Lg Electronics Inc.

Eujin Hwang

Seongmoo Cho

Taehoon Jang

Kwangchoong Kim

Junho Kim

Jaemoo Kim

Sungwook Hwang

Sanghoon Choi

Sungwoon Moon

Sangduk Yu

A physically unclonable device according to an embodiment of the present disclosure comprises: a plurality of inverters disposed on a first path to which a first signal is input; a plurality of inverters disposed on a second path to which a second signal is input; a first MOS capacitor disposed on the first path; and a second MOS capacitor disposed on the second path, wherein a first voltage is applied to a MOS capacitor located on the path corresponding to whichever of the first signal or the second signal arrives later at an output terminal of the first path or an outer terminal of the second path. Accordingly, a physically unclonable device that does not require separate error correction can be achieved.

Physically unclonable device, and signal processing device and image display device having same

A nitride semiconductor power device includes an AlGaN multilayer, which has changeable Al composition along a depositing direction, and SiNy layer, so as to minimize an increase in a leakage current and a decrease in a breakdown voltage, which are caused while fabricating a heterojunction type HFET device. A semiconductor device includes a buffer layer, an AlGaN multilayer formed on the buffer layer, a GaN channel layer formed on the AlGaN multilayer, and an AlGaN barrier layer formed on the AlGaN multilayer, wherein aluminum (Al) composition of the AlGaN multilayer changes along a direction that the AlGaN multilayer is deposited.

Nitride semiconductor device and fabricating method thereof

A semiconductor device including a first GaN layer, an AlGaN layer, a second GaN layer, a gate electrode, a source electrode, and a drain electrode sequentially stacked on a substrate, capable of improving a leakage current and a breakdown voltage characteristics generated in the gate electrode by locally forming a p type GaN layer on the AlGaN layer, and a manufacturing method thereof, and a manufacturing method thereof are provided. The semiconductor device includes: a substrate, a first GaN layer formed on the substrate, an AlGaN layer formed on the first GaN layer, a second GaN layer formed on the AlGaN layer and including a p type GaN layer, and a gate electrode formed on the second GaN layer, wherein the p type GaN layer may be in contact with a portion of the gate electrode.

Nitride semiconductor device using selective growth and manufacturing method thereof

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Seoul, South Korea

Eujin Hwang