Tong Yang Cement Corporation

Samsung Electronics Co., Ltd.

Seoul National University

Inostek Inc.

Dong Yang Cement Corporation

Eui Joon Yoon

Dong Su Lee

Hyun Jung Woo

Dong Yeon Park

Dong Il Chun

Min Hong Kim

Jo Woong Ha

Dong Hyun Lee

Seung Hyun Kim

Jin Sub Lee

Jung Sub Kim

Kyung Wook Hwang

Jeong Hwan Jang

Gun Do Lee

Jowoong Ha

In Su Shin

Tae Soon Park

A semiconductor ultraviolet light emitting device includes: a substrate; a buffer layer disposed on the substrate and comprising a plurality of nanorods between which a plurality of voids are formed; a first conductive nitride layer disposed on the buffer layer and having a first conductive AlGaN layer; an active layer disposed on the first conductive nitride layer and having a quantum well including AlInGaN (0&#x2264;x+y&#x2264;1, 0&#x2264;y&#x3c;0.15); and a second conductive nitride layer disposed on the active layer and having a second conductive AlGaN layer, in which the plurality of nanorods satisfy 3.5&#x2264;n(&#x3bb;)&#xd7;D/&#x3bb;&#x2264;5.0, where &#x3bb; represents a wavelength of light generated by the active layer, n(&#x3bb;) represents a refractive index of the plurality of nanorods at a wavelength of &#x3bb;, and D represents diameters of the plurality of nanorods.

Semiconductor ultraviolet light emitting device having improved light extraction efficiency

A method of manufacturing a metallic film consisting of giant single crystal grains is disclosed. The method includes depositing the metallic film on a substrate under an atmosphere of an inert gas and a specified additive gas to change a surface energy, grain boundary energy, or internal strain energy of the metallic film. The method also includes annealing step of the resultant of the deposition at a temperature suitable for the grain growth of the metallic film containing the additive gases. According to the method, the metallic film consisting of giant single crystal grains having a grain size whose ratio of thickness to an average grain size of the film is above 50 can be produced without depending upon the kind of substrate and deposition method.

Method of manufacturing metallic film consisting of giant single crystal grains

A platinum film orientation-controlled to (111), (200) and/or (220) is provided by depositing the platinum film under an atmosphere containing an oxygen component such as O , O , N O , N &plus;O , or mixtures thereof as well as an inert gas (Ar, Ne, Kr, or Xe) on a substrate heated to a temperature ranged from room temperature to 700&deg; C., and annealing to remove the gases introduced into the platinum film during the deposition thereof. The platinum film formed in this process has excellent electrical conductivity (resistivity is lower than 15 &mgr;&OHgr;-cm), good enough adhesion strength to be used for electronic devices, and does not show hillocks, voids or pinholes.

Apparatus and method of forming preferred orientation-controlled platinum film using oxygen

A method of depositing a (200)-oriented platinum thin film on a substrate, including the steps of forming a oxygen containing platinum layer on the surface of a silicon wafer heated to a temperature range over room temperature and not exceeding 700&deg; C. under a mixed gaseous atmosphere of oxygen and inert gas and annealing the substrate at a temperature between 400&deg; C. and 1000&deg; C. The platinum thin film formed according to the present invention in (200)-oriented and does not have any conventional defects such as hillocks or voids.

Method of forming a (200)-oriented platinum layer

A platinum film, which is used as a bottom electrode for a capacitor in a DRAM cell or a non-volatile ferroelectric memory cell, is formed in two separate processes, wherein a first thickness platinum part thereof is deposited under an inert gas atmosphere, and the second thickness platinum part is deposited under an atmosphere containing oxygen, nitrogen and/or a mixture thereof as well as an inert gas. The platinum film is annealed under a vacuum atmosphere to remove the oxygen an/or nitrogen introduced during the deposition of the second thickness platinum part. The annealed platinum film prevents formation of an oxide on a functional intermediate film such as a diffusion barrier layer or an adhesion layer, which is provided below the bottom electrode of platinum film.

Apparatus and methods of depositing a platinum film with anti-oxidizing

Platinum film orientation-controlled to (111), (200) and/or (220) are provided by depositing the platinum film under an atmosphere containing nitrogen as well as an inert gas (Ar, Ne, Kr, Xe) on a substrate heated to temperature ranged from room temperature to 500.degree. C., and then annealing to substantially remove nitrogen introduced into the platinum film during the deposition thereof. The platinum film formed in this process has an excellent electrical conductivity (resistivity is lower than 15 .mu..OMEGA.-cm), good enough adhesion strength to be used for electronic devices, and does not show hillocks, pores or pinholes.

Apparatus and methods of forming preferred orientation-controlled

The present invention relates to a method of depositing a platinum thin-film on a silicon wafer. The method includes the steps of depositing a platinum layer on an insulating oxide layer under an oxidation atmosphere to form a mixture film consisted of platinum grains, platinum oxide grains and oxygen adhered to those grains (hereinafter, 'the mixture film' to be referred as 'oxygen containing platinum thin-film'); depositing an additional platinum thin-film to a desired thickness on the oxygen containing platinum thin-film under a complete inert atmosphere; and annealing the silicon substrate at a temperature of 400 to 1,300.degree. C. in order to remove oxygen present in the independent form or in platinum oxide form within the oxygen containing platinum thin-film and to stabilize the entire platinum thin-film. The oxygen containing platinum thin-film layer serves as a glue layer during the depositing step of additional platinum thin-film layer and is converted into pure platinum condition after the annealing step, whereby the silicon substrate substantially does not have any glue layer between the platinum layer and the insulating layer of the silicon substrate.

Method for depositing a platinum layer on a silicon wafer

The present invention relates to a method of depositing a platinum thin-film on a silicon wafer. The method includes the steps of depositing a platinum layer on an insulating oxide layer under an oxidation atmosphere to form a mixture film consisted of platinum grains, platinum oxide grains and oxygen adhered to those grains (hereinafter, 'the mixture film' to be referred as 'oxygen containing platinum thin-film'); depositing an additional platinum thin-film to a desired thickness on the oxygen containing platinum thin-film under a complete inert atmosphere; and annealing the silicon substrate at a temperature of 400.degree. to 1,300.degree. C. in order to remove oxygen present in the independent form or in platinum oxide form within the oxygen containing platinum thin-film and to stablize the entire platinum thin-film. The oxygen containing platinum thin-film layer serves as a glue layer during the depositing step of additional platinum thin-film layer and is converted into pure platinum condition after the annealing step, whereby the silicon substrate substantially does not have any glue layer between the platinum layer and the insulating layer of the silicon substrate.

Growing community of inventors

Seoul, South Korea

Eui Joon Yoon