CMP-free damascene processing and PR-free ITO film deposition.

Disclosed herein is a method for forming a highly conductive metal pattern which comprises forming a metal pattern on a substrate by the use of a photocatalyst and a selective electroless or electroplating process, and transferring the metal pattern to a flexible plastic substrate. According to the method, a highly conductive metal pattern can be effectively formed on a flexible plastic substrate within a short time, compared to conventional formation methods. Further disclosed is an EMI filter comprising a metal pattern formed by the method. The EMI filter not only exhibits high performances, but also is advantageous in terms of low manufacturing costs and simple manufacturing process. Accordingly, the EMI filter can be applied to a variety of flat panel display devices, including PDPs and organic ELs.

Method for forming highly conductive metal pattern on flexible substrate and EMI filter using metal pattern formed by the method

A method for forming a metal pattern with a low resistivity. The method may include the steps of: (i) coating a photocatalytic compound onto a substrate to form a photocatalytic film layer; (ii) coating a water-soluble polymeric compound onto the photocatalytic film layer to form a water-soluble polymer layer; (iii) selectively exposing the two layers to light to form a latent pattern acting as a nucleus for crystal growth; and (iv) plating the latent pattern with a metal to grow metal crystals thereon. According to the method, a multilayer wiring pattern including a low resistivity metal may be formed in a relatively simple manner at low cost, and the metals constituting the respective layers can be freely selected according to the intended application. The low resistivity metal pattern may be advantageously applied to flat panel display devices, e.g., LCDs, PDPs and ELDs.

Method of forming metal pattern having low resistivity

A composition of (i) an organometallic precursor containing a hydrazine compound coordinating with a central metal thereof and (ii) an organometallic compound of a main group metal and a method of forming metal film or pattern using this composition.

Organometallic precursor composition and method of forming metal film or pattern using the same

A novel black matrix, a method for preparing the same, and a flat display device and an electromagnetic interference filter to which the black matrix is applied. The black matrix is prepared by exposing a photoactive compound to form a latent pattern of nuclei for crystal growth and treating the latent pattern of nuclei for crystal growth with a metal salt solution to give a metal particle-deposited pattern; forming an electroless Ni-plated layer on the metal particle-deposited pattern; and forming an electroless Cu-plated layer on the electroless Ni-plated layer. Exhibiting improved black tone, which is achieved only by a selective multilayer plating process, without using expensive vacuum sputtering apparatus or a photolithographic process, the black matrix can be applied to various flat display devices. In addition, due to improved electric conductivity, the black matrix can be used in an electromagnetic interference filter, without employing an additional front surface blackening process.

Black matrix, method for the preparation thereof, flat display device and electromagnetic interference filter employing the same

A black matrix, a method for preparing the black matrix, a flat panel display and an electromagnetic interference filter using the black matrix. The black matrix may comprise a substrate, a titanium oxide layer, a Ni plating layer, and a Ni/Pd alloy layer. The method may comprise the steps of forming a titanium oxide layer, forming a metal particle-deposited pattern on the titanium oxide layer, forming a Ni electroless plating layer on the metal particle-deposited pattern, and forming a Ni/Pd alloy layer on the Ni electroless plating layer. Since the black matrix may have a high blackening density via simple selective multilayer plating without using a high-price vacuum sputtering apparatus and undergoing photolithography, unlike conventional chromium-based black matrices, it may be employed in various flat panel displays. In addition, since the black matrix may exhibit superior electrical conductivity, it may be used in electromagnetic interference filters without additional front-surface blackening.

Black matrix, method for preparing the same, and flat panel display and electromagnetic interference filter using the same

A method for manufacturing a high-transmittance optical filter for image display devices, which may include the steps of coating a photocatalytic compound on a transparent substrate to form a photocatalytic film, selectively exposing the photocatalytic film to light and growing a metal crystal thereon by plating to form a metal pattern, and selectively etching and removing the photocatalytic compound remaining on the transparent substrate using a buffered oxide etchant (BOE). According to the method, a high-transmittance, high-resolution and low-resistivity optical filter can be manufactured in a simple manner at low costs.

Method for manufacturing high-transmittance optical filter for image display devices

The object of this invention is to provide an organometallic precursor for forming a metal film or pattern and a method of forming the metal film or pattern using the same. More particularly, the present invention provides an organometallic precursor containing a hydrazine-based compound coordinated with a central metal thereof, and a method of forming a metal film or pattern using the same. Further, the present invention provides a composition containing an organometallic compound and a hydrazine-based compound, and a method of forming a metal film or pattern using the same. Additionally, the present invention is advantageous in that a pure metal film or pattern is formed using the organometallic precursor or composition through a simple procedure without limiting atmospheric conditions at a low temperature, and the film or pattern thus formed has excellent conductivity and morphology. Therefore, the film is useful in an electronic device field including flexible displays and large-sized TFT-LCD.

Organometallic precursor for forming metal film or pattern and method of forming metal film or pattern using the same

Disclosed herein are a method for forming a pattern of a one-dimensional nanostructure, and a pattern of a one-dimensional nanostructure formed by the method. The method comprises the steps of (i) coating a photocatalytic compound onto a substrate to form a photocatalytic film, and selectively exposing the photocatalytic film to light to form latent image centers for crystal growth, (ii) growing metal crystals by plating the latent pattern to form a metal pattern, and (iii) selectively growing a one-dimensional nanostructure on the metal pattern acting as a catalyst.

Method for forming pattern of one-dimensional nanostructure

A rapid and efficient process of forming a metal-containing pattern by producing, through photoreaction, a difference in solubility between exposed and unexposed areas of a thing film, and developing the film to produce a patterned film, followed by oxidation or reduction to provide a pure metal or metal oxide pattern.

Process of forming a micro-pattern of a metal or a metal oxide

An organometallic precursor for forming a metal pattern and a method of forming the metal pattern using the same, in which an electrically conductive metal pattern is formed using an organometallic precursor, through an exposing step without using a separate photosensitive resin. The exposure time required to dissociate the organic ligands from the metals of the organometallic precursor is very short making the overall patterning process very efficient.

Growing community of inventors

Gyeonggi-do, South Korea

Euk Che Hwang