Samsung Electronics Co., Ltd.

Euido Kim

Sunil Shim

Jin-Young Kim

Joon-Sung Lim

Jang-Gn Yun

Bongyong Lee

Jin-Kyu Kang

Sang-Youl Kwon

Houng-kuk Jang

Hye Yeon Yun

Haebum Lee

An operating method of a nonvolatile memory device is provided which sequentially performs a plurality of erase loops to erase at least one of a plurality of memory blocks. The operating method comprises performing at least one of the plurality of erase loops; performing a post-program operation on the at least one memory block after the at least one erase loop is executed; and performing remaining erase loops of the plurality of erase loops. The post-program operation is not performed when each of the remaining erase loops is executed.

Methods of operating a nonvolatile memory device

Provided is a flash memory device that can include a memory cell configured to store data, a local bit line that is connected to the memory cell, a global bit line that is connected to the local bit line, a discharge transistor that is connected to the global bit line, and that is configured to selectively connect the global bit line to a reference level responsive to a discharge control signal, and a discharge control circuit, that is connected to the discharge transistor via the discharge control signal, and that is configured to selectively disable the discharge transistor during an erase interval occurring before a verify interval of an erase verification operation carried out by the flash memory device.

Flash memory devices with selective bit line discharge paths and methods of operating the same

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Euido Kim