Samsung Electronics Co., Ltd.

Euichul Jeong

Yoosang Hwang

Kiseok Lee

Jong-Ho Moon

Sangyeon Han

Seungjae Jung

Taehyun An

Sung-Hwan Jang

Hyungeun Choi

Han-sik Yoo

A semiconductor memory device may include a peripheral circuit structure including peripheral circuits integrated on a semiconductor substrate in a first region and a first keypad disposed in a second region; a stack provided on the first region of the peripheral circuit structure, the stack including a plurality of first conductive lines extending in a first direction and are vertically stacked; an upper insulating layer covering the stack; an interconnection layer provided on the upper insulating layer; a penetration plug spaced apart from the stack and is provided to penetrate the upper insulating layer to connect the interconnection layer to the peripheral circuits of the peripheral circuit structure; a molding structure provided on the second region of the peripheral circuit structure and spaced apart from the stack in the first direction; and a penetration structure provided to penetrate the molding structure and vertically overlap with the first keypad.

Semiconductor memory device

Growing community of inventors

Yongin-si, South Korea

Euichul Jeong