Skhynix Inc.

Samsung Electronics Co., Ltd.

Hynix Semiconductor Inc.

Eui Jin Kim

Jong Min Lee

Kwang Tai Kim

Se Hyun Kim

Hyung Sup Byeon

Joong Seob Yang

Jeong Soon Kwak

Yong Hwan Kim

Young Ho Kim

Seok Jin Joo

Hyun Ju Hong

Jung Won Kim

Kyeong Rho Kim

Yong Il Jung

Han Vit Kang

Byeong Cheol Kim

Sung Won Hong

Ho Kyung Kang

Hak Yeol Kim

Jeong Sik Jeong

Eun Sung Cho

Woo Young Oh

Jong Dae Park

Su Jin Yun

Su Cheol Cheong

An electronic device includes a first lead, a second lead, a touch sensitive display panel including a screen area and an extended area that extends from the screen area, and a control circuit. The touch sensitive display panel includes a flexible substrate, a thin film transistor (TFT) layer including a plurality of light-emitting elements, an insulation layer in which a via-hole is formed, and a touch sensor. The first lead is formed on the TFT layer in the screen area and the extended area and connects the control circuit and the plurality of light-emitting elements. The second lead is formed on the insulation layer in the screen area and on the TFT layer in the extended area, and extends from the screen area to the extended area through the via-hole formed in the insulation layer and connects the control circuit and the touch sensor.

Electronic device including flexible display panel

A data storage device includes a nonvolatile memory apparatus suitable for accessing a target region corresponding to an access command, and a processor suitable for calculating a first hash value corresponding to the target region based on a first hash function, and updating an access count that is indexed by the first hash value.

Data storage device and operating method thereof

An electronic device includes a housing that includes a first surface facing a first direction, a second surface facing a second direction that is opposite the first direction, and a transparent member forming at least part of the first surface, a display that is interposed between the first surface and the second surface of the housing and is exposed through the transparent member, and a force sensor that is interposed between the display and the second surface of the housing.

Electronic device including display equipped with force sensor

A data storage device includes a host interface unit for generating a host request based on a request received from a host device; a control unit for generating a task based on the host request; and a memory control unit for controlling a nonvolatile memory device based on the task, wherein, when it is determined that an operation of the nonvolatile memory device has failed, the memory control unit transmits a fail information regarding the failed operation to the host interface unit.

Data storage device

A data storage device includes a controller configured to update an access request count and an access count corresponding to a target region based on an access request for the target region, and initialize the access count each time the access request count reaches a first threshold, and a nonvolatile memory apparatus including the target region, and configured to access the target region based on a control of the controller.

Access counts for performing data inspection operations in data storage device

A semiconductor system includes a semiconductor memory device suitable for storing data, and a host suitable for controlling the semiconductor memory device in response to an external command signal, in which the semiconductor memory device includes a buffer block suitable for storing first data programmed under control of the host, and a main block suitable for storing the second data programmed under control of the host or a copy of the first data stored in the buffer block at a sudden power fail.

Semiconductor system and operating method thereof

A data storing system performs a test operation on a memory block on which a read operation is determined to be failed, and determines whether the memory block is or is not a bad block based on a result of the test operation. The data storing system may improve reliability and yield of a device.

Data storing system and operating method thereof

A method of operating a data storage device includes setting program verify voltages for verifying whether memory cells of a nonvolatile memory device are programmed to desired program states; transmitting the set program verify voltages to the nonvolatile memory device; generating data patterns respectively corresponding to program states based on the program verify voltages; transmitting a data pattern corresponding to the program verify voltages to the nonvolatile memory device; and programming the memory cells with the transmitted data pattern.

Provided is an operating method of a data storage device including a plurality of nonvolatile memory devices. The operating method includes the steps of: dividing storage areas of the nonvolatile memory devices into a first memory area and a second memory area; determining wear levels of each of the first memory area and the second memory area; and varying a ratio of the first memory area and the second memory area according to the determined wear levels.

Operating method of data storage device

Solid-state storage systems and methods are provided for controlling a wear leveling process for uniform use of the memory cells that replaces worn memory blocks with less frequently used memory blocks. The wear leveling process is performed by changing the physical locations of the storage cells within each memory zone or plane. Reference values of target memory block erase counts and worn memory block erase counts are used for searching target memory blocks to be used as replacements.

Growing community of inventors

Gyeonggi-do, South Korea

Eui Jin Kim