Samsung Electronics Co., Ltd.

Seoul National University

Snu Rdb Foundation

Skhynix Inc.

Agency for Defense Development

Hexasolution Co., Ltd.

Euijoon Yoon

Seungmin Lee

Jongmyeong Kim

Jehong Oh

Jungel Ryu

Junhee Choi

Sung-Hoon Kwon

Kyungwook Hwang

Junsik Hwang

Sangmoon Lee

Sunghoon Kwon

Sungjin Kang

Sewon Oh

Kookheon Char

Wook Park

Sung Hyun Park

Jong Hak Kim

Yongjo Park

Jinsub Park

Shin-Woo Ha

Chulkyun Seok

Chiyeon Kim

Heeje Woo

Soon-Yong Kwon

Pilkyung Moon

Hyunseok Na

Jung El Ryu

A display device with improved light-emitting efficiency is disclosed. The display device includes a plurality of pixels, a light emitting device provided in each of the pixels, the light emitting device having first and second surfaces which are opposite to each other, first and second electrodes electrically and respectively connected to the first and second surfaces of the light emitting device, and a metal oxide pattern interposed between the second surface of the light emitting device and the second electrode. The metal oxide pattern includes first and second regions. The first region encloses the second region, and the second region has a contact hole exposing at least a portion of the second surface. The second electrode is coupled to the second surface through the contact hole, and the first and second regions have crystalline phases different from each other.

Display device

Disclosed are a display device and a manufacturing method thereof. The display device includes a plurality of pixels, a light emitting device provided in each of the plurality of pixels, the light emitting device having a first surface and a second surface, which are opposite to each other, a first electrode electrically connected to the first surface of the light emitting device, a second electrode electrically connected to the second surface of the light emitting device, and a metal oxide pattern interposed between the second surface of the light emitting device and the second electrode. The metal oxide pattern is provided to cover a portion of the second surface and to expose a remaining portion of the second surface. The second electrode is electrically connected to the exposed remaining portion of the second surface, and the metal oxide pattern includes single-crystalline or polycrystalline alumina.

Display device and method of manufacturing light emitting device

Provided are a micro light source array for a display device, a display device including the micro light source array, and a method of manufacturing the display device. The micro light source array includes: a plurality of silicon sub-mounts provided on a substrate, each silicon sub-mount from among the plurality of silicon sub-mounts corresponding to a respective sub-pixel from among a plurality of sub-pixels of a display device, the plurality of silicon sub-mounts being separated from each other by a plurality of trenches; a plurality of light emitting device chips coupled to the plurality of silicon sub-mounts; and a plurality of driving circuits provided at the plurality of silicon sub-mounts.

Micro light source array, display device having the same, and method of manufacturing display device

A method of aligning micro LEDs and a method of manufacturing a micro LED display using the same are provided. The method of aligning micro LEDs includes providing micro LEDs, each having a first surface that has a first maximum width and a second surface opposite to the first surface and has a second maximum width that is greater than the first maximum width, providing a transfer substrate including a transfer mold that has an array of openings, each of the openings being configured to accommodate the first surface of a corresponding micro LED and not accommodate the second surface of the corresponding micro LED and aligning the micro LEDs in one direction in the openings of the transfer mold by inserting the micro LEDs into the openings of the transfer mold so that the first surface of each of the micro LEDs is positioned within a corresponding opening.

Method of aligning micro LEDs and method of manufacturing micro LED display using the same

The present disclosure relates to a display device, and more particularly, to a display device including a plurality of pixels on a base layer and a first light-emitting element and a second light-emitting element, which are provided on a first pixel of the pixels. Here, each of the first and second light-emitting elements includes a first surface and a second surface opposite to the first surface, the first surface of the first light-emitting element faces the base layer, and the second surface of the second light-emitting element faces the base layer.

Display apparatus

Disclosed is a display apparatus comprising a plurality of pixels and a light emitting device on each of the plurality of pixels. The light emitting device includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked on a bottom surface and a sidewall of the light emitting device. The sidewall of the light emitting device includes a first facet and a second facet adjacent to the first facet. A first angle is made between the bottom surface and the first facet. A second angle is made between the bottom surface and the second facet. The first facet and the second facet meet each other to define an edge. The edge extends from the bottom surface toward a top surface of the light emitting device.

A method of forming a semiconductor thin film structure and a semiconductor thin film structure formed using the same is provided. A sacrificial layer is formed on a substrate and then patterned through various methods, an inorganic thin film is formed on the sacrificial layer and then the sacrificial layer is selectively removed to form a cavity defined by the substrate and the inorganic thin film on the substrate.

Semiconductor thin film structure and method of forming the same

A photodetector with a plasmon structure includes a semiconductor substrate, a plurality of light-receiving elements that are formed in a predetermined pattern, protruding from the semiconductor substrate, and a nanostructure that is placed in contact with a surface of the semiconductor substrate among the light-receiving elements and which induces a plasmon phenomenon thereon.

Photodetector with plasmonic structure and method for fabricating the same

A semiconductor device includes a first non-flat non-polar nitride semiconductor layer, a first structure layer on at least a portion of the surface of the first non-flat non-polar nitride semiconductor layer and a first non-polar nitride semiconductor layer on the first non-flat non-polar nitride semiconductor layer and the first structure layer. The first non-flat non-polar nitride semiconductor layer includes a plurality of solid particles.

Semiconductor devices and methods of manufacturing the same

Provided is a method of fabricating a substrate where patterns are formed, the method including: preparing a solution in which a plurality of oxide beads are dispersed; forming patterns on a substrate; installing a provisional structure in an upper portion of the substrate so that a micro-channel is formed on the substrate; injecting the solution in which the oxide beads are dispersed, into the micro-channel and fixing the oxide beads at the substrate; and thermally processing the substrate. A plurality of low-priced oxide beads can be patterned on a substrate to have a desired shape so that damages can be prevented from occurring in the substrate during dry etching, and an etching process is not performed so that a yield of a device is not reduced and mass production of the device increases.

Method of fabricating substrate where patterns are formed

Provided are a nitride thin film structure and a method of forming the same. If a nitride thin film is formed on a substrate that is not a nitride, many defects are generated by a difference in lattice constants between the substrate and the nitride thin film. Also, there is a problem of warping the substrate by a difference in thermal expansion coefficients between the substrate and the nitride thin film. In order to solve the problems, the present invention suggests a thin film structure in which after coating hollow particles, i.e. hollow structures on the substrate, the nitride thin film is grown thereon and the method of forming the thin film structure. According to the present invention, since an epitaxial lateral overgrowth (ELO) effect can be obtained by the hollow structures, high-quality nitride thin film can be formed. Since a refractive index in the thin film structure is adjusted, there is an effect of increasing light extraction efficiency during manufacturing the thin film structure into a light emitting device such as a light emitting diode (LED). Also, when thermal expansion coefficient of the substrate is greater than that of the nitride thin film, total stress of the nitride thin film is decreased according to the compression of the hollow structures in the nitride thin film such that there is also an effect of preventing warpage of the substrate.

Structure of thin nitride film and formation method thereof

Provided is a method of fabricating a substrate where patterns are formed, the method including: forming first bonding agent patterns having selective cohesion in a position in which oxide bead patterns are to be formed on a substrate; coating a second bonding agent having larger cohesion with the first bonding agent than cohesion with the substrate, on a plurality of oxide beads, applying the oxide beads, on which the second bonding agent is coated, to the substrate and forming the oxide beads, on which the second bonding agent is coated, on the first bonding agent patterns; and thermally processing the substrate.

Provided is a light emitting diode (hereinafter, referred to as an LED) coating method, and more particularly, an LED coating method that can be used to coat a phosphor, a molding, etc., on an LED. The LED coating method includes (a) preparing a substrate and a plurality of LEDs arranged on the substrate; (b) applying a photoresist onto the substrate and the plurality of LEDs; and (c) selectively exposing the photoresist to light to form a first coating on surfaces of the plurality of LEDs. Here, the first coating is formed by curing the photoresist.

Growing community of inventors

Seoul, South Korea

Euijoon Yoon