Goldstar, Co., Ltd.

Lg Electronics Inc.

Eui Y Oh

Jeong Hun Kim

Jeong Hyun Kim

This invention relates to a method for fabricating a thin film transistor used for LCD which can improve performance and productivity of an element by forming it with atmospheric pressure CVD method including processes for forming a gate electrode having sloped sides on an insulation substrate, forming a gate insulation film, a semiconductor layer and a channel protection layer successively with atmospheric pressure chemical vapor deposition method on all over the insulation substrate, patterning the channel protection layer such that the channel protection layer is to have a narrower pattern width than the pattern width of the gate electrode remaining the channel protection layer only on the semiconductor layer over the gate electrode, forming an impurity injected semiconductor layer for making resistive contact by injecting impurities into the semiconductor layer using the channel protection layer as a mask, and forming source and drain electrodes over the channel protection layer, the impurity injected semiconductor layer and the gate insulation film so that upper surface of the channel protection layer between them can be exposed.

Method of depositing an amorphous silicon film by APCVD

This invention relates to a method for fabricating a thin film transistor used for LCD which can improve performance and productivity of an element by forming it with atmospheric pressure CVD method including processes for forming a gate electrode having sloped sides on an insulation substrate, forming a gate insulation film a semiconductor layer and a channel protection layer successively with atmospheric pressure chemical vapor deposition method on all over the insulation substrate, patterning the channel protection layer such that the channel protection layer is to have a narrower pattern width than the pattern width of the gate electrode remaining the channel protection layer only on the semiconductor layer over the gate electrode, forming an impurity injected semiconductor layer for making resistive contact by injecting impurities into the semiconductor layer using the channel protection layer as a mask, and forming source and drain electrodes over the channel protection layer, the impurity injected semiconductor layer and the gate insulation film so that upper surface of the channel protection layer between them can be exposed.

Method for fabricating a thin film transistor using APCVD

A method for fabricating a thin film transistor, enabling an easy fabrication and an improvement in device characteristic by use of a self-alignment. The method including the steps of forming a gate electrode on an insulating transparent substrate, depositing a plurality of gate insulating films having different refractive indexes, in the order of higher refractive index, and then a semiconductor layer, an etch stopper layer and a photoresist film, in this order, subjecting the resulting structure to a back light exposure using the gate electrode as a mask and then to a development for patterning the photoresist film so that the gate electrode can be overlapped by a predetermined overlap length with each of a source electrode and a drain electrode to be formed at a subsequent step, selectively etching the etch stopper layer using the patterned photoresist film as a mask, removing the patterned photoresist film and then sequentially depositing a high concentration n type doped semiconductor layer and a metal layer over the entire exposed surface of the resulting structure, and selectively removing respective portions of the high concentration n type doped semiconductor layer and the metal layer disposed over the patterned etch stopper layer to form the source electrode and the drain electrode.

Method for fabricating thin film transistor using back light exposure

A thin film transistor and a method of making the same, capable of reducing the step height between an insulating substrate and a gate electrode upon the anodization and thus preventing a short circuit at overlapping portions of the gate electrode and source/drain electrodes. The thin film transistor comprises a first metal layer as a gate electrode formed on an insulating substrate, an anodizable second metal layer having a line width larger than that of the first metal layer so as to cover the first metal layer, and an anodized film as a first gate insulating film formed by anodizing the second metal layer. The gate electrode and the anodized film serve as a gate insulating film. The gate insulating film can be also provided by forming a metal layer with a proper thickness over the insulating substrate, primarily anodizing a portion of the metal layer, forming a gate pattern forming layer over the anodized metal layer portion, and secondarily anodizing the metal layer except for its portion disposed beneath the gate pattern forming layer, to form a gate electrode. The anodized films are used as the gate insulating film.

Growing community of inventors

Kyungki-do, South Korea

Eui Y Oh