Samsung Mobile Display Co., Ltd.

Samsung Display Co., Ltd.

Samsung Sdi Co., Inc.

Lg Philips Lcd Co., Inc.

Lg.phillips Lcd Co., Ltd.

Eui-Hoon Hwang

Sang-Gul Lee

Sung-Chul Kim

Cheol-Ho Yu

Kwang-Nam Kim

Ji-Su Ahn

Deuk-Jong Kim

Ki-Jong Kim

A display device includes a substrate, an insulation layer arranged on the substrate and spaced apart from the substrate and including a plurality of stepped portions recessed from a top surface, a first line arranged on the top surface of the insulation layer and a second line comprised of a same material as the first line and being arranged in the stepped portions and having a level difference from the first line.

Display device

A method of fabricating a display device is provided. The method includes providing a substrate having a pixel region and a circuit region located at the periphery of the pixel region. A first semiconductor layer and a second semiconductor layer are formed on the pixel region and on the circuit region, respectively. The first semiconductor layer may be selectively surface treated to increase the density of lattice defects in a surface of the first semiconductor layer.

Method of fabricating display device having a pixel region and a circuit region over the same substrate

A thin film transistor (TFT), including a crystalline semiconductor pattern on a substrate, a gate insulating layer on the crystalline semiconductor pattern, the gate insulating layer having two first source/drain contact holes and a semiconductor pattern access hole therein, a gate electrode on the gate insulating layer, the gate electrode being between the two first source/drain contact holes, an interlayer insulating layer covering the gate electrode, the interlayer insulating layer having two second source/drain contact holes therein, and source and drain electrodes on the interlayer insulating layer, each of the source and drain electrodes being insulated from the gate electrode, and having a portion connected to the crystalline semiconductor pattern through the first and second source/drain contact holes.

Method of fabricating thin film transistor

Provided are an organic light emitting display device (OLED) and a method of fabricating the same. When a electrically conductive line and a gate electrode are formed at the same time or when a first electrode is formed, interconnections for electrically connecting elements are formed. Thus, the number of used masks can be reduced, so that the overall fabrication process can be shortened and the production cost can be reduced.

Organic light emitting display device and method of fabricating the same

Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same

An organic light emitting display (OLED) and a method of fabricating the same are provided. The OLED includes a substrate and a thin film transistor disposed on the substrate. A first inorganic passivation layer is disposed on the thin film transistor. A second inorganic passivation layer whose hydrogen content is higher than that of the first inorganic passivation layer is formed on the first inorganic passivation layer. A pixel electrode electrically connected to the thin film transistor is disposed on the second inorganic passivation layer.

Organic light emitting display and method of fabricating the same

A method of fabricating a TFT array substrate that prevents mobile ions from moving from a photoresist to channels of the TFT by the gate electrode of the TFT by performing photolithography processes for ion injection after forming gate electrode of TFT and, in addition, a method of fabricating a TFT array substrate that omits a photolithography process for forming a lower electrode of a storage capacitor by forming the lower electrode of the storage capacitor by a channel doping process for a PMOS TFT.

Method of fabricating thin film transistor array substrate

Methods of fabricating a TFT and an OLED using the same are provided. The method of fabricating a CMOS TFT includes: preparing a substrate having first and second TFT regions; forming a gate electrode on the substrate; forming a gate insulating layer on the entire surface of the substrate including the gate electrode; forming a semiconductor layer on a predetermined region of the gate insulating layer using a mask; exposing the back of the mask using the gate electrode; injecting n-type impurity ions into the semiconductor layers of the first and second TFT regions using the back-exposed mask and forming a channel region and source and drain regions; ashing both sides of the back-exposed mask; injecting low concentration impurity ions into the semiconductor layers of the first and second TFT regions using the ashed mask and forming an LDD region; and injecting p-type impurity ions into the semiconductor layer of the second TFT region and forming source and drain regions.

Methods of fabricating thin film transistor and organic light emitting display device using the same

A method of fabricating a Complementary Metal-Oxide Semiconductor (CMOS) Thin Film Transistor (TFT) using a reduced number of masks includes: forming a buffer layer on the entire surface of a substrate; forming polysilicon and photoresist layers on the entire surface of the substrate having the buffer layer; exposing and developing the photoresist layer to form a first photoresist pattern having a first thickness in a region where a semiconductor layer of a first TFT is to be formed, a second thickness in a region where a channel and a Lightly Doped Drain (LDD) region of a second TFT are to be formed, and a third thickness in a region where source and drain regions of the second TFT are to be formed; etching the polysilicon layer using the first photoresist pattern as a mask to pattern the semiconductor layers of the first and second TFTs; performing a first ashing process on the first photoresist pattern to form a second photoresist pattern where the region having the third thickness has been removed from the first photoresist pattern; implanting a first impurity into the source and drain regions of the second TFT using the second photoresist pattern as a mask; performing a second ashing process on the second photoresist pattern to form a third photoresist pattern where the region having the second thickness has been removed from the first photoresist pattern; and implanting a second impurity into the second TFT using the third photoresist pattern as a mask to perform channel doping on the second TFT.

Method of fabricating complementary metal-oxide semiconductor (CMOS) thin film transistor (TFT)

A method of fabricating a CMOS thin film transistor (TFT) and a CMOS TFT fabricated using the method involve provision of a substrate having a first region and a second region. A first semiconductor layer and a second semiconductor layer are formed on the first and second regions, respectively. A gate insulating layer having a first portion overlying end portions of the first semiconductor layer, and a second portion overlying end portions of the second semiconductor layer and having a thickness larger than that of the first portion, is formed on the semiconductor layers. An ion doping mask pattern is formed on the gate insulating layer. First impurities are doped in end portions of the first semiconductor layer using the ion doping mask pattern as a mask, and second impurities having a conductivity type different from that of the first impurities are doped in end portions of the second semiconductor layer. As a result, it is possible to reduce the number of masks, and to simplify the processes required for manufacture of the CMOS TFT.

Method of fabricating CMOS thin film transistor (TFT) and CMOS TFT fabricated using the same

A thin film transistor, a flat panel display device including the same, and a method of fabricating the same. An uneven structure is formed at a part of a polycrystalline silicon layer pattern corresponding to a channel region to form a channel length at the edge of the channel region longer than a main channel length, so that a resistance at the edge of the channel region increases to cause an amount of current flowing through the edge of the channel region to decrease, thereby enhancing the reliability of a circuit at low voltage driving.

Thin film transistor, flat panel display device, and method of fabricating the same

A flat panel display and method for fabricating the same are disclosed. The flat panel display includes a substrate. Signal lines are arranged on the substrate in a matrix shape, and a unit pixel region defined by crossing arrangement of the signal lines, has a pixel driving circuit region and an emission region. A pixel driving TFT positioned in the pixel driving circuit region, includes a semiconductor layer and a gate electrode corresponding to a predetermined portion of the semiconductor layer. The gate electrode is formed on a same layer as the signal lines. A pixel electrode, electrically connected to the pixel driving TFT, is positioned in the emission region.

Flat panel display

An organic light emitting device, and method of fabricating the same, in which a data line, a power line, or a data line and a power line of a unit pixel region are formed in a trench formed in an insulating layer. A first pixel electrode overlaps the trench.

Organic light emitting device and method of fabricating the same

A semiconductor doping method includes steps of forming an insulation layer on a substrate, forming a semiconductor layer on the insulation layer, forming a photoresist layer on the insulation layer, patterning the photoresist layer to provide a portion of the photoresist layer on a first portion of the semiconductor layer, hard baking the portion of the photoresist layer at a first hard-baking temperature of more than about 140&deg; C., doping the semiconductor layer with an impurity in regions other than the first portion of the semiconductor layer, and removing the portion of the photoresist layer.

Growing community of inventors

Suwon-si, South Korea

Eui-Hoon Hwang