Samsung Electronics Co., Ltd.

Euichul Hwang

Juyoun Kim

Bongseok Suh

Sungmoon Lee

Jooho Jung

Sangmin Yoo

Hyungjoo Na

Seongho Cho

Youngsoo Park

Myoungjae Lee

A semiconductor device is provided. The semiconductor device includes a substrate including an active pattern, a gate electrode extending in a first direction and crossing the active pattern which extends in a second direction, a separation structure crossing the active pattern and extending in the first direction, a first gate dielectric pattern disposed on a side surface of the gate electrode, a second gate dielectric pattern disposed on a side surface of the separation structure, and a gate capping pattern covering a top surface of the gate electrode. A level of a top surface of the separation structure is higher than a level of a top surface of the gate capping pattern.

Semiconductor device

A cognitive sensor and a method of operating the same. The cognitive sensor includes a sensor unit, which generates electric signals in response to outside stimulations; a signal processing unit, which generates sensed data regarding the outside stimulations by processing electric signals generated by the sensor unit; a cognitive circuit unit, which specifies an area of interest in the sensed data processed by the signal processing unit; and an output unit, which outputs the sensed data generated by the signal processing unit, wherein at least a portion of the sensed data output by the output unit is sensed data regarding the area of interest.

Cognitive sensor and method of operating of the same

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Seoul, South Korea

Euichul Hwang